2SA130 Search Results

2SA1302

Abstract: Toshiba 2Sa1302
Contextual Info: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL

2SC3297

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1305 POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. 0 3 .2 ± 0.2 FEATURES: Ytfi . Good Linearity of hpg ^ ♦ Complementary to 2SC3297 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC + 0.25

2SA1301 TOSHIBA

Contextual Info: 2SA1301 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm PO W ER AM PLIFIER APPLICATIONS. • 2 0 .SM A X . . 0 3 . 3 ± 0 .2 Complementary to 2SC3280 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. í¡- M A X IM U M RATINGS Ta = 25°C

2SC3296

Abstract: IC vertical lg
Contextual Info: 2SC3296 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm VERTICAL OUTPUT APPLICATIONS. 1 Û3MAX. 03.2±Q2 FEATURES: . Wide Safe Operating Area. . Complementary to 2SA1304. 1.2 + 0.2 5 0.76-0-15 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

2SA1301

Abstract: 2SC3280 2SA1301
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1301 POWER AMPLIFIER APPLICATIONS. Unit in mm 2 & 5 MAX. iZS3.3±aZ FEATURES: . Complementary to 2SC3280 . Recommend for SOW High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C SYMBOL RATING Collector-Base Voltage

2SC3281

Abstract: 100W AUDIO ic AMPLIFIER 2SA1302
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3281 POWER AMPLIFIER APPLICATIONS. Unit in mm i 2 0.5 FEATURES: . Complementary to 2SA1302 MAX . 0 3 .3 ± a s oi —I IQ ' . Recommend for 100W High Flderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta-25 C

2SA1308

Contextual Info: JMnic Product Specification 2SA1308 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol

2SA1306

Abstract: 2SA1306A 2SA1306 2SC3298 2SA1306B 2SC3298 2SC3298A 2SC3298B
Contextual Info: Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

2SA1308

Contextual Info: AOK AOK Semiconductor P roduct Specification 2SA1308 Silicon PNP P o w er Transistors DESCRIPTIO N • W ith TO -220F package • Low collector saturation voltage A PP LIC A TIO N S • H igh current sw itching applications PINNING PIN DESCRIPTION 1 Base 2

2SC3296

Abstract: pnp 500ma 40v 2SA1304
Contextual Info: Inchange Semiconductor Product Specification 2SA1304 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220Fa package ·Complement to type 2SC3296 ·High breakdown voltage APPLICATIONS ·Power amplifier applications ·Vertical output applicatios PINNING

2SA1300

Contextual Info: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)

2SA1300

Contextual Info: TOSHIBA 2SA1300 2 S A 1 300 TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity : hFE (1) = 140-600 (Vqe = - IV, Iq = -0.5A)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE  DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications.  FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)

2SA1302

Abstract: 2SC3281 2SA1302 2SC3281
Contextual Info: SavantIC Semiconductor Product Specification 2SA1302 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SC3281 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

2SC3281

Abstract: 2SC3281 data sheet 2SA1302
Contextual Info: SavantIC Semiconductor Product Specification 2SC3281 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1302 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

2SA1307

Abstract: 2SC3299
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1307 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max.)@IC= -3A ·High Switching Speed ·Complement to Type 2SC3299 APPLICATIONS ·Designed for high current switching applications.

2sa1306

Abstract: 2SA1306 2SC3298 2SA1306A 2SA1306/A Transistor 2SA1306B 2sc3298 circuits 2SC3298 transistor 2SC3298A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B

Contextual Info: 2SA1300 T O SH IB A 2 S A 1 300 TO S H IB A TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity :h F E (l) = 14O~6OO(V0E= - I V , I q = —0.5A)

2SA1300

Contextual Info: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sA1300 transistor

Abstract: 2SA1300
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range

2SA1300

Contextual Info: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR（PNP ） TO—92 FEATURES Power dissipation PCM : 0.75 W （Tamb=25℃） Collector current ICM : -2 A Collector-base voltage V BR CBO : -20 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1309A TRANSISTOR PNP TO-92S FEATURES Power dissipation 1. EMITTER PCM : 0.3 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60