2SC898 Search Results

2SC898

Abstract: 2SA758
Contextual Info: JMnic Product Specification 2SA758 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC898 APPLICATIONS ・For 80W audio amplifier power output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

2sc898

Abstract: hfe1 Audio Output Transistor Amplifier 2SA758 transistor 2sc898
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA758 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min.) ·Complement to Type 2SC898 APPLICATIONS ·Designed for use in audio amplifier power output stage and

2sc898

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC898 Features • • With TO-3 package Amplifier applications NPN Silicon Power Transistors Maximum Ratings Symbol V CEO V CBO V EBO IC

Contextual Info: 2SC898 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)110 V(BR)CBO (V)150 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC898

Abstract: 2SA758 80w audio
Contextual Info: SavantIC Semiconductor Product Specification 2SA758 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC898 APPLICATIONS ·For 80W audio amplifier power output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SC898

Abstract: 2SA758
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA758 DESCRIPTION •High Power Dissipation: PC= 80W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min.) ·Complement to Type 2SC898 APPLICATIONS ·Designed for use in audio amplifier power output stage and

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc897 hitachi

Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .

Contextual Info: J , One. \-S 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA758 DESCRIPTION • High Power Dissipation: Pc= 80W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage:V(BR)cEo=-110V(Min.)

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2sa726

Abstract: 2SA798 2Sa750 2SA706 2sa735 2SA798 equivalent 2SA725 2SC1432 2SA773 2SA762
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA701 -30 -5 -50 200 125 200 -6 -1 80* 12 2SA702 -50 -5 -50 200 125

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC1474

Abstract: 2SC897 2SC1403 2SA743B 2SC1116 2SC1445 2SC1402 2sc1419 2sc1826 2SC1115
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

2SC834

Abstract: 2sc879 2SC869 2SC882 2SC871 2SC880 2SC895 2SC897 2SC869 DATASHEET 2SC856
Contextual Info: Electrical characteristics Ta=25ºC DC Current Gain Tj fab/ft* Cob ºñ°í hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Absolutes maximum ratings (Ta=25ºC) PartNumber VCBO VEBO Ic (V) 2SC801 (V) Pc (mA) (mW) 75 5 500 2SC802 2SC803 2SC804 2SC805 2SC805A 60 60 15

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.