2N5941 Search Results

Contextual Info: 2N5941 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)65 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0m¥x @V(CBO) (V) (Test Condition)28 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N5941

Abstract: 2N5941T vhf power transistor
Contextual Info: 2N5941T SILICO N NPN VH F POWER TRANSISTOR 40 W P.E.P. S.S.B. T R A N S IS T O R mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o l t a g e . 6 5 V

transistor equivalent table chart

Abstract: 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN282A/D AN282A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Systemizing RF Power Amplifier Design

BD291

Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

transistor KD 503

Abstract: kd 503 transistor MRF466 2N5941 MRF-466
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF466 T h e R F Line 4 0 W P E P NPN SILICON RF POWER TRANSISTOR RF PO W E R T R A N S IS T O R . designed p rim a rily for applications as a hig h -p ow e r a m p lifie r from 2.0 to 30 MHz, in single sideband m obile, m arine and base

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

motorola rf Power Transistor

Abstract: transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849
Contextual Info: Order this document by AN282A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN282A SYSTEMIZING RF POWER AMPLIFIER DESIGN Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF small signal design techniques are: 1. the use of two port parameters, and

2N6367

Abstract: 2N6370 MRF420 2N5070 2N5847 MRF433 MRF432 MRF428 MRF823 2N5942
Contextual Info: RF Transistors and Modules This selection guide contains the preferred registered and non-registered RF parts available. Motorola has selected 18 transistor/module chains from 1.5 to 600 W PEP output. A ll devices are designed, tested and optimized fo r frequency ranges from 2 to 900 MHz. These devices are designed fo r your advanced RF

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

2N5070

Abstract: 2N6370 MRF422 MRF816 2N5942 mrf433 MRF432 2N5941 "2-30 mhz" MRF427
Contextual Info: Device Type ^out Output Power Watts V A GpE Power Gain dB Min. V CC Supply Voltage V olts Package 10 6.2 5.05 12.5 13.6 13.6 249-05 244-04 244.04 J 806-947 MHz, U H F FM T R A N S IS T O R S f M R F816 M RF817 M R F818 I 0.75 2.5 8.0 I J ‘ Controlled " Q " transistor. See EB-19.

2SC3883

Abstract: 2N2250 S2000A 2N2222B 2N2244 STi-812 MRF239 2N2362 STI-801 2N2245
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812

2SC3883

Abstract: MRF-466 STI-801 S01428 STi-812 MRF497 s2000 npn mrf239 trw rf THB94
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 5 A, 2S01398 2S01402 2S01651 2S01655 2SC2791 2SC2793 2SC3214 2S01185 2S01186 SOT723 ~~6~~~0 15 20 2SC3322 SOT41303 SOT41303 SML41304 2SC3060 SOT41304 SOT41304 SML812 ~~t:~;05 25 30 OTS812 OTS812 OTS812

Motorola transistors MRF 947

Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A