2N6498 Search Results

Contextual Info: £ Z T SGS-THOMSON ^7# 2N6497 2N6498-2N6499 HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The 2N6497/98/99 are silicon multiepitaxial mesa NPN transistors in Jedec TO-220 plastic package particularly intended for switch-mode applications. ABSOLUTE MAXIMUM RATINGS

25A1075

Abstract: 2N6497 2N6498 2N6499
Contextual Info: 2N6497 2N6498 2N6499 cen trai Central semiconductor Corp. Central semiconductor Corp. ♦I NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE 1 4 5 A dam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEM ICONDUCTOR 2N 6497, 2N6498, 2N 6499 types are Silicon NPN Power Transistors

2N6530

Abstract: MJE700T
Contextual Info: Power Transistors TO-220 Case Continued TY P f NO, 1C m MW PNP PD m MAX BVépo BVCtO m VCE(SAT) @ 1C h re (A) m m m MB MAX (V) (A) fT (MHz) Iflffcl mnf MAX 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499 5.0

Contextual Info: Power Transistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499

Contextual Info: 2N6497 2N6498 2N6499 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER

MJE13009

Abstract: MJE-13009 D44C11 Data MJE700T BU406 bu406d BU407D mje13007 mje13009 equivalent MJE800T equivalent
Contextual Info: TO-220 Power Transistors TO-220 Case Continued TO-220FP Full Pak • Fully Isolated Standard TYPE NO. Optional IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 10 75 2.5 2N6530

2N6498

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N6497/D 2N6497 2N6498* High Voltage NPN S ilico n Pow er Tran sistors ’ M otorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line-operated

2N6497

Abstract: N6497 2N6498 2N6499
Contextual Info: HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN 2N6497 2N6498 2N6499 . designed for high voltage inverters,switching regulators and line operated amplifier applications. Boca Semiconductor Corp. BSC FEATURES: * Collector-Emitter Sustaining VoltageVCE0(SUS) = 250 V (Min)-2N6497

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors 'Motorola Proftrrtd Dovtc* 5 AM PERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line-operated

2SA1046

Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated

2N6531B

Abstract: 2N660 2N6587 2N6558S 2N6584
Contextual Info: r S E ME L AB 37E LTD IVIELABil Type No. 2N6497 2N6498 2N6499 2N6500 • 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 op tion "1^ Polarlty HI-REL SCREEN SCREEN SCREEN SCREEN NPN NPN NPN NPN NPN Packa3e VCEO •c cont J> m V' 'Xg. - 6133167 □ □ 0 D D E ci 4

2N6497

Abstract: SAT Line Amplifier transistor 2N6497 300V transistor npn 2a 2N6498 2N6499
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6497/6498/6499 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ·DC Current Gain: hFE= 10-75@IC= 2.5A

Contextual Info: 2N6498 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition)400 V(CE)sat Max. (V)1.25 @I(C) (A) (Test Condition)2.5

2N6497

Abstract: 1N5825 2N6498 MSD6100
Contextual Info: MOTOROLA Order this document by 2N6497/D SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated

045h11

Abstract: bu4060 bu406d BU407D MJE3055T MJE700T
Contextual Info: Pow er Tran sistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ IC hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499

2N6497

Abstract: 2N6499 2N6498
Contextual Info: 2N6497,2N6498,2N6499 NPN ACTIVE-REGION SAFE OPERATING AREA SOA Ic , COLLECTOR CURRENT (Am p) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic- V ce

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc