250FJ Search Results

8832

Contextual Info: ¡5 h a r r HM-QQ32 i s 32K x 8 Asynchronous CMOS Static RAM Module Features • • • • • • • • • • • • • Pinout TOP VIEW Full CMOS Six Transistor Memory Cell Low Standby Supply C u r re n t. 250fjA Low Operating Supply C u r r e n t. 15mA

Contextual Info: International I R Rectifier pd-9.h52d IRG4BC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

9904A

Contextual Info: A N A LO G D E V IC E S Monolithic Synchronous Voltage-to-Frequency Converter 1 V - : 'J FEATURES Full-Scale Frequency (Up to 2MHz Set by External System Clock No Critical External Components Required Extremely Low Linearity Error (0.005% max at 100kHz FS, 0.02% max at 2MHz FS)

Contextual Info: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve

Contextual Info: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure

Contextual Info: • Low Cost ■ 12-Bit Serial Sampling ADC ■ 8-Pin NSOIC Plastic Package ■ Low Power including Automatic Shutdown: 250pA ■ Programmable Input Configuration: Full differential or 2 channel single-ended ■ Single Suppply 3.0V to 5.5V operation ■ Half Duplex Digital Serial Interface

F9222

Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
Contextual Info: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance

irf9540

Abstract: l 9143 irfp9140 IRFP9143 IRF9540 mosfet IRF9541 9142 ha 9141 9143 15a 50v p-channel mosfet
Contextual Info: SAMSUNG ELSTC^ONTCS IN C h4 E D WÊ 7 T b m M 2 IK I-y ö 4 Ü /»ö4 1 /y ö 4 2 /9 5 4 3 IRFP9140/914179142/9143 FEATURES • • • • • • • □□122bG GG E • SI1GK P-CHANNEL POWER MOSFETS TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times

IRF820

Abstract: IRF820.821 IRF822
Contextual Info: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • Low er R ds <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

3171S

Contextual Info: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND

IRf 444 MOSFET

Abstract: DIODE Z32 irf9z34 IRF9Z30 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRF9Z35 IRf 444
Contextual Info: SAMSUNG ELECTRONICS INC fc^E D • 7^4142 IRF9Z34/Z35 IRF9Z30/Z32 □ □ 1 2 2 Iìc T77 M S U G K P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <on > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRFI620G

Abstract: irfi620
Contextual Info: PD-9.832 International S Rectifier IRFI620G HEXFET Power M OSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance VDSS = 200V ^DS on - 0 - 8 0 ^ lD - 4.1 A

Contextual Info: D r w C .3 7 6 YA H ADVANCE INFORMATION Radiation Hardened Regulating Pulse Width Modulator Features Applications • Com plete PWM Power Control Circuitry • Positive Switching Regulators • • • • • • • • • Frequency Adjustable t o .290KHZ

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY" TO DEL FOSE INC, AND SHALL NET DE COPIED, REPRDDOCED OR DISCLOSED VITHOOT THE VRITTEN APPROVAL OF DEL FUSE INC, LEDI P E LA R IT Y PIN 13 - PIN 14 + PIN 15 ERPPN - E LECTRIC AL CHARACTERISTICS PIN 16

IRF1630

Abstract: irf1630g IRF163 1RF16 59-A IRFI630G 9652A
Contextual Info: PD-9.652A International SS Rectifier IRFI630G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance ^DSS - 200V ^DS on = 0 - 4 0 0 lD = 5.9A

Diode 224

Abstract: BFC14 DIODE 224#
Contextual Info: BFC14 SEME LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 11 8 (0 4 6 3 ) ^ 2 2 (0 4 8 0 ^ I 9 (0 3 5 0 ) 9 6 (0 3 7 6 Ï- Y ' H ex N u t M 4 (4 places) ii 1- f 4 0 (0 1 5 7 }

Contextual Info: CI RC UI T A S S E M B L Y CORP b^E D • 2133756 D D O n i S T3b « C A C -CD IDC DIP PLUG Features Pin 1 to conductor 1 construction Mass-terminates with .050 [1.27] center cable Ideal alternative to a soldered DIP interconnect Long tail version mates with

Contextual Info: CIR C UI T A S S E M B L Y CORP b'ÏE D • 5 1 3 3 7 5 a Q Q Q l ^ l ? Û0R H C A C IDC SUM LINE PLUG Features Mass-terminates with .050 [1.27] center cable Able to be soldered directly to P.C.B Specifications Environmental ji Temperature Range: -55°C to +120°C

CHN 535

Contextual Info: Single Output UNR Series Non-Isolated, 3.3V 8-40 Watt, DC/DC Converters Features N ew lo w -vo ltag e m ic ro p ro c e s s o r a nd m e m o ry ch ip s are d rivin g th e m ig ra tio n from ce n tra lize d to d istrib u te d p o w e r p ro ce ssin g in m od e rn te le c o m m u n ic a tio n and

YTF820

Contextual Info: YTF820 FELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE {»-MOS II INDUSTRIAL APPLICATIONS Unit in m m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX. . 03.6 ±0.2 C HOPPER REGULATOR, DC-DC C O NVERTER AND MOTOR DRIVE APPLICATIONS.

AmZ8530

Contextual Info: AmZ8030 • AmZ8530 SCC S e ria l Communications C o n tro lle r DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Two IM .b p s full duplex serial channels Each channel has independent oscillator, baud-rate generator, and PLL for clock recovery, dram atically re­

Supersot6

Abstract: ld32a NDC651N 55sc
Contextual Info: National • Semiconductor" March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description ■ 3.2A, 30V. Ft,*, , = 0.09£1 @ VGS = 4.5V R d sio n i = 0 .0 6 0 @ VGS = 10V. These N-Channel logic level enhancement mode

D-12

Abstract: IRGBC20U 12FFL
Contextual Info: P D - 9.681 A International S Rectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency {over 5kHz See Fig. 1 for Current vs. Frequency curve

diode 4j

Contextual Info: P D - 9 .1 4 1 0 A International IOR Rectifier IRFP044N H E X F E T Pow er M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55 V ^DS on = 0 .0 2 0 Q