PTFA261301F Search Results

PTFA261301F Datasheets (3)

Filter by Manufacturer

Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTFA261301F		Infineon Technologies	2400 MHz to 2700 MHz; Package: PG: H-31260-2; Flange Type: Earless; Matching: I/O; Frequency Band: 2,620.0 - 2,680.0 MHz; P_1dB (typ): 130.0 W; Supply Voltage: 28.0 V;	Original	PDF	248.78KB	12
PTFA261301FV1		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 130W H-31260-2	Original	PDF		12
PTFA261301F V1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 130W H-31260-2	Original	PDF	250.61KB

PTFA261301F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
elna 50v Contextual Info: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G	Original	ptfa261301e ptfa261301f 130-watt cdma2000 +3h-30260-2 h-31260-2 elna 50v	PDF
ALT230 Contextual Info: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA and CDMA2000 operation	Original	ptfa261301e ptfa261301f 130-watt cdma2000 +1alt230	PDF
PTFA261301E Contextual Info: Preliminary PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz PTFA261301E* Package 30260 Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications.	Original	ptfa261301e ptfa261301f 130-watt cdma2000	PDF
BCP56 Abstract: LM7805 PTFA261301E PTFA261301F IM325 130-watt PD449 2680 marking Contextual Info: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G	Original	ptfa261301e ptfa261301f 130-watt cdma2000 +7h-30260-2 h-31260-2 bcp56 lm7805 im325 pd449 2680 marking	PDF
PTFA261301E Abstract: 520004 Contextual Info: Preliminary PTFA261301E PTFA261301F Thermally Enhanced High Power RF LDMOS FETs 130 W, 2.62–2.68 GHz Description Features The PTFA261301E and PTFA261301F are thermally enhanced 130–watt, internally matched GOLDMOS FETs intended for ultra-linear applications.	Original	ptfa261301e ptfa261301f 520004	PDF
PG-DSO-20 Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test	Original	pg-dso-20 pg-rfp-10 h-34265-8 h-33265-8 +15h-30248-2 h-36248-2 h-33288-2 h-31248-2 h-37248-2 h-34288-2 a1807 ptfa211801e h-32259-2 lt 860 ptfa071701gl ptfa072401fl 1800 ldmos 1805-1880 ptma210452m	PDF
PTFB182503FL Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production	Original	ptfa041501e ptfa041501f pg-dso-20-63 pg-rfp-10 +15h-33265-8 h-34265-8 h-30260-2 h-36260-2 h-30265-2 h-30248-2 ptfb182503fl ptfa08150 rf power transistors ptfa081501e ptfa092213el ptfb ptfa211801e ptfb182503 ptfb192503	PDF