1SS352 Search Results
1SS352 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 1SS352 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 80 V, 0.1 A, USC, AEC-Q101 | Datasheet |
1SS352 Datasheets (18)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 1SS352 | Kexin | Ultra High Speed Switching Application | Original | 30.29KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | Toshiba | Diode - Silicon Epitaxial Planar Type | Original | 140.84KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | Toshiba | Japanese - Diodes | Original | 293KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | TY Semiconductor | Ultra High Speed Switching Application - SOD-323 | Original | 55.72KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 80.43KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | Unknown | The Diode Data Book with Package Outlines 1993 | Scan | 86.78KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | Toshiba | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) | Scan | 122.53KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352 | Toshiba | DIODE | Scan | 124.09KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352,H3F | Toshiba | 1SS352 - Switching Diodes | Original | 207.72KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352(TH3,F,D) | Toshiba | 1SS352 - X34 PB-F USC M8 DIODE (LF), IFM=200MA | Original | 207.74KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352TH3FT | Toshiba | 1SS352TH3FT - Diode Switching 85V 0.1A 2-Pin USC T/R | Original | 207.74KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352TPH2 | Toshiba | 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode | Original | 207.74KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352TPH3 | Toshiba | 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode | Original | 207.74KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352(TPH3,F) | Toshiba | 1SS352 - DIODE 0.1 A, 85 V, SILICON, SIGNAL DIODE, USC, 1-1E1A, 2 PIN, Signal Diode | Original | 207.74KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352TPH4 | Toshiba | 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode | Original | 207.74KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352TPHR2 | Toshiba | 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode | Original | 207.74KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352TPHR3 | Toshiba | 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode | Original | 207.74KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1SS352TPHR4 | Toshiba | 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode | Original | 207.74KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS352 Price and Stock
Toshiba America Electronic Components 1SS352,H3XGF(TDiode Switching 85V 0.1A 2-Pin USC T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS352,H3XGF(T | 1,130 | 46 |
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1SS352,H3XGF(T | Cut Strips | 1,130 | 1 |
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1SS352,H3XGF(T | 22 Weeks | 3,000 |
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Get Quote | ||||||
Toshiba America Electronic Components 1SS352,H3F(TDiode Switching 85V 0.1A 2-Pin USC T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS352,H3F(T | 1,129 | 57 |
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1SS352,H3F(T | Cut Strips | 1,129 | 1 |
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1SS352,H3F(T | Cut Tape | 16,188 | 1 |
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| 1SS352,H3F(T | Tape & Reel | 16,188 | 100 |
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| 1SS352,H3F(T | Tape & Reel | 3,000 |
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1SS352,H3F(T | 2,044 |
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1SS352,H3F(T | 28 Weeks | 3,000 |
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1SS352,H3F(T | 22 Weeks | 3,000 |
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Toshiba America Electronic Components 1SS352,H3F(BDiode Switching 85V 0.1A 2-Pin USC Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS352,H3F(B | 348 | 348 |
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Toshiba America Electronic Components 1SS352,H3F- Tape and Reel (Alt: 1SS352,H3F) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS352,H3F | Tape & Reel | 180,000 | 24 Weeks | 3,000 |
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1SS352,H3F | 371,322 |
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1SS352,H3F | Reel | 3,000 |
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Toshiba America Electronic Components 1SS352(TH3KOITSB,EX34 PB-FREE USC-M8 DIODE (LF) - Tape and Reel (Alt: 1SS352(TH3KOITSB,E) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1SS352(TH3KOITSB,E | Tape & Reel | 24 Weeks | 3,000 |
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Get Quote | |||||
1SS352 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
smd diode UM
Abstract: smd diode marking um 1SS352 marking Um diode smd diode UM 85 smd diode UM 16
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1ss352od-323smd diode umsmd diode marking um+3 | |
1SS352Contextual Info: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) |
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1ss352 | |
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Contextual Info: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.5pF (typ.) |
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1ss352100ma | |
1SS352Contextual Info: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.5pF (typ.) |
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1ss352 | |
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Contextual Info: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.5pF (typ.) |
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1ss352 | |
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Contextual Info: 1SS352 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS352 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : V f 3 = 0.98V (Typ.) Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance |
OCR Scan |
1ss35220x20mm | |
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Contextual Info: Product specification 1SS352 SOD-323 +0.1 1.3-0.1 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Small Package Low forward voltage :VF 3 = 0.98 (Typ) :trr = 1.6ns (Typ) Small total capacitance :CT = 0.5 pF(Typ) 0.475 1.0max 0.375 +0.05 0.1-0.02 |
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1ss352od-323 | |
1SS352Contextual Info: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.5pF (typ.) |
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1ss352 | |
1SS352Contextual Info: 1SS352 SILICON EPITAXIAL PLANAR TYPE Ultra High Speed Switching Application Features • • PINNING Low forward voltage: PIN VF 3 = 0.98V (typ.) 1 Cathode 2 Anode Fast Reverse Recovery Time: trr = 1.6ns (typ.) • DESCRIPTION 2 1 Small Total Capacitance: |
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1ss352od-323 | |
PIN DIODE MARKING CODE wk
Abstract: wk marking code 1SS352
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1ss352od-323pin diode marking code wkwk marking code | |
marking CL
Abstract: 1SS352
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OCR Scan |
1ss352ta-25x20mm10tna+2 | |
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Contextual Info: TOSHIBA 1SS352 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SSB52 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vp 3 = 0.98V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : Crr=0.5pF (Typ.) |
OCR Scan |
1ss352ssb52961001eaa2 | |
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Contextual Info: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) |
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1ss352961001eaa2 | |
diode marking w2
Abstract: marking code w2 1SS352 marking code w2 sod323 W2 SOD323 marking 25 SOD-323 "MARKING CODE W2" marking W2 Fast reverse recovery W2
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1ss352od-323diode marking w2marking code w2+5 | |
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1SS352Contextual Info: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.5pF (typ.) |
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1ss352 | |
PIN DIODE MARKING CODE wk
Abstract: MARKING MS SOD323 1SS352 wk marking diode
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1ss352od-323pin diode marking code wkmarking ms sod323+1 | |
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Contextual Info: TOSHIBA 1SS352 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 3 52 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • Small Package • Low Forward Voltage V f 3 -0 .9 8 V (Typ.) • Fast Reverse Recovery Time tr r = 1.6ns (Typ.) • Small Total Capacitance |
OCR Scan |
1ss352961001eaa2 | |
1SS352Contextual Info: 1SS352 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS352 ○ 超高速スイッチング用 z z z z 単位: mm 2 端子小型外囲器なので、高密度実装に最適です。 順電圧特性が良い。 : VF 3 = 0.98V (標準) |
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1ss352100ma | |
TFSM
Abstract: 1ss3 1SS352
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OCR Scan |
1ss35220x20mm961001eaa2tfsm+1 | |
1SS352
Abstract: ultra fast 80V 100ma SOD323
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1ss352od-323ultra fast 80v 100ma sod323 | |
2N3904 331 transistor
Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
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OCR Scan |
2n39032n39042n39052n3906+16 | |
1SS352 equivalent
Abstract: 1SS352 HN2E05J RN2104F
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hn2e05jrn2104f1ss3521ss352 equivalent | |
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Contextual Info: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Unit: mm Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.) |
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hn2e01f150ma1ss3522sc4666 | |
SCJ0004N
Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
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scj0004ntpc6k01hmg01crg02+14 | |