2SC351 Search Results

2SC3513

Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3513 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25

Contextual Info: SMD Type Product specification 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE sat = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515

2SA1386

Abstract: transistor 2sa1386 2SA1386A 2SC3519 2SC3519A transistor 2sc3519 power transistor audio amplifier 500 watts
Contextual Info: ÆàMOSPEC HIGH-POWER PNP SILICON POWER TRANSISTORS PNP 2SA1386 2SA1386A .designed for use in general-purpose amplifier and switching application . FEATURES: * Recommend for 105W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SC3519 & 2SC3519A

Contextual Info: Transistors IC SMD Type Product specification 2SC3513 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25

2SC3519

Abstract: 2SC3519A transistor 2sc3519 2SA1386
Contextual Info: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A VCB= V IEBO 15 A V(BR)CEO µA 100max VEB=5V 160min IC=25mA 180min V 4 A hFE VCE=4V, IC=5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V Tj 150 °C fT VCE=12V, IE=–2A

Hitachi DSA002755

Contextual Info: 2SC3513 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline 2SC3513 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2

U1 3515

Abstract: 2SA1384 2SC3515
Contextual Info: 2SC3515 TOSHIBA 2SC3515 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS 1.6 M AX — CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS 1.7M AX. 0.4 ± 0 .0 5

Contextual Info: SANKEN ELECTRIC CO LTD SSE 2SC3519 2SC3519A /-r>i “ 25*C V Absolute M ax im u m Ratinas “ Symbol VCBO VcEO Vebo lc Ib Pc T) 2SC3519 160 160 2SC3519A 180 180 Unit — rVr — • 7^D 741 DGQCnsa 2flfl HSAKJ Silicon NPN Epitaxial Planar ☆APT ☆Complement to type 2SA1386 thru 2SA1386A

2SC3512

Contextual Info: HITACHI 2SC3512 — SILICON NPN EPITAXIAL UHF/VHF WIDE BAND AM PLIFIER 1, Hint 2 CwHItr J C c% w r {Dmvwifins innvn JEDEC TO-92) I ABSOLUTE M AXIMUM RATINGS (Ta=25°C) hem Symbol M AXIMUM COLLECTOR DISSIPATION CURVE 2S0512 1 Unit Colleeioi to base voltage

2SA1386

Abstract: 2SA1386A 1386A
Contextual Info: 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3519/A Application : Audio and General Purpose 2SA1386 2SA1386A Unit –100max –100max µA –160 –180 15.6±0.4 9.6 VCB= –180min –160min IC=–25mA IB –4 A hFE VCE=–4V, IC=–5A

2SA1384

Abstract: 2SC3515
Contextual Info: 2SC3515 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC3515 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS U M AX. High Voltage : V c b O = 300V> v CEO = 300 v

SC62 marking JB

Abstract: 2SA1384 2SC3515 oc sc62
Contextual Info: TO SH IB A 2SC3515 2SC3515 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASM A DISPLAY, NIXIE TUBE DRIVER APPLICATIONS 1 .6 M A X . CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS 1 .7 M A X .

vqe 14 display

Abstract: 2SA1384 2SC3515
Contextual Info: 2SC3515 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC3515 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS High Voltage : V c b O = 300V> v CEO = 300 v

2SA1386

Abstract: 2SA1386A 1386A transistor 2sc3519 DSA0016503 transistor 2sa1386
Contextual Info: 2SA1386/1386A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3519/A –180 V(BR)CEO –180min –160min IC=–25mA IB –4 A hFE VCE=–4V, IC=–5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=–5A, IB=–0.5A –2.0max Tj Tstg 150 °C fT VCE=–12V, IE=2A

2SC3128

Abstract: 2SC3510
Contextual Info: H ITACH I 2 S C 3 1 2 7 -2SC 3128, 2SC 3510 SILIC O N NPN EPITAXIAL _ UHF/VHF W IDE BAND A M PLIFIER 2 S C 3 Î2 7 * MPAK 2SC3124, 2SC3510 t r r i LÌ »4VC ' t.iv-! >. S fiV r (J ê D ê C TO-92) ASSOLUTE MAXIMUM RATINGS 0 ^ 2 ^ 0 licm

2SK2752

Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Contextual Info: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867

2SA1386

Abstract: 2SA1386A
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1386 2SA1386A Silicon PNP P o w er Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose PINNING PIN DESCRIPTION 1 Base o Collector:conr>ected to

Contextual Info: SMD Type Product specification 2SC3515 Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE sat = 0.5V (max) Small Collector Output Capacitance: Cob = 3pF(typ.) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SA1384

2SA1384

Abstract: 2SC3515
Contextual Info: 2SC3515 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC3515 ○ 高電圧制御用 ○ プラズマディスプレイ, ニクシー管駆動用 ○ ブラウン管輝度調整用 単位: mm • 高耐圧です。 : VCBO = 300 V, VCEO = 300 V

3519A

Abstract: 2SA1386 2SA1386A 2SC3519
Contextual Info: JMnic Product Specification 2SA1386 2SA1386A Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SC3519/3519A APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

npn smd 2a

Abstract: 2SC3518-Z
Contextual Info: Transistors SMD Type NPN Silicon Epitaxia 2SC3518-Z TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 High DC current gain.

Hitachi DSA002755

Abstract: 2SC3128 2SC3510 2SC3127
Contextual Info: 2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline 2SC3127, 2SC3128, 2SC3510 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SC3127* 1 2SC3128 2SC3510 Unit Collector to base voltage VCBO 20 20 20 V Collector to emitter voltage

2SC3513

Contextual Info: HITACHI 2SC3513 SILIC O N NPN EPITA XIA L UHF/VHF W ID E 8AND A M P LIFIER i , 0.1 LJ I. yjnJiM 3 lin e 3 C iilltcw r <l linenvuns in nvn) M PA K ) I A B S O L U T E M AXIMUM R A T IN G S <Ta=25*C) Iic in Symbol MAXIMUM C O LL EC T O R D ISSIPA T IO N CURVE

2SC3514

Abstract: transistor 2sa1 2SA1383 transistor TRANSISTOR Y7 2SA1383
Contextual Info: 2SA1383 2SC3514 P N P / N P N o : t " ^ + ' > 7 ’; u J K ' > □ > b PN P / N P N Silicon Epitaxial Transistor Audio Frequency Pow er Amplifier 2SA 13*3/2SC 3514li fcH *«a««m t L X til - SsW S£ » t - iM / P A C K A G E D IM E N S IO N S (Unit : mm