2N2907ACSM Search Results
2N2907ACSM Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2N2907ACSM | Semelab | HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PA | Original | 16.52KB | 2 | ||
| 2N2907ACSM | Semelab | HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS | Original | 16.69KB | 2 | ||
| 2N2907ACSM-RH | Semelab | High Speed, Medium Power, PNP Switching Transistor Radiation Tested for High Reliability Applications | Original | 87.11KB | 9 |
2N2907ACSM Price and Stock
TT Electronics Power and Hybrid / Semelab Limited 2N2907ACSM-QR-EBTrans GP BJT PNP 60V 0.6A 3-Pin CLLCC-1 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N2907ACSM-QR-EB | 100 |
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Tt Electronics Plc 2N2907ACSM-QR-B |
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2N2907ACSM-QR-B | 778 |
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Tt Electronics Plc 2N2907ACSM-JQR-BSmall Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N2907ACSM-JQR-B | 767 |
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Tt Electronics Plc 2N2907ACSM-QR-EB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N2907ACSM-QR-EB | 522 |
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Tt Electronics Plc 2N2907ACSMSmall Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N2907ACSM | 481 |
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2N2907ACSM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TST002
Abstract: 11-7114 121-819 2N2907A 2N2907ACSM 2N2907ACSM-RH TST001 101902 2839E
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Original |
2n2907acsm-rh500e-09000e-09000e-08+8 | |
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Contextual Info: Illl = ^ = Illl SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES ( 0.51 ± 0.10 0.02 ± 0 .004 ) |
OCR Scan |
2n2907acsm100mhz150ma | |
2N2907A surface mount
Abstract: 2N2907A PNP Transistor 2N2907A 2N2907ACSM
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Original |
2n2907acsm150ma2n2907a surface mount2n2907a pnp transistor+1 | |
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Contextual Info: mi i tmit i S E M E 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS m e c h a n ic a l d a t a Dimensions in mm inches FEATURES 0.51 ± 0.10 (0.02 ± 0.0 04) |
OCR Scan |
2n2907acsm2n2907a600ma | |
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Contextual Info: mi SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.51 *0.10 (0.02 * 0.004) • SILICON PLANAR EPITAXIAL PNP |
OCR Scan |
2n2907acsm100mhz150ma | |
LE17Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated |
Original |
2n2907acsm4r-600ma500mwmo-041ba+1 | |
2N2907ACSM
Abstract: LE17
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Original |
2n2907acsm-600ma500mwle17 | |
2N2907A LCC3Contextual Info: 2N2907ACSM4R HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 1.40 ± 0.15 |
Original |
2n2907acsm4r150ma2n2907a lcc3 | |
LCC1 weight
Abstract: 2N2907A LCC3 2N2907ACSM-JQR-B 2N2907ACSM LCC3 weight
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Original |
2n2907acsm2n2907acsm42n2907acsm4-jqr-b2n2907acsmcecc+5 | |
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Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated |
Original |
2n2907acsm-600ma500mw08mw/ | |
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Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4 • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated |
Original |
2n2907acsm4-600ma500mw08mw/+1 | |
2N2907A surface mountContextual Info: 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad. |
Original |
2n2907acsmot23apacitance150ma2n2907a surface mount | |
2N2907A
Abstract: 2N2907ACSM
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Original |
2n2907acsm150ma2n2907a | |
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Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM4R • Low Power, High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated |
Original |
2n2907acsm4r-600ma500mw08mw/+2 | |
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MO-04
Abstract: 2N2907ACSM4 LE17
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Original |
2n2907acsm4-600ma500mwmo-041ba+2 | |
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Contextual Info: büE D m 0133167 0000520 ^33 « S M L B 'T ' 3S-\> SEMELAB PLC SEMELAB 2N2907ACSM HIGH SPEED, MEDIUM POWER, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e n s io n sin m m |
OCR Scan |
2n2907acsm | |
2n3866s
Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
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OCR Scan |
byv34-300smbyv34-400asmbyv34--400rsm+15 | |
IRF5402
Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
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OCR Scan |
bzx55c5v6csmt0220sm2n2222csm2n2907csm+16 | |
2N3810 LCC
Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
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Original |
fm36235m/0103/cecc/uk1360/mvqc-03-003050+13 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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Original |
2c4152c4252c4442c746+16 | |
BSW68
Abstract: 2N3055 mj2955 50004 2N3440 ST bdy90 BSV64 BSW68A
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OCR Scan |
t0220sm0220mbss44bsv64+11 | |
2N3053 NPN transistor
Abstract: 2n2917 dual transistor 2N2906AQF 2N2907AQF 2N2917
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OCR Scan |
250mw80min30min40min+8 | |
MCA0616/1
Abstract: T-120-01B Skynet Electronic
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Original |
mil-prf-19500qr216qr217fm36235+9 | |
2N2907A2
Abstract: 2N2907 NPN Transistor TRANSISTOR NPN 60V 2N2905A-JQR-B 2n2907 pnp bipolar transistor 2N2905 2n2907 TRANSISTOR PNP 2N3036L 2n2907am
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Original |
2n29052n2905a2n2905acsm2n2905a-jqr-b+11 | |