2N5902 Search Results

2N5902 TO-92

Contextual Info: 2N5902 - 2N5909 CALOSIC CORP « E » • 18, 322 Monolithic Dual N-ChannelJFET General Purpose Amplifier ? » Q lUWlV CORPORATION - 'T*zn-zi 2N5902-2N5909 A B S O L U T E MAXIMUM RATINGS (T a = 25°C unless otherwise specified FEATURES • Tight Tracking

2N5902

Contextual Info: N-Channel JFETs Ultra Low Leakage Dual JFETs Operating Conditions fo r these Characteristics By Its Caso Style 2N5902 2N5903 2N5904 2N5905 2N5906 2N5907 2N590S 2N5909 Op. Cond. Iq H G 2 >D <I*A VqS I-2 Vos mV) Max AVgs Drift (ftV /T ) Max •o (PA) Max 10

2N5905

Abstract: 2N5905 equivalent 2N5902 2n5909 2N5903 X2N5904 "DUAL N-Channel JFET" 2N5906 2N5904 2N5908
Contextual Info: 2N5902 - 2N5909 CALOGIC CORP XSE » • 1S1 ,(322 Monolithic Dual N-Channel JFET General Purpose Amplifier a 0003311 ? v U lU Q I t CORPORATION - 'T*Z- -Z~l 2N5902- 2N5909 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) FEATURES • Tight Tracking

3fs1

Abstract: 2n5902-2n5909 2N5906 2N5904 2N5905 2N5908 2N5909 2N5907 2N5902 2N5903
Contextual Info: E SOL I D STATE 01 DE I 3 0 7 5 0 0 1 0 0 1 1 0 0 Ö 1 / - I 2N5902- 2N5909 « Monolithic Dual N-Channel JFET V General Purpose Amplifier S FEATURES ABSOLUTE MAXIMUM RATINGS ^ M Ta =25°C unless otherwise specified Gate-Drain or Gate-Source Voltage (Note 1 ). -40V

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

spice 74ls00

Contextual Info: CircuitMaker for Windows Integrated Schematic Capture and Circuit Simulation User Manual CircuitMaker 6 CircuitMaker PRO Revision C Information in this document is subject to change without notice and does not represent a commitment on the part of MicroCode Engineering. The software described in this document is

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MP833

Abstract: e201 siliconix MPF4118 MPF4117 INTERFET SMP4117 TP3370 MP830 SMP3370 TP4119
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 9t. VGS(Off) Max loss Max CI. Max PD Max (V) (A) Min (S) Max (V) (A) (F) (W) Derate at (WrC) Tope, Max (OC) Package Style N-Chann I JFETs, (Cont'd) 5 10 MPF4117A PN4117 PN4117A PN4117A PN4117A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

NPD5566

Abstract: NPD5564 npd5565 2n3819 replacement jfet selection guide J2N6485 NDF9406 2N5245 replacement 2N5248 nf5102
Contextual Info: NATL SEUICOND 6 5 0 1130 <D •o 3 a c o ■ IB o a> </ {DISCRETE} NATL " S E M I CO N D, 2û DE t S D 1 1 3 D 28C (D ISCR ETE) ào r+- QD35470 35470 D r-j/ ~ (T> r \ i ru oj n cm w r* r*» Is » t CJ Ci 2 j w 2J W 0 > 0 ) 0 ) 0 j 0 ) 0 ) 0 > 0 > 0 ) 0 ) 0 ) 0 ) 0 ) 0 > 0 > 0 ) 0 >

Contextual Info: ÄTFÄtL LO W P O W E R FIELD EFFECT T R A N S IS T O R S ©HUM, [FUTf! Ida»1/ Ida«2 Match Match % <W) YfiV Type Number Case Style (T O -) Geometry BVgas Min (V) Ciss Max (PF) Vgsa(off) Min Max (V) Ids* Yfa Min Max (mA) Min Max (UMhoe) Yia 2 Yo* Vgs‘

Contextual Info: N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION r". Top Contact: > A Aluminum 12,000 017" 0 432mm Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS 017" (0 432mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

2N3958

Abstract: 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3957 2N4082
Contextual Info: ^ [Q [U] ¥ ©ÄTTÄ[L® L O W P O W E R FIE LD EFFEC T T R A N S IS T O R S ®tym KHgMflKML Type Number Case Style (T O -) Geometry EVgss Min (V) Ciss Max (PF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 0.2 0.2 1.0 1.0 1.0 1.0 1.0 0.5

20CHL

Abstract: 2N3452 2N4119 2N4117A 2N4771 2N4119A 2N3452 equivalent 2N5902 2n5909 2N4117
Contextual Info: -Æ iitran [?fô ë (yj<STr ©ÄTTÄIL©« Devices. Inc N -C H A N N E L J U N C T IO N FET CHIP NUMBER [Fsa fN ' " □ CONTACT METALLIZATION Top Contact: > A Aluminum .oir (0.432mm) 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .017" (0.432mm)

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

2N5902

Abstract: 2n5909
Contextual Info: -Jfaiitron Devices, Inc. N-CHANNEL DUAL JUNCTIO N FET CHIP NUMBER i CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum .022" 0.559mm Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 022" _ (0.559mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

2N5906

Contextual Info: NATL National Semiconductor N-Channel JFETs Operating Conditions fo r these Characteristics 2N5906 2N5907 2N5908 2N5909 a Vqs ta D rift O iV /X Max PA) Max Vg* vP Go»« •dss Gom Gf i Gfc (mmho) (pmho) 00 (mmho) (pmho) <mA) (V) Max Min Max Min Max Min Max

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

2N5045

Abstract: 2N5454 DN5566 U444 2N5902 2N5903 2N5196 2N5197 2N5198 2N5199
Contextual Info: sIgnalFET Produci Specifications 7-12 N -Channel Dual JFETs - Gate Min. Max. 2N5196 N 71 0.025 4.0 50 0.7 7.0 1000 — 2N5197 N 71 0.025 4.0 50 0.7 7.0 1000 _ 4.0 50 0.7 7,0 1000 4.0 50 0.7 7.0 1000 2N5198 N 71 2N5199 N 71 0.025 0.025 2N5545 Min. Max. • a

Siliconix JFET Dual

Abstract: U402 dual fet 2N3B19 Siliconix Dual N-Channel JFET FET 2N5459 jfet 2N5198 u402 234S 3n156a 2N5902
Contextual Info: sIgnalFET P r o d u c i S p e c ific a tio n s 7-12 N-Channel Dual JFETs Min. M ax. 0 .0 2 5 4 .0 50 0 .7 7 .0 1000 — 71 0 .0 2 5 4 .0 50 0 .7 7 .0 1000 _ 71 0 .0 2 5 0 .0 2 5 4 .0 50 0 .7 7 ,0 1000 71 4 .0 50 0 .7 7 .0 1000 71 0.1 4 .5 50 0 .5 8 .0 0.1

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility