2SC4666 Search Results

2SC4666

Contextual Info: 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4666 Audio Frequency Amplifier Applications Switching Applications • • • • Unit: mm High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max)

2SC4666

Contextual Info: TO SH IBA 2SC4666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4666 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. nFE = ouu ~ _ nT Tig* _1.n 1_njPE • • • 2.1 ±0.1 1_ High Voltage High Collector Current

2SC4666

Contextual Info: TOSHIBA 2SC4666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4666 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • • • High hjpg High Voltage High Collector Current Small Packge 2.1 ± 0.1 1.25 ±0.1

Contextual Info: 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4666 Audio Frequency Amplifier Applications Switching Applications • • • • Unit: mm High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max)

KU 03

Abstract: MARKING KU 2SC4666
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4666 Features High hFE: hFE = 600 3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA max Small package 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

2SC4666

Contextual Info: 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4666 Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 · High voltage: VCEO = 50 V · High collector current: IC = 150 mA (max) · Small package

Contextual Info: T O SH IB A 2SC4666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4666 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • H igh IrpE hpE - 600 ~ 3600 • • • High Voltage High Collector Current Small Packge VCEO = 50V

Contextual Info: 2SC4666 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. U nit in mm 2.1 ± 0.1 • High hpE • High Voltage v CEO = 50V • High Collector Current IC = 150mA Max. • Small Packge 1.25Î0.1 hFE = 600 ~ 3600 2 -E S MAXIMUM RATINGS (Ta = 25°C)

TA 3600

Abstract: 2SC4666 ft 5000 IC503
Contextual Info: 2SC4666 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4666 ○ 低周波増幅用 ○ 一般スイッチング用 単位: mm • 直流電流増幅率が非常に高い。 : hFE = 600~3600 • 高耐圧です。 : VCEO = 50 V

Contextual Info: T O S H IB A 2SC4666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 1 Ç C d A fi f% AUDIO FREQUENCY AM PLIFIER APPLICATIONS. U n it in mm SWITCHING APPLICATIONS. 2.1 ± 0.1 ;.25±0.1 1._ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _n/>AA H ig h hjpjQ

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

Contextual Info: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Unit: mm Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.)

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

Contextual Info: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

1SS352 equivalent

Abstract: 1SS352 2SC4666 HN2E01F
Contextual Info: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Q1 Low Forward Voltage Drop :VF 3 =0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.)