2N7002KDW Search Results

2N7002KDW-GP

Abstract: wistron board JST-CON4-19-GP-U Godzilla
Contextual Info: 5 4 3 2 1 H1 HOLE D 1 D ZZ.0HOLE.XXX 2 5V_S5 R1 100KR2J-1-GP PWRLED# 1 6 2 5 3 4 POWER BTN BOARD 1 2N7002KDW-GP PWRLED_1 U1 2ND = 84.00512.03F R2 LED1 PWRLED#_2 C K 5V_S5 A PWRLED#_3 LED-O-16-GP 1 2 07508-1 REVISION : 07201-1 C 560R2F-GP B B TO M/B CONNECT

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

K27 mOSFET

Abstract: MARKING K27 2N7002KDW LA sot363 2N7002KD k27 sot-363 60V N-Channel Enhancement Mode MOSFET - ESD Protected
Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 • RDS ON , VGS@10V,IDS@500mA=3Ω Unit: inch (mm) 0.054(1.35) 0.045(1.15) • High Density Cell Design For Ultra Low On-Resistance 0.030(0.75) 0.021(0.55) 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology

2N7002KDW

Abstract: 2N7002KD sot363 marking 31 Small Signal MOSFET
Contextual Info: 2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES Low on-resistance Fast switching Speed Low-voltage drive Easily designed drive circuits

K27 SOT-363 MARKING

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) FEATURES 0.087(2.20) 0.078(2.00)

2N7002KDW

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition

Contextual Info: 2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead Pb -Free 1 Features: 2 4 3 SOT-363(SC-88) * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Mechanical Data: *Case: SOT-363, Molded Plastic

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

K2765

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

sot-363 n-channel mosfet

Abstract: K27 SOT-363 MARKING K2765 SOT 363 marking CODE LA 2N7002K k27 sot-363
Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

Dual N-Channel mosfet sot-363

Abstract: sot-363 n-channel mosfet sot-363 Marking G1 marking s1 sot363 2N7002KDW 2N7002DKW SOT363-6 sot-363 marking 20 SOT363 6 SOT-363 mosfet
Contextual Info: 2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead Pb -Free 1 Features: 2 4 3 SOT-363(SC-88) * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V 6 5 4 D2 G1 S1 S2 G2 D1 1 2 3 Mechanical Data: *Case: SOT-363, Molded Plastic

2N7002KDW

Abstract: MosFET
Contextual Info: 2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES      A E Low on-resistance Fast switching Speed Low-voltage drive Easily designed drive circuits

2n7002kdW

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET SOT-363 FEATURES z z z z z High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002KDW N-channel MOSFET SOT-363 FEATURES z z z z z High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability

K0231

Abstract: K0116 2N7002KDW-GP LED1421 2N7002KDW
Contextual Info: 5 4 3 2 MEDIA BOARD High-End 1 REVISION :08544 48.4I204.0SA 2 5V_S0 1 R3 100KR2J-1-GP 2N7002KDW-GP AUDIO_LED_1 R18 D 1 5 2 LED10 2 1 A 4 3 U1 D 2ND = 84.00512.03F LED4 1AUDIO_LED#_3 2 K LED-O-16-GP 560R2F-GP R5 5V_S0 6 A AUDIO_LED#_2 K LED-O-16-GP 560R2F-GP

2N7002KDW-GP

Abstract: 2N7002KDW wistron board 100KR2J-1-GP
Contextual Info: 5 4 3 2 5V_S0 2 TO M/B CONNECT R4 100KR2J-1-GP 1 TPCONN1 26 FINGER PRONT 1 2N7002KDW-GP NUM_LED_1 D 6 1 5 2 4 NUM_LED# 5V_S5 FOR BATFULL,STDBY TP_DATA TP_CLK NUM_LED# CAP_LED# 3 LED3 1 NUM_LED#_3 A NUM_LED#_2 K SATA_LED# STDBY_LED# WLAN_LED# CHARGE_LED# DC_BATFULL#

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

winbond WPCE773

Abstract: g547f2 GAP-CLOSE-PWR WPCE773 jv-71 ISL88731C RT8202A JV71 2204mA BT143
Contextual Info: 5 4 3 2 1 SYSTEM DC/DC 42 ISL62392 INPUTS JV71- M V 5V_S5 6A Block Diagram 3D3V_S5(7A) DCBATOUT 5V_AUX_S5 3D3V_AUX_S5 Project code: 91.4FX01.001 PCB P/N : 48.4FX01.0SA REVISION : 09242 -1 D SMSC Mobile CPU CLK GEN. SYSTEM DC/DC INPUTS 1D5V_S3(12A) 34 DDR2

BCM5784

Abstract: JV50-TR RT8205A RS880 SCD1U16V2KX-3GP SB710 AMD SB710 tps51125 RS880M ICS9LPRS480BKL
Contextual Info: 5 4 3 2 Project code: 91.4FN01.001 PCB P/N : 48.4FN01.001 REVISION : 09230- -1 JV50-TR Block Diagram DDR2 PCB STACKUP 667/800MHz AMD Caspian CPU S1G3 35W 667/800 MHz 16,17 D 1 DDR2 667/800 MHz 16,17 G792 35 IN OUT INPUTS HDMI LAN DY Codec A-Link 4X4 AZALIA

KB3310

Abstract: RTM875N-606-VD-GR KB3310QF RTM875N-606-VD-GRT KB3310QF-B0 WISTRON power sequence RTM875N-606 JMB385 TPS51125 schematic acer lcd backlight inverter
Contextual Info: 5 4 3 2 Eiger Block Diagram 3D3V_S5 23 SYSTEM DC/DC TOP 667/800MHz 667/800/1067MHz@1.05V 15 AGTL+ CPU I/F HDMI DDR Memory I/F DDR2 DIMM2 18 INTEGRATED GRAHPICS 667/800MHz LVDS, CRT I/F PCIex16 13 6,7,8,9,10,11 X4 DMI 400MHz INT.MIC 35 Line In MXM CONN 30 C-Link0

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

DIODE C502

Abstract: WPCE773LA0DG transistor K0392 RT9724GB-GP gfx E3 diode M92-LP winbond wpce773la0dg NC7SB3157P6X-1GP P8022 TPS51125
Contextual Info: 5 4 3 2 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SB REVISION : 08274-1 JM41/JM51 Discrete Block Diagram 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 D UMA LVDS UMA CRT Thermal Sensor Intel CPU CLK GEN. SMSC DIS LVDS

BCM5784

Abstract: WPCE773LA0DG TPAD1 rt8202a Wistron Corporation jv-71 RTS5159 SCD1U25V3ZY-1GP 1D05V ISL88731
Contextual Info: 5 4 3 2 JV71 Block Diagram D Mobile CPU CLK GEN. Penryn ICS9LPRS365B 1 Project code: 91.4FX01.001 PCB P/N : 48.4FX01.0SA REVISION : 09242 -1 5V_AUX_S5 3D3V_AUX_S5 PCB STACKUP TOP L1 EMC2102 GND L2 S L3 S L4 GND L5 SYSTEM DC/DC INPUTS 34 OUTPUTS 1D05V_S0 9A

G9731

Abstract: APW7141 BCM5784 RT8205A JV71 WPC773 jv-71 RT9025-25PSP WISTRON power sequence FDS8884
Contextual Info: 5 4 3 2 Project code: 91.4FP01.001 PCB P/N : 48.4FP02.0SB REVISION : 09243-SB JV71-TR Block Diagram DDR2 PCB STACKUP 667/800MHz AMD Caspian CPU S1G3 35W 667/800 MHz 16,17 D 1 DDR2 667/800 MHz 16,17 G792 34 IN OUT INPUTS HDMI VDDR3 21 DCBATOUT 1D2V_S0(4A)