SS322 Search Results

Contextual Info: SS322 TO SHIBA TO SHIBA DIODE 1 SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-70 • • • 1.25 ± 0.1

Contextual Info: SS322 TO SHIBA TO SHIBA DIODE 1 SS322 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-70 • • • 1.25 ± 0.1

SS321

Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

2N3442

Abstract: 2N4347
Contextual Info: File Num ber 528.1 2N3442, 2N4347 High-Voltage Silicon N-P-N Transistors TERMINAL DESIGNATIONS H ig h-P o w er Devices for Applications in Industrial and Com m ercial Equipment F L A N G E Features: • Lo w saturation voltages ■ H igh dissipation c a p ability — 100 W (2N4347)

Contextual Info: TITLE: REVISION CA | SEE RG 7. SHEET 3 - (NO. OF POS. X .100 [2 -5 4])± (36 POS. - 3.600 [91.44]* REF) DO N O T SCA LE T H IS DRAWING ONE PUCE OEQUALS ± .1 [3] THREE PUCE OECNMB ± .009 [.13] A N *fS TOO PUCE OECMMB *.0 1 [,3] FOUR PUCE DECIMALS 4.0020 [.061] * 2

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

Contextual Info: DWB NO: REV. | S | ONE PLACE DECIMALS ± .1 TWO PLACE DECMAL& ± .01 TABLE 1 -0 1 -0 2 PIN T -1 S1 3 -2 0 -X -2 T -1 S1 3 -2 0 -X -2 OVERALL LENGTH .323 *.323 1+ §§ LEAD STYLE 8.204 8.204 THREE PLACE DECMALS FOUR PLACE DECRIALS: M M T -1 X X -X X -X - .126 |3.20

PPP-55

Abstract: 1S13 T-1513-05-XX-2 LC-09-TM T-1S13-1 S-1305
Contextual Info: TITLE: REVISION A P T ONE PLACE DECIMALS* .1 [2 .5 4 ] THREE PLACE DECIMALS*.0 0 5 [-1 2 7 ] 0 PLACE DECIMALS* .01 [- 2 5 4 ] FOUR PLACE DECIMALS* .0 0 2 0 [.0 5 0 8 ] ANI^ * 2 2 m m EJECTO R HEADER ASSEMBLY E H T — 1 X X — 01 — X X - D - X X - X X - X - X X — XX

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

SS322

Contextual Info: REV. ü TITLE: No. OF POS X .05 0 -I- .010 ± .005 [No. OF POS X 1.27 + .2 5 ] ±.127 ONE PLACE DECMAL& ± .1 TWO PLAGE DECIMALS: ± .01 (No OF POS X .0 5 0[1 .2 7]) - .05 0[1 .2 7] (TOL NON-ACCUM) RSM - 1XXBODY LENGTH SPECIFICATION - 0 2 THRU - 3 6 POSITIONS

feme mgp A 002 23 08

Abstract: MIP 411 MIP 411 diagrama FEME IC stk 412 410 FEME MGP Feme mgp a 002 LI26 stk 412 -420 TL 2272
Contextual Info: MC68HC11N/D M 6 8 H C 11 N S E R I E S TECHNICAL DATA MOTOROLA M68HC11 N SERIES HCMOS MICROCONTROLLER UNITS Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume

CAC-4220-2

Abstract: CAC-4086 Relief Valve DATA SHEET KK-4835 8080 Manual 4835 SUDL-403-1 air cylinder MP2-F2520-1 MANUAL-19
Contextual Info: F2520 Oil Free Repair Manual 17 September, 2000 TAB: 2.5 Horsepower - Single Cylinder F2520 cont’d KEY NO. 4 7 8 9 11 12 13 14 15 16 17 18 19 20 22 24 26 27 28 29 30 31 32 34 35 36 37 38 39 40 42 43 45 46 48 50 51 52 53 54 PART NUMBER CAC-1140 CAC-1121

Contextual Info: REV. I B Z I ' FIG U R E No. OF POS. X .0 5 0 + .1 25 REF [1 .2 7 ] [3 .1 8 ] 1 ANGLES ONE PLACE DECIMALS ±.1 [2,54]tHREE PLACE DECIMALS t '005 TWO PLACE DECIMALS ±.01 [.25]FOUR PLACE DECIMALS ±,0020 [.0 5] ± 2 ' TH R O U G H H O LE - 0 1 ,- 1 1 ,-2 1 ,-3 1

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"

SS322

Contextual Info: REV. AW PARTS TO BE PACKAGED IN TUBES AS SHOWN ^BBBBBBBBBBiBBBBBBSBiF - 5-LOADING DIRECTION ARROW POLARIZING NOTCH P T -1 - 2 4 - 0 1 - 0 9 SEE TABLE 2 If nun Q DO NOT SCALE FROM THIS PRINT LOADING DIRECTION ARROW ULE2S ODEWX N01ED

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

Contextual Info: TITLE: REV. I K I ONE PLACE DECIMALS ±,1 [2.54JTHREE PLACE DECIMALS ± 0 0 5 [.13] ANGLES TWO PLACE DECIMALS ±,Q1 [.25fOUR PLACE DECIMALS ± .0020 [.05] ± 2 ’ .0 5 0 x .0 5 0 T E R M IN A L S T R IP m nm i FIG. 3 -K P O LY AM ID E FILM P A D FIG. 5 -A