2N696 Search Results

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

BU 4520

Abstract: 2N6962 TO210AC
Contextual Info: IflE D SILICONIX INC • ÖSS47BS GOISCH? 1 ■ f 2N6962 N-Channel Enhancement Mode Transistor QPL product is in accordance with MIL-S-19500/568 T0-210AC TO-61 Isolated Case TOP VIEW This device contains beryllium oxide PRODUCT SUMMARY ■d V (BRJDSS 100

2n697

Abstract: TRANSISTOR 2n697 2N696 2N697 equivalent 2N697 JAN 2N697S 2N696S
Contextual Info: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1 @ TC = 250C (2)

2N697 JAN

Abstract: 2N697
Contextual Info: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 250C 1 @ TC = 250C (2)

2N696

Contextual Info: 2N696 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.41 (0.016) 0.53 (0.021)

SE 442

Abstract: MARKING M1W 2N696 TRANSISTOR 2n697 MKAC 2N697 RAW MATERIAL INSPECTION procedure 2N697 equivalent 2N697 JAN 2N696 equivalent
Contextual Info: M lL -S -1 9 5 0 0 /9 9 E 31 July 1967 su P e r s e ulng MI L - S - 1 9 5 0 0 /99D 3 D ecem ber MILITARY SPECIFICATION S E M IC O N D U C T O R D E V IC E , T R A N S I S T O R , P I T C H I N G , M E D IU M -P O W E R TYPES 2N696 AND 2N697 T h is s p e c ific a tio n is m a n d a to ry f o r u s e by a ll D e p a r t­

2n1711s

Abstract: 2N2218S 2N2904S 2N4406 2n4890s 2N4404 2N697S 2N1613S 2N2218AS 2N2219AS
Contextual Info: TO-39 NPN METAL TRANSISTORS AM PLIFIER AND SWITCH Device Type 2N696S 2N697S 2N1613S 2N1711S 2N2218S 2N2218AS 2N2219S 2N2219AS Polarity v CEO V CER+ Vdc NPN NPN NPN NPN NPN NPN NPN NPN 40+ 40 + 50+ 50+ 30 40 30 40 lc max. (mA) 500 800 300 800 800 HpE min. @ IC

BCY56

Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

Transistor BC177

Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
Contextual Info: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696

BSY52

Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

N706A

Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
Contextual Info: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696

2N696

Contextual Info: 2N696 NPN Transistor 3.50 Transistors Bipolar Silicon NPN Low-Power Transistors Am. Page 1 of 1 Enter Your Part # Home Part Number: 2N696 Online Store 2N696 Diodes NP N T rans is to r Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: 2N6968+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)400 V(BR)GSS (V)30 I(D) Max. (A)7.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)70 Minimum Operating Temp (øC)

2n697

Abstract: TRANSISTOR 2n697 2N696 2N696S
Contextual Info: TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N696S 2N697 2N697S MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ T A = 250C 1 @ T C = 250C (2)

BCY78

Abstract: 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79
Contextual Info: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696

Transistor BC177

Abstract: 2N3053 ZT87 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
Contextual Info: NPN LOW LEVEL < Type o< CD Max 2N3053 60 Max VcE sat at V ce O U 'C: V mA V mA mA 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c 500 1.5 150 500 1.5 150 1000 0.35 150 Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 15 Continued Min f T at at Pto,

2n2396

Abstract: 2N696 2N2395 TI432
Contextual Info: TYPES 2N2395, 2N2396 N-P-N SILICON TRANSISTORS BU LL E T IN NO. DL-S 646083, OCTO BER 1964 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS Formerly TI432, TI433 • Electrically Similar To 2N696 and 2N697 • Compatible Package For Interfacing with

BC337C

Abstract: bc327c BC338C bc337b 2N1131 2N1132 2N3053 2N4037 2N696 BC107
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 500 1.5 150 15 500 1.5 150 1000 0.35 150 at Continued Min f T at Pto,

2N6964

Contextual Info: SI LICONIX INC lflE D fCTSiRconix JmM incorporataci • Ô254735 0Q1S1GS 7 2N6964 'T-^e -i3 N-Channel Enhancement Mode Transistor QPL product is in accordance with MIL-S-19500/568 T0-210AC TO-61) Isolated Case TOP VIEW This device contains beryllium oxide

BC238B

Abstract: BC547B bcy58 ZT Ferranti 2N1131 2N1132 2N3053 2N4037 2N696 2N697
Contextual Info: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 at Continued Min f T at Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100

Contextual Info: , One. !j C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N696 NPN SILICON TRANSISTOR JEDEC TO-39 CASE MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL VCBO Collector-Base Voltage UNITS

MIL-S-19500

Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Contextual Info: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S