2SC3258 Search Results

4336

Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
Contextual Info: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329

2SC3216

Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
Contextual Info: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265

2sc3258

Abstract: 2SA1293
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . • • • 2SC3258 A Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) at Ic = 3A High Speed Switching Time : tgtg =1.0^8 (Typ.)

2SC3258

Abstract: 2SA1293 2SC325 2sa129
Contextual Info: Inchange Semiconductor Product Specification 2SC3258 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1293 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

2SA1293

Abstract: 2SC3258 AC75
Contextual Info: 2SA1293 TOSHIBA 2 S A 1 293 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS. • Low Collector Saturation Voltage : v CE(sat) = -0.4V (Max.) at Ie = -3 A High Speed Switching Time : tgtg^l.O/^siTyp.) Complementary to 2SC3258.

2SA1293

Abstract: 2SC3258
Contextual Info: SavantIC Semiconductor Product Specification 2SA1293 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3258 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

2SA1293

Abstract: 2SC3258
Contextual Info: JMnic Product Specification 2SA1293 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC3258 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING

2SC3258

Abstract: 2SA1293
Contextual Info: SavantIC Semiconductor Product Specification 2SC3258 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1293 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

11NK

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3258 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. ia3MAX. FEATURES: 03.6±a2 . Low Collector Saturation Voltage : vCE sat -Q-4V(Max.) m at Ic=3A . High Speed Switching Time : tstg=l.0«s(Typ.) . Complementary to 2SA1293.

2SA1293

Abstract: 2SC3258
Contextual Info: Inchange Semiconductor Product Specification 2SA1293 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3258 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

Contextual Info: 2SA1293 TOSHIBA 2 S A 1 293 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : v CE(sat) = -0.4V (Max.) at Ic = -3 A High Speed Switching Time : tstg= 1.0,«s (Typ.) Complementary to 2SC3258.

2SC3258

Abstract: 2SA1293
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1293 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max.)@IC= -3A ·Fast Switching Speed ·Complement to Type 2SC3258 APPLICATIONS ·Designed for high current switching applications.

2SC2534

Abstract: 2SC3558
Contextual Info: m —3 Application * M AX. Atr O •O IC v CEO Type No. 2SC3558 2SC2562 2SA1012 2SC3258 2SA1293 2SD553 2SB553 2SD843 2SB753 2SC3257 SWITCHING REG. 2SA1328 2SC3346 2SA1329 2SC36Z5 A 0.6 2 0.2 f=1MHz VCB tön tstg tf (MHz) CV) (A) (pF) (V) (ms) (ß s) (ms)

2SC3258

Abstract: 2SA1293
Contextual Info: 2SC3258 S IL IC O N NPN E P IT A X IA L T Y P E PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q311AX. FEATURES: 03.6±O.2 . Low Collectpr Saturation Voltage : VCE(sat)=0.4V(Max.) w at IC=3A \ . High Speed Switching Time : tstg=l •0/is(Typ.)

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SA1012

Abstract: 2SA1293 2SC2562 2SC3258
Contextual Info: TOSHIBA Powered by TO-220-AB 20 20 40 40 75 75 40 40 60 80 80 100 100 20MIN. 10MIN. 10MIN. 10MIN. 8-40 8-40 12MIN. 10MIN. 10MIN 5-30 5-30 6-30 6-30 7 10 2SA1328 2SA1329 12 2 3 4 5 8 8 12 5 5 5 5 5 5 5 5 5 5 5 5 5 0.1 0.5 0.5 0.8 2 2 3 3 4 5 5 8 8 1 1 1 0.6

2SA1293

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1293 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: 1Q.3MAX. 03.6ÌQ.2 . Low Collector Saturation Voltage : VcE sat =-0.4V(Max.) cf w - ä St<£5 at Ic=-3A . High Speed Switching Time : tstg=l.O^s(Typ.)

Contextual Info: T ^ H T Ü 7 T T ¥ T S C R r r E 7Ö P T Ö > D T J ciDc17ES0 00075=14 T J — i^ i INDUSTRIAL APPLICATIONS U n i t i n ram FEATURES: 1Q3MAX. . Low Collector Speed Switching Time . Complementary to at 0&6± X2 k Saturation Voltage • VcE(sat =-0.4V(Max.)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

2SC3258

Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
Contextual Info: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T

Toshiba 355-1

Abstract: 2SC3555 3563 2SC351 2SC4158 2SC3531 2sc3153 2SC3170 NEC 3552 2SC3556
Contextual Info: 166 - m % Type No. 2SC 3534 J 2SC 3535 ^ 2SC 3536 V 2SC 3540 ^ tt B m. B B V m ì s 2SC 3544 , 2SC 3545 ^ 2SC 3546 B B m 2SC 3547 2SC 3547A 2SC 3547B 36 $ S $ 3548 3549 3550 3551 3552 3553 3554 3555 3556 3557 3558 3559 3560 3561 3562 S JE S S 2 / *±S» * ± * »

2SA1293

Abstract: 2SC3258 Q15A
Contextual Info: T O S HIBA Sb {DISCRETE/OPTO} 9097250 TOSHI BA DTjT0T7a5D D O O Tbbb 1 DI S C R E T E / O P T O > S IL IC O N NPN E P IT A X IA L T Y PE (PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm ^3.6±a2 1Q3 M A X . HIGH CURRENT SWITCHING APPLICATIONS. FEATURES:

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)