1SS384 Search Results

Contextual Info: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o

1SS384

Contextual Info: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol

1SS384

Abstract: EL marking
Contextual Info: 1SS384 TOSHIBA TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp 2 = 0.23V (TYP.) )Ijr = 5mA M A X IM U M RATINGS (Ta = 25°C)

1SS384

Contextual Info: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic

1SS384

Contextual Info: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS384 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 3 84 LOW VOLTAGE HIGH SPEED SWITCHING • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp 2 = 0.23V (TYP.) (a)Ijr = 5mA MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol

Contextual Info: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o

1SS384

Contextual Info: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic

1SS384

Contextual Info: 1SS384 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS384 ○ 低電圧高速スイッチング用 単位: mm z 4 端子超小型外囲器に独立したダイオードを 2 個搭載しており 超高密度実装に最適です。

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

39T0167

Abstract: U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A
Contextual Info: A B C D E F G H J K L M N DATE REL 9 EC NO. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU 1/3

cdb 400E

Abstract: Memsic 2125 PCI4520 ADP3806 C401 class q 607p rome-1 planar 8C546 PMH4 CRYSTAL g 472b
Contextual Info: A B C D E F G H J K L M N DATE 9 APOLLO-9 PLANAR VER 0.60 REL RED RED M9/KINNERETH-R BASE DEC/26/2003 7 6 5 4 3 2 1 13R1151 A TITLE PAGE EC HISTORY CPU(1/3) CPU(2/3) CPU(3/3) ITP CONN VCCCPUCORE DECOUPLING MCH-M(1/4) MCH-M(2/4) MCH-M(3/4) MCH-M(4/4) DDR SO DIMM CONNECTOR 0

474j capacitor

Abstract: AN12942A bd7 c836 476j 13R1088 radeon R515 692N 2A 473J D20001 596B
Contextual Info: A B C D E F G H J K L M N DATE REL 9 EC NO. 11/21/03 Q 13R1088 J45843A ROME-1 PLANAR M9/KINNERETH-R/WO-ACC BASE VER 0.99 P PART NO. 9 DEVELOPMENT NO. Q/M /82 1 NOV/21/2003 8 8 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22.

558B

Abstract: S558-5999-U1 F ky U10 ADP3205 PMH4 C949
Contextual Info: CR-1 : @DESIGN.J3E SCH_1 :PAGE1 A B C D E G F H J K L M N DATE 9 YUKON/KODIAK VER SE 10/20/03 PLANAR 10/20/2003 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU(1/3) CPU(2/3) CPU(3/3) ITP CONN VCCCPUCORE DECOUPLING GMCH-M(1/5) GMCH-M(2/5) GMCH-M(3/5) GMCH-M(4/5) GMCH-M(5/5)

73D31

Abstract: D9322 PC8394T NQ82915GM 88sa8040 PC8394T-VJG connector IDE TO SATA SIL3811 USB 1.0 A Socket wistron PC8394
Contextual Info: Intel Mobile CPU Clock Generator ICS954204 IDTCV139/CY28441 14 Y Note-6 Block Diagram Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz 3,4,5 AGTL+ FSB Thermal Sensor LM26 DDR2 SODIMM Socket 4 6,7,8,9,10 SMBus ATMEL AT24RF08CN 48 HDD

PMH4

Abstract: ADP3205 S558-599 t9 547B34 qm77 ky U10 357n c840 TP231005 ibm apollo
Contextual Info: CR-1 : @DESIGN.J3E SCH_1 :PAGE1 A B C D E F G H J K L M N DATE 9 YUKON/KODIAK VER SE PLANAR 10/20/03 EC NO. P PART Q NO. VER.SE 9 DEVELOPMENT NO. Q/M 1 6 5 4 3 2 1 78 10/20/2003 8 7 / 8 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20.

BI 335A

Abstract: PC8394T PC8394 EZJ1V270GA IBM 88sa8040 88sa8040 adp3205 NLFC322522T-091M-GPF SI4435ADY KT 117B
Contextual Info: A B C D E F G H J K L M N DATE DEV JUNEAU-5 PLANAR SIT 9 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 8 7 6 5 4 3 2 1 TITLE PAGE 45. EC HISTORY

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.