2SB942 Search Results

2SB942

Abstract: 2SB942A 1267A
Contextual Info: Inchange Semiconductor Product Specification 2SB942 2SB942A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A

2SB942

Abstract: 2SB942A 2SD1267 2SD1267A
Contextual Info: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SD1267 base voltage 2SD1267A Collector to 2SD1267 Ratings

IB204

Abstract: 2SB942 2SB942A 2SD1267 2SD1267A
Contextual Info: Power T ransistors 2SB942, 2SB 942A 2SB942, 2SB942A Silicon PNP Epitaxial Planar Type P ackage Dim ensions. AF Pow er Am plifier Com plem entary Pair with 2 S D 1 2 6 7 , 2 S D 1 2 6 7 A U nit ! mm 4.4iriax. 10.2max. 2.9 max. • Features • High DC current gain Ii f e and good linearity

2SB942

Abstract: 2SB942A
Contextual Info: JMnic Product Specification 2SB942 2SB942A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SD1267/1267A

Contextual Info: Power T ransistors 2SD1267, 2SD1267A 2SD1267, 2SD1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U n it ! m m 4 .4 m a x . • Features 2.9max. • High DC current gain hFE and good linearity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity

2SB596

Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
Contextual Info: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T

Contextual Info: 2SB942Q Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)4 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)4

2SD1267

Abstract: 2SD1267A
Contextual Info: Inchange Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage ・Complement to type 2SB942/942A

2SB0942

Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 10.0±0.2 4.2±0.2 M Di ain sc te

2SB942

Abstract: 2SB942A 2SD1267 2SD1267A
Contextual Info: Power Transistors 2SB942, 2SB942A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A Unit: mm • Features Parameter TC=25˚C Symbol Collector to 2SB942 base voltage 2SB942A Collector to 2SB942 Ratings

2SD1267A

Abstract: 2SB0942 2SB0942A 2SB942 2SB942A 2SD1267
Contextual Info: Power Transistors 2SB0942 2SB942 , 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • Large collector-emitter saturation voltage VCE(sat)

2SB0942

Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
Contextual Info: Power Transistors 2SB0942, 2SB0942A 2SB942, 2SB942A Silicon PNP epitaxial planar type Unit: mm Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit VCBO −60 V 2SB0942 −60 VCEO 16.7±0.3 1 2 3 −5 V Peak collector current

2SB942A

Abstract: 1267A 2SB942
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SD1267/1267A

2SB942

Abstract: 2SB942A 2SD1267 2SD1267A
Contextual Info: Power T ransistors 2SB942, 2SB942A 2SB942, 2SB942A Silicon PNP Epitaxial Planar Type Package Dimensions. AF Power Amplifier Complementary Pair with 2SD 1267, 2SD 1267A U nit ! mm 4 .4niax. 10.2max. • Features 2.9 max. • High DC cu rren t gain h F E>

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A • Features 4.2±0.2 5.5±0.2

2SB0942

Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
Contextual Info: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 2SB942 and 2SB0942A (2SB942A) Unit: mm • Features Parameter (TC=25˚C) Symbol Collector to 2SD1267 base voltage 2SD1267A Collector to

NEC 1357

Abstract: 2sa1175 2SB710 2SA914 2SA937 2SA1091 2SA953 2SA1309A 2sa1361 2SA1142
Contextual Info: 29 - a « a « Manuf. Type No. ;¥ Z SANYO U 2 TOSHIBA B S NEC ÌL HITACHI m ± FUJITSU ì1 tfl T MATSUSHITA a £ 2SA953 2SA1309A 2S A 1352 Z 2SA1142 2SA914 2 SA Z 2 S A 1 3 51 / 1 353 > h m. MITSUBISHI □ — ROHM A 2SA937 2SB1011 # 2SA1156 2SB1011 2SB942A

2SB942

Abstract: 2SD1267 transistor 2sd1267
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB942 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.5V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1267 APPLICATIONS ·Designed for low-frequency power amplifications.

2SB0942

Abstract: 2SB0942A 2SB942 2SB942A 2SD1267 2SD1267A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 10.0±0.2 4.2±0.2 M Di ain sc te

2SD1267

Abstract: 2SD1267A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1267 2SD1267A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A

J300B

Abstract: 2SB942 2SB942A 2SD12 2SD1267 2SD1267A 400Collector
Contextual Info: Pow er Tra n sisto rs 2SD1267, 2SD1267A 2SD1267, 2SD 1267A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB942, 2SB942A U nit ! mm 4.4m ax. • Features 2 .9 m a x . • H igh D C cu r re n t ga in I i f e

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A 16.7±0.3 • High forward current transfer ratio hFE which has satisfactory linearity

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5