250FJA Search Results

8832

Contextual Info: ¡5 h a r r HM-QQ32 i s 32K x 8 Asynchronous CMOS Static RAM Module Features • • • • • • • • • • • • • Pinout TOP VIEW Full CMOS Six Transistor Memory Cell Low Standby Supply C u r re n t. 250fjA Low Operating Supply C u r r e n t. 15mA

Contextual Info: International I R Rectifier pd-9.h52d IRG4BC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve

Contextual Info: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure

Contextual Info: • Low Cost ■ 12-Bit Serial Sampling ADC ■ 8-Pin NSOIC Plastic Package ■ Low Power including Automatic Shutdown: 250pA ■ Programmable Input Configuration: Full differential or 2 channel single-ended ■ Single Suppply 3.0V to 5.5V operation ■ Half Duplex Digital Serial Interface

F9222

Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
Contextual Info: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance

irf9540

Abstract: l 9143 irfp9140 IRFP9143 IRF9540 mosfet IRF9541 9142 ha 9141 9143 15a 50v p-channel mosfet
Contextual Info: SAMSUNG ELSTC^ONTCS IN C h4 E D WÊ 7 T b m M 2 IK I-y ö 4 Ü /»ö4 1 /y ö 4 2 /9 5 4 3 IRFP9140/914179142/9143 FEATURES • • • • • • • □□122bG GG E • SI1GK P-CHANNEL POWER MOSFETS TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times

IRF820

Abstract: IRF820.821 IRF822
Contextual Info: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • Low er R ds <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRf 444 MOSFET

Abstract: DIODE Z32 irf9z34 IRF9Z30 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRF9Z35 IRf 444
Contextual Info: SAMSUNG ELECTRONICS INC fc^E D • 7^4142 IRF9Z34/Z35 IRF9Z30/Z32 □ □ 1 2 2 Iìc T77 M S U G K P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <on > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: D r w C .3 7 6 YA H ADVANCE INFORMATION Radiation Hardened Regulating Pulse Width Modulator Features Applications • Com plete PWM Power Control Circuitry • Positive Switching Regulators • • • • • • • • • Frequency Adjustable t o .290KHZ

K 3911

Abstract: n3220
Contextual Info: ' ZETEX SEMICONDUCTORS U U. I *aa •iSD D ^70570 0 0 0 5 7 1 e 3 ■ ZETB 95D 0 5 7 1 9 T-39-11 N-channel enhancement mode vertical DMOS FET ZV N 3220 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

IRF1630

Abstract: irf1630g IRF163 1RF16 59-A IRFI630G 9652A
Contextual Info: PD-9.652A International SS Rectifier IRFI630G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance ^DSS - 200V ^DS on = 0 - 4 0 0 lD = 5.9A

CHN 535

Contextual Info: Single Output UNR Series Non-Isolated, 3.3V 8-40 Watt, DC/DC Converters Features N ew lo w -vo ltag e m ic ro p ro c e s s o r a nd m e m o ry ch ip s are d rivin g th e m ig ra tio n from ce n tra lize d to d istrib u te d p o w e r p ro ce ssin g in m od e rn te le c o m m u n ic a tio n and

YTF820

Contextual Info: YTF820 FELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE {»-MOS II INDUSTRIAL APPLICATIONS Unit in m m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX. . 03.6 ±0.2 C HOPPER REGULATOR, DC-DC C O NVERTER AND MOTOR DRIVE APPLICATIONS.

Supersot6

Abstract: ld32a NDC651N 55sc
Contextual Info: National • Semiconductor" March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description ■ 3.2A, 30V. Ft,*, , = 0.09£1 @ VGS = 4.5V R d sio n i = 0 .0 6 0 @ VGS = 10V. These N-Channel logic level enhancement mode

D-12

Abstract: IRGBC20U 12FFL
Contextual Info: P D - 9.681 A International S Rectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency {over 5kHz See Fig. 1 for Current vs. Frequency curve

diode 4j

Contextual Info: P D - 9 .1 4 1 0 A International IOR Rectifier IRFP044N H E X F E T Pow er M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55 V ^DS on = 0 .0 2 0 Q

MOSFET 50V 100A

Contextual Info: SSW/I4N60A Advanced Power MOSFET FEATURES b v dss - 600 V 2.5 Q • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA (Max.)

IRF510

Abstract: IRF510 MOSFET IRF512 irf510 ir 05b diode
Contextual Info: N-CHANNEL POWER MOSFETS IRF510/511/512/513 FEATURES • • • • • • • Lo w er R ds on Im proved in d u c tive ru g g ed n es s F ast sw itch in g tim e s R u g g ed p o lysilico n g a te cell s tru ctu re Lo w er in p u t c a p a c ita n c e E x te n d e d sa fe o p e ra tin g area

pj 68 SMD diode

Abstract: smd diode code pj 70 smd diode code pj smd diode code pj 50 smd diode code pj 24 st smd diode marking code smd marking code pj smd diode code pj 40 smd diode pj 55 smd diode code pj 65
Contextual Info: PD-9.1006 International S Rectifier IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration HEXFETs from International Rectifier provide the designer

IRF341R

Contextual Info: [2 HARRIS IR F 3 4 0 /3 4 1 /3 4 2 /3 4 3 IR F 340R /341 R /3 4 2 R /343R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 9 1 P a ck a g e F e a tu re s T O -2 0 4 A A BOTTOM VIEW • 10A and 8.3A, 400V - 350V • rDS on = 0.55H and 0 .8 0 ÎÎ

IXTP7N50

Abstract: 7n50r 7N45 7N50 IXTM7N45 IXTM7N50 IXTP7N45
Contextual Info: I X Y S CORP □ I X Y lflE I> • IX T P 7 N 4 5 , S 4bflbS2b OOOQbl4 0 ■ IX T P 7 N 5 0 , IX T M 7 N 4 5 , IX T M 7 N 5 0 7 A M P S , 4 5 0 -5 0 0 V, 0.85Q/1.10S2 M AXIM UM RATINGS 'T '- Z a Parameter Sym. Drain-Source Voltage 1 IXTP7N45 IXTM7N45 IXTP7N50

IRF330

Contextual Info: 7964142 - í « S ^ M S U N G S E M IC O N D U C T O R D E I TTtiMms D D D S i m IN C 9 8 D 0 5114 7 “ D 7 ^ 3 7 -// N-CHANNEL POWER MOSFETS IRF330/331Z332/333 FEATURES • • • • • • • • Low RDS on Improved inductive ruggedness Fast switching times

f15p06

Abstract: TA09833 15A60 15A60V
Contextual Info: in te r r ii RFD15P06, RFD15P06SM, RFP15P06 Data S h e e t J u ly 1999 Features 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs • 15A.60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives