2SA1307 Search Results

2SA1307

Abstract: 2SC3299
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1307 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max.)@IC= -3A ·High Switching Speed ·Complement to Type 2SC3299 APPLICATIONS ·Designed for high current switching applications.

2sc3299

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm HIGH CURREN T SW ITCH IN G APPLIC ATIO N S. • • • Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) at Ic = 3A High Speed Switching Time : tgtg = 1.0//s (Typ.) Complementary to 2SA1307

2SA1307

Abstract: 2SC3299
Contextual Info: 2SA1307 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SC3299 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)

2SA1307

Abstract: 2SC3299
Contextual Info: SavantIC Semiconductor Product Specification 2SA1307 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SC3299 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING

Contextual Info: Jbtmi-dondiLckoi ^Ptodutiti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SA1307 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage: VcEfsatr -0.4V(Max.)@lc= -3A

2SC3299

Abstract: 2SA1307
Contextual Info: SavantIC Semiconductor Product Specification 2SC3299 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1307 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING

2SC3299

Contextual Info: 2SC3299 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: JZÍ3.2±Q2 . Low Collector Saturation Voltage : VcE sat =0.4V(Max.) at Ic=3A . High Speed Switching Time : tstg=l.O/is (Typ.) . Complementary to 2SA1307

2SA1307

Abstract: 2SC3299
Contextual Info: JMnic Product Specification 2SA1307 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3299 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN

2sc3299

Abstract: 2SA1307
Contextual Info: Inchange Semiconductor Product Specification 2SC3299 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1307 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications

2sa1307

Abstract: 2sa130 2SC3299
Contextual Info: Inchange Semiconductor Product Specification 2SA1307 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3299 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications

2sa1307

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1307 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCUING APPLICATIONS. FEATURES : . Low Saturation Voltage ; V C E s a C =-0.4V(Max,) at Ic=-3A . High Speed Switching Time : tstg=l.0¿is (Typ .) . Complementary to 2SC3299

2sa1307

Contextual Info: T oshiba -c d i s c r e t ë / o p t o } 9097250 T O S H IB A Tm 7ESa 56 ^ C D IS C R E T E/O P T O 730^ 0^ 5 1 1 '? 2SA1307 SILICON PNP EPITAXIAL TYPE PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. 1CL3MAX. 7.0 3 .2 ± Û 2 A FEATURES: . Low Saturation Voltage

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SB536A

Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
Contextual Info: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

AC188

Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry