260CA Search Results

Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,

elna 50v

Contextual Info: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G

Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA and CDMA2000

A211801E

Abstract: 200B103 LM7805 PTFA211801E
Contextual Info: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

roger

Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
Contextual Info: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and

PTF141501E

Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
Contextual Info: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital

MPLAD30KP14A

Abstract: MPLAD30KP30CA 260CA MPLAD15KP MPLAD30KP400CA
Contextual Info: MPLAD30KP14A – MPLAD30KP400CA Available SURFACE MOUNT 30,000 WATT TRANSIENT VOLTAGE SUPPRESSOR High-Reliability screening available in reference to MIL-PRF-19500 DESCRIPTION These high power 30 kW rated transient voltage suppressors in a surface mount package are

Contextual Info: MPLAD30KP14A – MPLAD30KP400CA Available Surface Mount 30,000 Watt Transient Voltage Suppressor High-Reliability screening available in reference to MIL-PRF-19500 DESCRIPTION These high power 30 kW rated transient voltage suppressors in a surface mount package are

PTF191601E

Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b
Contextual Info: PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the

Contextual Info: MPLAD30KP14A – MPLAD30KP400CA Available Surface Mount 30,000 Watt Transient Voltage Suppressor High-Reliability screening available in reference to MIL-PRF-19500 DESCRIPTION These high power 30 kW rated transient voltage suppressors in a surface mount package are

PTF211301E

Contextual Info: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

ALT230

Contextual Info: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA and CDMA2000 operation

PTF082001E

Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
Contextual Info: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest

Contextual Info: KEMET Part Number: C0201C470J3GACTU C0201C470J3GAC7867 Capacitor, ceramic, 47 pF, +/-5% Tol, 25V, C0G, 0201 General Information Manufacturer: KEMET Electrical Specifications Capacitance: 47 pF Chip Size: 0201 Voltage: 25V Temperature Coefficient: C0G Tolerance:

LM7805

Abstract: PTFA212001E
Contextual Info: PTFA212001E PTFA212001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz Description The PTFA212001E and PTFA212001F are thermally-enhanced, 200-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

PTFA261301E

Contextual Info: Preliminary PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz PTFA261301E* Package 30260 Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications.

A211801E

Abstract: PTFA211801E
Contextual Info: PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

SCHEMATIC DIAGRAM 3.3kv

Abstract: BCP56 LM7805 PTF041501E PTF041501F ceramic capacitor 103 z 21
Contextual Info: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characaterized for CDMA and

PTF141501A

Abstract: LM7805 smd P02B LM7805 Application Notes on LM7805 lm7805 p transistor smd marking ND smd transistor marking ND transistor 45 f 122 smd transistor bcp56
Contextual Info: PTF141501A High Power RF LDMOS Field Effect Transistor 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501A is a150-watt, GOLDMOS FET intended for DAB applications. The device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Full gold metallization ensures excellent

p 1703 bds

Contextual Info: PTFA082201E PTFA082201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are thermally-enhanced, 220-watt, internally-matched GOLDMOS FETs intended for CDMA and WCDMA applications. They are characaterized for two-carrier

Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced

Contextual Info: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are thermally-enhanced, 200-watt, internally-matched GOLDMOS FETs intended for WCDMA and CDMA applications. They are characaterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.

PTF211301F

Abstract: PTF211301E BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd
Contextual Info: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier

MPLAD30KP

Contextual Info: MPLAD30KP14A – MPLAD30KP400CA Available SURFACE MOUNT 30,000 WATT TRANSIENT VOLTAGE SUPPRESSOR High-Reliability screening available in reference to MIL-PRF-19500 DESCRIPTION These high power 30 kW rated transient voltage suppressors in a surface mount package are