PTF141501E Search Results

PTF141501E Datasheets (3)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTF141501E		Infineon Technologies	1450 MHz to 1500 MHz; Package: PG: H-30260-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,450.0 - 1,500.0 MHz; P_1dB (typ): 150.0 W; Supply Voltage: 32.0 V;	Original	PDF	286.98KB	12
PTF141501E V1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 150W H-30260-2	Original	PDF	287.67KB
PTF141501EV1		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 150W H-30260-2	Original	PDF		12

PTF141501E Price and Stock

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Infineon Technologies AG


Infineon Technologies AG PTF141501EV1XWSA1 - Trays (Alt: PTF141501EV1XWSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PTF141501EV1XWSA1	Tray				1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG PTF141501EV1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	PTF141501EV1		5,183			1 - 10 - 100 - 1000 - 10000 -	Get Quote

PTF141501E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PTF141501E Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56 Contextual Info: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital	Original	ptf141501e ptf141501f 150-watt ptf141501a +8lm7805 smd philips smd 1206 resistor transistor smd marking nd lm7805 smd lm7805 lm7805 m smd schematic diagram 3.3kv bcp56	PDF
LM7805 Abstract: PTF141501E Contextual Info: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz Description The PTF141501E and PTF141501F are thermally-enhanced 150-watt, GOLDMOS FETs intended for DAB applications. The devices are characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz	Original	ptf141501e ptf141501f 150-watt lm7805	PDF
A 673 C2 transistor Abstract: LM7805 smd smd lm7805 Application Notes on LM7805 smd transistor marking l6 transistor SMD LOA SCHEMATIC DIAGRAM 3.3kv transistor smd marking ND BCP56 P13KGCT-ND Contextual Info: PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging	Original	ptf141501e 150-watt h-30260-2 a 673 c2 transistor +9lm7805 smd smd lm7805 application notes on lm7805 smd transistor marking l6 transistor smd loa schematic diagram 3.3kv transistor smd marking nd bcp56 p13kgct-nd	PDF
smd transistor A006 Contextual Info: PTF141501E Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E is a 150-watt, GOLDMOS FET intended for DAB applications. This device is characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging	Original	ptf141501e 150-watt h-30260-2 smd transistor a006	PDF
PTFB182503FL Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production	Original	ptfa041501e ptfa041501f pg-dso-20-63 pg-rfp-10 +15h-33265-8 h-34265-8 h-30260-2 h-36260-2 h-30265-2 h-30248-2 ptfb182503fl ptfa08150 rf power transistors ptfa081501e ptfa092213el ptfb ptfa211801e ptfb182503 ptfb192503	PDF