PTF191601F Search Results

PTF191601F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PTF191601E Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b Contextual Info: PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the	Original	ptf191601e ptf191601f 160-watt bcp56 +2lm7805 atc 4r7 capacitor 100b	PDF

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PTF191601E

Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b
Contextual Info: PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the

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ptf191601e ptf191601f 160-watt bcp56 +2

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