2SA129 Search Results

2SA1298

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1298 Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATIONS. +Û5 2.5 — a 3 FEATURES: . High DC Current Gain : hpE=100~-320 . Low Saturation Voltage : VcE sat =-0-4V(Max.) (Ic=-500mA, lB=-20mA) . Suitable for Driver Stage of Small Motor

2SA1290

Abstract: 2SC3254
Contextual Info: JMnic Product Specification 2SA1290 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Short switching time ・Low collector saturation voltage ・Complement to type 2SC3254 APPLICATIONS ・Various inductance lamp drivers for electrical equipment

2SA1291

Abstract: 2SC3255
Contextual Info: AOK AOK Semiconductor P ro d u c t S pecification S ilicon PNP P ow er T ransistors 2SA1291 DESCRIPTION • With TO-220 package • Low collector saturation voltage. • Short switching time. • Complement to type 2SC3255 APPLICATIONS • Various inductance lamp drivers for

2SA1291

Contextual Info: ["O rdering number: E N 1201C 2SA1291/2SC3255 N0.I2OIC PN P/N PN Epitaxial P la n ar Silicon Transistors SAW O i 60V/10A High-Speed Switching Applications Applications • Various inductance lamp drivers for electrical equipment. •Inverters, converters strobo, flash, fluorescent lamp lighting circuit .

2SA1293

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1293 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: 1Q.3MAX. 03.6ÌQ.2 . Low Collector Saturation Voltage : VcE sat =-0.4V(Max.) cf w - ä St<£5 at Ic=-3A . High Speed Switching Time : tstg=l.O^s(Typ.)

2SA1296

Abstract: 2SC3266
Contextual Info: 2SA1296 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1296 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3266 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)

2SC3266

Abstract: 2SA1296
Contextual Info: 2SC3266 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3266 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1296 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)

2SC3254

Abstract: 2SA1290
Contextual Info: SavantIC Semiconductor Product Specification 2SC3254 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Short switching time ·Low collector saturation voltage ·Complement to type 2SA1290 APPLICATIONS ·Various inductance lamp drivers for electrical equipment

2SC3263

Abstract: 2SA1294 transistor 2sa1294
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1294 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3263 APPLICATIONS ·Designed for audio and general purpose applications

Contextual Info: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.

2SA1298Y

Contextual Info: MCC 2SA1298-O 2SA1298-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • Power switching application Low frequency power amplifier application

2SC3264

Abstract: 2SA1295 MP100M 2SA1295 2SC3264
Contextual Info: 2SC3264 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1295 •Electrical Characteristics Symbol Conditions 2SC3264 Unit VCB=230V 100max µA VEB=5V 100max µA IC=25mA 230min V 24.4±0.2 VCEO 230 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=5A

2SC3265-O

Abstract: 2sc3265
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SC3265-O 2SC3265-Y Features • Power switching application x Complementary to 2SA1298 x Low frequency power amplifier application

Contextual Info: 2SA1298LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT2SC3265LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW 0.4

2SA1298

Contextual Info: MCC 2SA1298-O 2SA1298-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • Power switching application Low frequency power amplifier application

2SA1291

Abstract: 2SC3255
Contextual Info: Inchange Semiconductor Product Specification 2SA1291 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage. ·Short switching time. ·Complement to type 2SC3255 APPLICATIONS ·Various inductance lamp drivers for

2SA1298

Abstract: hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 IC =-500 mA, IB =-20 mA 0.55 Low saturation voltage: VCE(sat) = -0.4V(max) +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain: hFE = 100 320 0.4 3 Features 2 +0.1

2SA1290

Abstract: 2SC3254 CP53
Contextual Info: Ordering number:ENN1200D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1290/2SC3254 60V/7A High-Speed Switching Applications Package Dimensions unit:mm 2010C [2SA1290/2SC3254] 10.2 3.6 4.5 5.1 2.7 1.3 15.1 • Various inductance lamp drivers for electrical

2SA1291

Abstract: 2SC3255
Contextual Info: Ordering number:ENN1201D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1291/2SC3255 60V/10A High-Speed Switching Applications Package Dimensions unit:mm 2010C [2SA1291/2SC3255] 10.2 3.6 4.5 5.1 2.7 1.3 15.1 • Various inductance lamp drivers for electrical

2SA1296

Abstract: 2SC3266
Contextual Info: 2SA1296 TO SH IBA 2 S A 1 296 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS . 5.1 MAX. • • Low Saturation Voltage : V qe (sat)“ —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.

A1297

Abstract: 2SA1297 2SC3267
Contextual Info: 2SA1297 TO SH IBA 2 S A 1 297 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V q E (sat)“ —0.5V (Max.) @Iq = —2A Complementary to 2SC3267.

2SA12

Abstract: 2SA1296 2SC3266 SA12
Contextual Info: TOSHIBA 2SA1296 2 S A 1 296 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS . 5.1 M AX. • • Low Saturation Voltage : V qe (sat)= —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.

2SB5950

Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Contextual Info: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect

2SA1297

Abstract: 2SC3267
Contextual Info: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)