PTFA192001F Search Results

PTFA192001F Datasheets (5)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTFA192001F		Infineon Technologies	1800 MHz to 2000 MHz; Package: PG:H-37260-2; Flange Type: Earless; Matching: I/O; Frequency Band: 1,930.0 - 1,990.0 MHz; P_1dB (typ): 200.0 W; Supply Voltage: 30.0 V	Original	PDF	278.94KB	11
PTFA192001FV4		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 200W H-37260-2	Original	PDF		11
PTFA192001FV4FWSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 200W H-37260-2	Original	PDF	445.44KB
PTFA192001F V4 R250		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 200W H-37260-2	Original	PDF	445.44KB
PTFA192001FV4R250		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 200W H-37260-2	Original	PDF		11

PTFA192001F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,	Original	ptfa192001e ptfa192001f 200-watt h-36260-2 +1h-37260-2	PDF
ptfa192001e Abstract: PTFA192001E V4 LM7805 PTFA192001F RO4350 PCS3475CT-ND Contextual Info: PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications	Original	ptfa192001e ptfa192001f 200-watt h-36260-2 +5h-37260-2 ptfa192001e v4 lm7805 ro4350 pcs3475ct-nd	PDF
Contextual Info: PTFA192001E PTFA192001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are thermally-enhanced, 200-watt, internally-matched GOLDMOS FETs intended for WCDMA and CDMA applications. They are characaterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.	Original	ptfa192001e ptfa192001f 200-watt h-30260-2 +1h-31260-2	PDF
Contextual Info: PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications	Original	ptfa192001e ptfa192001f 200-watt h-36260-2 +1h-37260-2	PDF
PTFB090901EA Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB	Original	ptva093002tc 960mhz 758mhz pxac201602fc +62025mhz h-49248h-4 h-37248-4 400mhz 2700mhz ptfb090901ea	PDF
PTFA142401EL Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	ptfa041501e ptfa041501f ptfa070601e pg-dso-20-63 +13pg-son-10 h-33265-8 h-34265-8 h-36248-2 h-37248-2 h-36260-2 ptfa142401el ptfa070601f ptfa071701e ptfa071701f ptfa072401el ptfa072401fl ptfa080551e	PDF
PTFA041501E Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly	Original	ptfa041501e ptfa041501f ptfa070601e 725-7452fl +13pg-dso-20-63 pg-son-10 h-33265-8 h-34265-8 h-36248-2 h-37248-2 ptfa220121m ptfb241402f ptfa070601f ptfa071701e ptfa071701f ptfa072401el ptfa072401fl	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original	bgu7073 bgu7072 infineon power management selection guide 2011 toshiba car audio catalog 2015 +6bap50-03 spice model bb 804 varicap diode mosfet toshiba 2015 rf manual 19th edition rf manual blf188	PDF
PTFB182503FL Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production	Original	ptfa041501e ptfa041501f pg-dso-20-63 pg-rfp-10 +15h-33265-8 h-34265-8 h-30260-2 h-36260-2 h-30265-2 h-30248-2 ptfb182503fl ptfa08150 rf power transistors ptfa081501e ptfa092213el ptfb ptfa211801e ptfb182503 ptfb192503	PDF