2SB1240 Search Results

Contextual Info: 2SB124060ML 2SB124060ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB124060ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching

Contextual Info: 2SB124060ML 2SB124060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB124060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø

2SB911M

Abstract: 2SB1240
Contextual Info: h 7 > y Z 5 t / T ransistors 2 S B 9 1 1 M A Q n j O A fl 2SB911M/2SB1240 x , =:e5l * > ' ' 7J l ' 7 ° l ' - J - B P N P y ' j 3 > h 7 > y 7 ^ Power Amp. Epitaxial Planar PNP Silicon Transistors • • ÿHfé-sJ’JÉBI/Dimensions Unit : mm 1) Pc = 1 W

Contextual Info: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1

2SB1240

Abstract: transistor 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Contextual Info: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 zExternal dimensions (Unit : mm) 2SB1182 (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 2.3+0.2 −0.1 C0.5 0.65±0.1 0.75 9.5±0.5

2SB1182

Abstract: 2SB1240 2SD1758 2SD1862
Contextual Info: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1

Contextual Info: 2SB124040ML 2SB124040ML 肖特基二极管芯片 描述 Ø 2SB124040ML是采用硅外延工艺制造的肖特 基二极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；

Contextual Info: 7526^ 40E D ROHM CO LTD OODSSOT b H R H M 2SB911M/2SB1240 h s7 > y Z . $ /Transistors - 1- T~27-2\ 2 S B 2 S B 9 1 1 M 1 2 4 p ° w e r A m p- Epitaxial Planar PNP Silicon Transistors • f t p \jr j£ III/'D im e n s io n s U n it : m m h y

Contextual Info: 2SB124040ML 2SB124040ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB124040ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching

2SB1188

Contextual Info: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 2.3 +0.2 −0.1 9.5±0.5 1.5 0.5±0.1 0.65±0.1 0.75 0.1 0.4 + −0.05

2SB1240

Abstract: 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
Contextual Info: Medium power transistor 32V, 2A 2SB1188 / 2SB1182 / 2SB1240 Dimensions (Unit : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 +0.1 0.4−0.05 0.4±0.1 1.5±0.1 1.5 0.65±0.1 0.75 2.3+0.2 −0.1 0.5±0.1 2.5 (2) C0.5 9.5±0.5 6.5±0.2 5.1+0.2

transistor

Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
Contextual Info: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.

2SD1758

Abstract: 2SB1240 96-217-B24 2SD1055 2SD1919 transistor 257 2SD1227M 2SB1188 2SB911 transistor 2SD1862
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB909M

Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
Contextual Info: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

2SD1862

Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SD1758

Abstract: 2SB1240 2SB1182 2SB1188 2SD1766 2SD1862 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3

d1189f

Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277
Contextual Info: Transistors Medium power Transistor -32V, -2A 2 S B 1 1 8 8 /2 S B 1 1 8 2 /2 S B 1 2 4 0 /2 S B 8 9 1 F / 2 S B 8 2 2 /2 S B 1 2 7 7 /2 S B 9 1 1 M •F e a tu re s 1) ^External dim ensions (Units: m m ) LOW VcE(sat). 2SB1188 VcElsat; = —0 .5 V (Typ.)

mn2510

Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
Contextual Info: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *