2N4084
Abstract: 2N4085 2N3922 2N3921 Siliconix Dual N-Channel JFETs
Contextual Info: B d u a l s iliconix n -c h a n n e l JFE T s -1_?_ I X_ • Differential Amplifiers 2N3922 Performance Curves NMR see section 5 aesignea for • • • 2N3921 m o n o lit h ic b en efit s 2N4084 <» Minim um System Error and Calibration 5 m V Offset Maximum 2 N3921
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2n3921t0-712n39222n4084+32n4085vdg-10vsiliconix dual n-channel jfets
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u233
Abstract: 2N5454 UC2138 2N3457 2N5906 2N5908 2N6483 2N5515 uc2147 2N3954
Contextual Info: Type Case Geometry Number Style 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3457 2N3958 2N4082 2N4083 2N4084 2N4085 2N5045 2N5046 2N5047 2N5196 2N5197 2N5198 2N5199 2N5452 2N5453 2N5454 2N5515 2N5516 2N5517 2N5518 2N5519 2N5520 2N5521 2N5522 TO71
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2n39212n39222n39542n3954a+142n39552n3955a2n39562n34572n39582n4082u2332n5454uc21382n59062n59082n64832n5515uc2147
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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2N3819 equivalent
Abstract: MPF111 2N3821-4 2N5045 2N3819 2N3921-2 2N4220-2 2N4223-24 2N5457-9 2N5556-58
Contextual Info: designed fo r B . S ilic o n ix Performance Curves NRL See Section 5 • G eneral Purpose Am plifiers MPF109 n-channel JFET B E N E F IT S • Low Cost ■ Analog Switches • Autom atic Insertion Package TO -92 See Section 7 A B S O L U T E M AXIM UM R A T IN G S 25°C
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2n3819 equivalentmpf1112n3821-42n5045+62n38192n3921-22n4220-22n4223-242n5457-92n5556-58
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2N4303
Abstract: sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302
Contextual Info: si6halFET Product Specifications 7-io N & P-Channel Single JFETs Siliconix N N N P P P 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 _ - _ _ _ _ _ _ _ 45 45 - _ _ - _ 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ 25 75 150 _ 90 60
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p1087p1087-18sd210sd211+16s0212sd213sd214sd215u1897u1897-182n4303sd215 siliconix2n4416 jfetjfetu1898 cross2n43812n4393jfet 2n33302n42672n4302
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KE4416
Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
Contextual Info: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents
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dh3467c2n346714-pino-106+8o-220ke4416st5025se5055cs9013n3055transistor bf 1752n6375
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1n32451n3611gp1n3612gp1n3613gp+161n3614gp1n37251n3957gp1n4001gp1n4002gp1n4003gptca780tfk u 111 btfk u 4614 btfk s 186 ptfk u 217 btfk bp w 41 ntfk bpw 41 ntfk 880tfk 148tdsr 5150 g
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2N5521
Abstract: 2N5562 2N5563
Contextual Info: [PMEHUKgTT ÄTTÄ[L LO W P O W E R FIELD EFFECT T R A N S IS T O R S Case Style Typ« Number (TO - Geometry BVgss Min (V) Ciss Max (pF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 2N3921 2N3922 2N3954 2N3954A 2N3955 71 71 71 71 71 FN3.6
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2n39212n39222n39542n3954a+92n39552n3955a2n39562n39572n39582n40822n55212n55622n5563
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dual fet U235
Abstract: 2N5566 "cross reference" FET 2N5459 2N3824 2N4393 2N3B19 2N5566 U235 jfet 133 2n5452
Contextual Info: N-Channel Dual JFETs 2.5 2.5 2.5 50 50 50 0.5 0.5 0.5 2N5564 N N N N N N N 71 71 71 78 78 78 99 0.1 0.1 0.1 0.1 0.1 0.1 0.15 3.0 3.0 3.0 5.0 5.0 5.0 4.0 40 40 40 25 2000 2000 2000 - 5.0 5.0 5.0 7.0 7.0 5.0 12 24 30 30 30 40 40 40 30 7500 7500 7500 5000 5000
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2n5564n55652n39552n4339+132n55462n43402093mdual fet u2352n5566 "cross referencefet 2n54592n38242n43932n3b192n5566u235jfet 1332n5452
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2n3819 equivalent ic
Abstract: 2N5045-7 2N5045 2N3819 equivalent MPF111 equivalent U401-6 2n4220 2N3821-4 2N3921-2 2N4084-5
Contextual Info: monolithic dual n-channel JFET S NNR BACKS'0€ JUNCTION ISOLATED Siliconix designed f o r . . . • FE T Input Amplifiers B E N E FIT S : ■ Low and Medium Frequency Amplifiers • ■ Impedance Converters ■ Precision instrumentation Amplifiers M inim um System Error and Calibra
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10mv/2n3921-22n4084-52n5045-7+10u401-62n4085chp2n5046chp-47chpu403chp-06chp2n3819 equivalent ic2n50452n3819 equivalentmpf111 equivalent2n42202n3821-4
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2N3819 equivalent
Abstract: 2n3819 2n4222 to 92 2N5045 Siliconix JFET Dual
Contextual Info: 2N4222A 2N4222 2N4221A 2N4221 2N4220A 2N4220 Siliconix designed for . . . • ■ ■ ■ Performance Curves NRL See Section 5 Small-Signal Amplifiers VHF Amplifiers Oscillators M ixers BEN EFITS • High Gain • Low Receiver Noise Figure •A B S O LU TE M A X IM U M R A TIN G S 25°C
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2n3819 equivalent2n38192n4222 to 922n5045+1siliconix jfet dual
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700FX
Abstract: 2N3921 2N4084-5 J401 2N3921 equivalent 2N3921-2 2N3922 2N4084 2N4085 FET package TO-71
Contextual Info: n o n o - c h a l i t h n n e D iffe r e n tia l d l J u F a E T l s s X _ f o r • • ilic o n ix P e rfo rm a n c e C u rv e s N s e e s e c tio n 5 • A m p lifie r s MR 2N3922 - 1 _ ? _I a e s i g n e a • i c 2N 3921 B m b e n e f it s
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2n3921t0-71200tia700fx+82n4084-5j4012n3921 equivalent2n3921-22n39222n40842n4085fet package to-71
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2N3958
Abstract: 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3957 2N4082
Contextual Info: ^ [Q [U] ¥ ©ÄTTÄ[L® L O W P O W E R FIE LD EFFEC T T R A N S IS T O R S ®tym KHgMflKML Type Number Case Style (T O -) Geometry EVgss Min (V) Ciss Max (PF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 0.2 0.2 1.0 1.0 1.0 1.0 1.0 0.5
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2n39212n39222n39542n3954a+102n39552n3955asdf506sdf507sdf508sdf5092n39582n39562n39572n4082
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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ls422ls423ls424ls425+15ls426ls832ls833ls4391ls5911e112 jfetsiliconix e412npd5564jfet e300npd5566data sheet of fet bfw10e402 dual jfete430 jfete310 jfet nnpd5565
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IN5314
Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)
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uc4250uc42500mil-std-883c19s00/+152n7109sdf8200fmn35sdf8201fmnz35sdf8202in5314in5309in52862n51632nb906in5313u1897e2n3456in5297
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2NB906
Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style
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uc4250uc4250cmil-std-883c2n2609+162n38212n38222n38232n48562n48572n48s82nb906in53132nb90in5286in5296solitrondevicesin5302in5287in53062n5902 to-92
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2N3819 equivalent
Abstract: 2N5045 2N3819 2N3821-4 2N3921-2 2N4084-5 2N4220-2 2N4223-24 2N5457-9 2N5556-58
Contextual Info: MPFl 11 n-channel JFET designed fo r B . Siliconix Perform ance Curves NRL See Section 5 • General Purpose Amplifiers ■ Analog Switches B EN EFITS • Low Cost • Automatic Insertion Package TO -92 See Section 7 ABSOLUTE M A X IM U M RA TIN G S 25°C
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2n3819 equivalent2n50452n38192n3821-4+62n3921-22n4084-52n4220-22n4223-242n5457-92n5556-58
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DN5565
Abstract: DN5564 2N5047 2N5566 2N5911 DN5567 U412 2N5045 2N5564 2N5912
Contextual Info: N-Channel Dual JFETs 2.5 2.5 2.5 50 50 50 0.5 0.5 0.5 2N5564 N N N N N N N 71 71 71 78 78 78 99 0.1 0.1 0.1 0.1 0.1 0.1 0.15 3.0 3.0 3.0 5.0 5.0 5.0 4.0 40 40 40 25 2000 2000 2000 - 5.0 5.0 5.0 7.0 7.0 5.0 12 24 30 30 30 40 40 40 30 7500 7500 7500 5000 5000
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2n5564n556512dn5565dn5566+9dn5567dn5565dn55642n50472n55662n5911u4122n50452n5912
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2N5561
Abstract: 2N5562 2N5563 2N5045 2N3921 2N3922 2N3934 2N3935 2N3954 2N3954A
Contextual Info: i T " - *• 7 - ^ r SEMICONDUCTORS INC CHE D | 013tbSD □□□□SÖT 7 | "J" Type Field Effect Transistors OPERATING CONDITIONS FOR THESE CHARACTERISTICS OP. CHAR. IV q s I - 2 1 D R IFT /uV/'C Vos (mV) AV q s Max Max •g (pA) Max Gf* fjrnhos Min Max
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ivqsi-212n39212n39222n3934+92n3954-62n39352n3954a2n39542n3955a2n55612n55622n55632n5045
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j201 jfet
Abstract: 2N4303 J201 Replacement fet cross reference FET J202 2N4381 2N3966 2N3909 J-FET 2N4393
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z
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2n38212n38222n42202n4221+142n42222n54572n41392n4861aj201 jfet2n4303j201 replacementfet cross referencefet j2022n43812n39662n3909j-fet2n4393
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2N5045
Abstract: 2N5454 DN5566 U444 2N5902 2N5903 2N5196 2N5197 2N5198 2N5199
Contextual Info: sIgnalFET Produci Specifications 7-12 N -Channel Dual JFETs - Gate Min. Max. 2N5196 N 71 0.025 4.0 50 0.7 7.0 1000 — 2N5197 N 71 0.025 4.0 50 0.7 7.0 1000 _ 4.0 50 0.7 7,0 1000 4.0 50 0.7 7.0 1000 2N5198 N 71 2N5199 N 71 0.025 0.025 2N5545 Min. Max. • a
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2n51962n51972n51982n5199+102n55452n55462n55472n59022n59032n59042n50452n5454dn5566u444
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J201 Replacement
Abstract: fet cross reference 2N3B19 j201 Cross Reference 2n4381 JFET 2N4302 CROSS REFERENCE 2n6661 2N4393 fet 2N4304
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z
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2n38212n38222n42202n4221+152n42222n54572n39552n43392n5546j201 replacementfet cross reference2n3b19j201 cross reference2n4381jfet2n4302cross reference 2n66612n4393fet 2n4304
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SU2369
Abstract: SU2080 2N4085 SU2365 2N3921 2N3922 2N4084 SU2081
Contextual Info: [ ^ M © ? ©ÄTFÄ[L© Devices. Inc N -C H A N N E L D U A L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .038" (0.965mm Die Size: Pad Sise: It is advisable that:
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965mm0254mmsu2369su2080+62n4085su23652n39212n39222n4084su2081
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