2N3677 Search Results

2N5066

Abstract: TELEDYNE CRYSTALONICS 2N3677 veam
Contextual Info: U L T R A LOWrEC sat 2N3677 2N5066 SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS G E O M E T R Y 292, PG. 57 (2N3677) G E O M E T R Y 414, PG. 57 (2N5066) • • • • • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN) rEc ^sat* 4 Ohms TYPICAL

Contextual Info: U nc, 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 301 376-2922 (212)227-6005 FAX: (201) 376-8960 ULTRA LOWr.c (sat) SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS COMPLEMENTARY TYPES 2N3677 (PNP) 2N5068INPN) rgc ''»<> 4 Ohms TYPICAL

Contextual Info: ULTRA LOWree sat 2N3677 2N5066 SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS GEOMETRY 2*2, (2N3677) GEOMETRY 485, (2NS066) • • • • • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN) iec ,” tl 4 Ohms TYPICAL LOW G * LOW LEAKAGE HIGH BVebo

2N3677

Abstract: 2N5066 CDA11
Contextual Info: D /A SWITCHiES These circuits are designed specifically fo r D /A conversion, where low and stable Ron is of primary concern. Most o f these circuits use our own epitaxial junction bipolar transistors such as the 2N3677 and 2N5066. In addition to low Ron , most have an offset voltage of under 1 m illivolt. A ll of our circuits w ill

Contextual Info: 2N3677 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N5066

Contextual Info: aN sC RYSTALO N IC SsssO W ebsite: W W W .Crystalonics.com Phone: 631:981-6140 Fax:(631-585-4858) * S e e price list for o rd e rin g inform ation U L T R A LOW rcc (sat) P N P / N P N S W IT C H IN G T R A N S I S T O R S 2N3677 2N3677UB 2N5066 2N5066UB

2N5066

Abstract: T37Z 2N3677
Contextual Info: TELEDYNE COMPONENTS 5ÖE D fiW b G S O GD bS äT T ULTRA LOWree sat 2N 3677 SILICON EPITA XIA L JUNCTION PNP/NPN SWITCHING TRANSISTORS 2N5066 GEOMETRY 292, (2N3677) GEOMETRY 485, (2N5066) T - 3 7 - 2 Ì jr-sr-Li • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN)

2N5066

Abstract: 2N3677/2N5066
Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 ULTRA LOWfEc sat SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS USA • • • • • TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3677 2N5066 COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

CAG48

Abstract: SPDT FETs Crystalonics 2N5066 dpdt mechanical relays 3v 2N3677 CAG30 CDA28 CDA29 CS4R101A
Contextual Info: H IG H L IG H T S CH-2 These circuits represent the best of combined Monolithic and Hybrid technology. Each uses a specially de­ signed Crystalonics monolithic circuit which interfaces with standard logic and drives discrete chip switching trarrsistors. While the monolithic circuit keeps size and cost to a minimum, the discrete output

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

Crystalonics

Abstract: CAG48 2N3677 CAG30 CDA28 CDA29 CS4R101A CSH101
Contextual Info: HIGHLIGHTS C H -2 These circuits represent the best o f com bined M o n o lith ic and H yb rid technology. Each uses a specially de­ signed Crystalonics m o n o lith ic c irc u it w hich interfaces w ith standard logic and drives discrete chip switching trarrsistors. W hile the m o n o lith ic c irc u it keeps size and cost to a m in im u m , the discrete o u tp u t

1040B

Abstract: 2N3910 svt6062 2n5100
Contextual Info: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BC352* CSR

Abstract: csr BC352 2N936 Emihus 2N828 MPS5143 Bc352 LOW-POWER SILICON PNP 2N850 transitron
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index