1SS32 Search Results

1SS321

Contextual Info: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Unit in mm VF=0.42V Typ. Low Reverse Current lR=500nA(Max.) Small Package SOT-23MOD MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Maximum(Peak Reverse Voltage

1SS32

Contextual Info: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC−70 Maximum Ratings (Ta = 25°C) Characteristic

1SS321

Contextual Info: 1SS321 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS321 ○ 低電圧高速スイッチング用 単位: mm : SC-59 : VF 2 = 0.42V (標準) : IR = 500nA (最大) z 外形が小さい。 z 順電圧が小さい。

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching

1SS321

Contextual Info: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low-Voltage High-Speed Switching z Low forward voltage: VF = 0.42 V typ. z Low reverse current: IR = 500 nA (max) z Small package: SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 1SS322 TO SHIBA TO SHIBA DIODE 1 SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-70 • • • 1.25 ± 0.1

diode ltn

Contextual Info: TOSHIBA 1SS321 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE <; <; 1 WÊÊF • 9ÊÊF 3 1 1 W ÊT ■ Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. -i 0.5 2.5 -0.3 + 0-25 Low Forward Voltage : 0.42V Typ. Low Reverse Current : lR = 500nA (Max.) Small Package

diode MARKING A9

Abstract: transistor marking A9 smd diode a9 smd transistor a9 smd A9 marking a9 smd diode UM A9 transistor SMD g125t SMD MARKING
Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS322 Features Low forward voltage:VF 3 = 0.54 V(Typ) Low reverse current:trr = 5 A (Typ) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it V RM 45 V R e v e rs e v o lta g e

1SS322

Contextual Info: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic

1SS321

Contextual Info: TOSHIBA 1SS321 TO SHIBA DIODE 1 SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp = 0.42V Typ. Low Reverse Current • ÏR = 500nA (Max.) : SC-59 (SOT-23MOD) Small Package M A X IM U M RATINGS (Ta = 25°C)

1SS321

Contextual Info: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF = 0.42V typ. z Low reverse current : IR = 500nA (max) z Small package : SC-59 (SOT-23MOD) Absolute Maximum Ratings (Ta = 25°C)

1SS321

Contextual Info: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF = 0.42V typ. l Low reverse current : IR = 500nA (max) l Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic

1SS322

Contextual Info: 1SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Unit in mm 2.1 ± 0.1 . Low Forward Voltage : V f ~ 0 •54V Typ. . Low Reverse Current : lR=5/iA(Max.) . Small Package : SC-70 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL

SS321

Contextual Info: 1SS321 T O SH IB A TO SHIBA DIODE 1 SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Unit in mm Low Forward Voltage : Vp = 0.42V Typ. Low Reverse Current : lR = 500nA (Max.) Small Package : SC-59 (SOT-23MOD) M A X IM U M RATINGS (Ta = 25°C)

f1 smd marking

Abstract: 1SS321 smd marking sc sot-23 sot 1301 F9 SOT23
Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS321 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VF = 0.42 V Typ Low reverse current: IR =500 nA(Max) 1 0.55 Low forward voltage: +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05

1SS321

Contextual Info: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF = 0.42V typ. Low reverse current : IR = 500nA (max) Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic

1SS322

Contextual Info: 1SS322 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS322 ○ 低電圧高速スイッチング用 単位: mm : SC-70 : VF 3 = 0.54V (標準) : IR = 5 A (最大) z 外形が小さい。 z 順電圧が小さい。 z 逆電流が小さい。

1SS321

Contextual Info: 1SS321 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS321 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF = 0.42V typ. Low reverse current : IR = 500nA (max) Small package : SC-59 (SOT-23MOD) Maximum Ratings (Ta = 25°C) Characteristic

1SS322

Contextual Info: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic

1SS322

Contextual Info: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC−70 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: Product specification 1SS321 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VF = 0.42 V Typ Low reverse current: IR =500 nA(Max) 1 0.55 Low forward voltage: +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1

Contextual Info: Product specification 1SS322 Features Low forward voltage:VF 3 = 0.54 V(Typ) Low reverse current:trr = 5 A (Typ) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol R a tin g U n it V RM 45 V R e v e rs e v o lta g e VR 40 V M a xim u m (p e a k ) fo rw a rd c u rre n t

MARKING toshiba

Abstract: 1SS322 TOSHIBA DIODE
Contextual Info: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC−70 Maximum Ratings (Ta = 25°C) Characteristic Symbol