2N5942
Abstract: transistor t04 66 transistor T04 T04 transistor S-40W T04 transistor SOT 3p transistor transistor 2N 3055 power transistor 3055 transistor 3055
Contextual Info: 2N5942 SILICON NPN VHF POWER TRANSISTOR 80 W P.E.P. S IN G L E S ID E B O A R D T R A N S IS TO R mechanical data DIA 4 L absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e .65 V
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2n594240pep80pepot-32+10o-66ptransistor t04 66transistor t04t04 transistors-40wt04 transistor sot3p transistortransistor 2n 3055power transistor 3055transistor 3055
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Contextual Info: 2N5942 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)65 I(C) Max. (A)12 Absolute Max. Power Diss. (W)140# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10m¥x @V(CBO) (V) (Test Condition)28 V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Stackpole 57-9322-11
Abstract: EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367
Contextual Info: Order this document by AN593/D MOTOROLA SEMICONDUCTOR 33333 APPLICATION NOTE AN593 BROADBAND LINEAR POWER AMPLIFIERS USING PUSH-PULL TRANSISTORS Prepared by: Helge Granberg RF Circuits Engineering INTRODUCTION Linear power amplifier operation, as used in SSB
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an593/dan593stackpole 57-9322-11eb-27 motorola+82n6368ecom-2989granbergdesign of h. f. wideband power transformersan593 broadband linear power amplifiers using push-pull transistorseb-32 complementary symmetry amplifierindiana general ferrite core2n6367
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varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r
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z1000mz4614mz46271n4099+13m4l3052m4l30561n5158varactor 36zgermaniumhalbleiter index transistorhalbleiter buch2n53472n3054working of reactance modulatorje2955germanium transistor2n3902
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N6367
Abstract: 2N6370 MRF420 2N5070 2N5847 MRF433 MRF432 MRF428 MRF823 2N5942
Contextual Info: RF Transistors and Modules This selection guide contains the preferred registered and non-registered RF parts available. Motorola has selected 18 transistor/module chains from 1.5 to 600 W PEP output. A ll devices are designed, tested and optimized fo r frequency ranges from 2 to 900 MHz. These devices are designed fo r your advanced RF
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wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
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4l30524l3056wiring diagram audio amplifier ic 6283germanium+8transistor shortform datasheet & cross referenceshalbleiter index transistor2n5160 motorolatransistor itt 29071n51592n 5574inverter welder 4 schematicdiagrams de ic lg 8838
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in5388
Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor
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plu300in53882n5161germanium+64m28germanium drift transistor2n50701ns2482n5271inverter welder 4 schematic
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2N5070
Abstract: 2N6370 MRF422 MRF816 2N5942 mrf433 MRF432 2N5941 "2-30 mhz" MRF427
Contextual Info: Device Type ^out Output Power Watts V A GpE Power Gain dB Min. V CC Supply Voltage V olts Package 10 6.2 5.05 12.5 13.6 13.6 249-05 244-04 244.04 J 806-947 MHz, U H F FM T R A N S IS T O R S f M R F816 M RF817 M R F818 I 0.75 2.5 8.0 I J ‘ Controlled " Q " transistor. See EB-19.
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Motorola transistors MRF 947
Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,
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motorola transistors mrf 947motorola hep cross reference2n50702n5591 motorola+6semicon volume 1mrf532transistor equivalents for 2n3866siemens semiconductor manualmicrolab splitter specification sheetpt9797
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1N5160
Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A
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1n50001n50011n50021n5003+141n51491n51501n51531n51551n51581n51591n5160max 6438 geo semiconductors2n6058transistor bf 1752n39022n56961n5788germanium itt
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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