1SS3 Search Results

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

Contextual Info: 1SS395 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 • • Small Package Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ijp = 5mA ± 0.1 1.25 ± 0.1 I* 3 oo + I - -ESt 2 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o

SS302

Contextual Info: 1SS302 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS302 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp 3 = 0.90V (Typ.)

Contextual Info: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)

Contextual Info: 1SS336 T O SH IB A 1SS336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0 .5 2 .5 - 0 . 3 : SC-59 : Vp 3 = 0.84V (Typ.) : trr = 7ns (Typ.) : Or = 7pF (Typ.) + 0 .2 5 1 .5 - 0 . 1 5 , 0 .9 5 Small Package

Contextual Info: 1SS388 TO SHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • • SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS388 Small Package Low Forward Voltage Low Reverse Current Unit in mm : VF 3 = 0.54V (Typ.) : Ir = 5//A (Typ.) M A X IM U M RATINGS (Ta = 25°C)

Diode marking TY

Abstract: IR switch smd diode marking um marking ty TY SMD diode 1SS314
Contextual Info: Diodes SMD Type VHF TUNER BAND SWITCH APPLICATIONS 1SS314 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Unit: mm +0.1 1.3-0.1 Small packag Small Total capacitance: CT = 1.2pF Max. Low series resistance: rs = 0.5 +0.1 2.6-0.1 1.0max (Typ.) 0.375

1SS393

Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS393 Features Low forward voltage:VF 3 = 0.54 V(Typ.) Low reverse current:IR = 5 A A bsolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol R ating U nit V RM 45 V R everse voltage

1SS379

Abstract: 0-110A
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Diode 1SS379 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small total capacitance: CT=3.0pF Typ. 1 0.55 Low reverse current: IR=0.1nA(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 Low forward voltage :VF=1.0V(Typ.)

smd diode a6

Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.

Marking s3

Abstract: smd transistor s3 1SS388
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS388 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low Forward Voltage :VF 3 = 0.54V(TYP.) Low Reverse Current :IR = 5 Ìa(TYP.) +0.1 1.6-0.1 +0.05 0.1-0.02

1SS321

Contextual Info: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Unit in mm VF=0.42V Typ. Low Reverse Current lR=500nA(Max.) Small Package SOT-23MOD MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Maximum(Peak Reverse Voltage

1SS300

Contextual Info: 1SS300 SILICON EPITAXIAL PLANAR T Y P E ULTRA HIGH SPEED SWITCHING APPLICATION. Small Package Unit in mm 21 ±0.1 SC-70 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 1.25 ± 0.1 VF=0.92V Typ. t r r = l . 6ns(T yp.) Ct = 2 . 2 p F ( T y p . )

"UHF DETECTOR"

Contextual Info: Ordering number:EN4690 _ 1SS375 No.4690 Schottky B arrier Diode SANYO i VHF, UHF detector and Mixer Applications F e a tu re s •Series connection of 2 elem ents in a very sm all-sized package facilitates high-density m ounting and perm its lSS375-applied equipm ent to be made sm aller.

Contextual Info: Diodes High–voltage band switching diode 1SS376 FApplications High voltage switching FExternal dimensions Units: mm FFeatures 1)ăHigh reliability. 2)ăSmall surface mounting type. (UMD2) 3)ăPeak reverse voltage guaranteed at 300V with this size. FConstruction

Contextual Info: 1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm z Small package 0.22±0.05 z Fast reverse recovery time: trr = 1.6 ns typ. Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current

Contextual Info: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications 0.22±0.05 Unit: mm Maximum peak reverse voltage Symbol Rating Unit VRM 85 V 2 3 0.13±0.05 Characteristic 1 0.5±0.05 Absolute Maximum Ratings (Ta = 25°C)

1SS32

Contextual Info: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic

smd diode UM

Abstract: smd diode marking um 1SS352 marking Um diode smd diode UM 85 smd diode UM 16
Contextual Info: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION DIODE 1SS352 SOD-323 +0.1 1.3-0.1 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Small Package Low forward voltage :VF 3 = 0.98 (Typ) :trr = 1.6ns (Typ) Small total capacitance :CT = 0.5 pF(Typ)

k9 diode

Abstract: smd transistor marking 26 1SS348
Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS348 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF 3 = 0.56V(Typ). 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1

Contextual Info: 1SS368 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS368 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Vf 3 - 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.)

Diodes smd marking f5 reverse voltage

Abstract: MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Type 1SS370 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 :VF 3 = 0.9 V(Typ) :trr = 60ns (MAX.) :CT = 1.5 pF(Typ) 1 0.55 Small total capacitance +0.1 1.3-0.1 Fast reverse recovery time +0.1 2.4-0.1 Low forward voltage

1SS377

Abstract: marking O9
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING DOIDE 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1