24 MARKING CODE TRANSISTOR Search Results

itt ol 170

Contextual Info: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch

ut 406 hall

Abstract: HAL800 can calibration protocol
Contextual Info: ADVANCE INFORMATION HAL800 Programmable Linear Hall Effect Sensor MICRONAS Edition Aug. 24, 1998 6251-441-1AI HAL 800 ADVANCE INFORMATION Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Major Applications Features Marking Code

Contextual Info: ADVANCE INFORMATION HAL114 Hall Effect Sensor IC MICRONAS Edition May 5, 1997 6251-456-1AI HAL114 Hall Effect Sensor IC in CMOS technology Features: ADVANCE INFORMATION Marking Code Type Temperature Range A E C 114A 114E 114C – operates from 4.5 V to 24 V supply voltage

DMN3300U

Abstract: DMN3300U-7
Contextual Info: DMN3300U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance • 150 mΩ @VGS = 4.5V • 200 mΩ @VGS = 2.5V

Contextual Info: SD2931-12MR 150 W – 50 V moisture resistant HF/VHF DMOS transistor Datasheet - production data Description The SD2931-12MR is a gold metallized Nchannel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V DC large

transistor BF 509

Abstract: l43 transistor c328 transistor BF509 transistor sr 61 transistor 3s4 transistor marking l43 Transistor Marking C3 sot-23 TRANSISTOR MARKING 76 bc238c
Contextual Info: TELEFUNKEN filC D ELECTRONIC • fiTEDD^b D0DS21b 4 « A L G 6 BF 509 YIIUKPtlDMKdKM electronic Creative Technologies Silicon PNP RF Transistor Applications: Gain controlled VHF input stages Features: • High power gain • Low noise figure • High reverse attenuation

p15 transistor

Abstract: DDTA113ZKA DDTA123JKA DDTA123YKA DDTA143FKA DDTA143XKA DDTA143ZKA J-STD-020A 22KW
Contextual Info: DDTA R1¹R2 SERIES KA PNP PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1¹R2 A OUT B C Mechanical Data · · ·

DDTC113ZKA

Abstract: DDTC123JKA DDTC123YKA DDTC143FKA DDTC143XKA DDTC143ZKA J-STD-020A transistor n21
Contextual Info: DDTC R1¹R2 SERIES KA NPN PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · A Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 OUT B C Mechanical Data · · ·

Bead 220 ohm 2.5A

Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
Contextual Info: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

sd2931-10w

Abstract: marking code oz 09-Sep-2004
Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

n02 marking code sot

Abstract: transistor T 523 2.2KW DDTC143FE DDTC113ZE DDTC114WE DDTC114YE DDTC123JE DDTC123YE N02 Transistor
Contextual Info: DDTC R1¹R2 SERIES E NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 A OUT TOP VIEW Mechanical Data ·

sot-23 MARKING CODE 1KW

Abstract: DDTA114WCA SCHEMATIC 10kw POWER SUPPLY DDTA113ZCA 10kw POWER SUPPLY schematic CA Marking SOT23 transistor marking 68 SOT-23 DDTA114YCA DDTA124XCA marking CODE 68 transistor sot23
Contextual Info: SPICE MODELS: DDTA113ZCA DDTA123YCA DDTA123JCA DDTA143XCA DDTA143FCA DDTA143ZCA DDTA114YCA DDTA114WCA DDTA124XCA DDTA144VCA DDTA144WCA DDTA R1¹R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

SCHEMATIC 10kw POWER SUPPLY SCHEMATIC

Abstract: DDTA114WUA DDTA114YUA MARKING V SOT-323 DDTA113ZUA DDTA123JUA DDTA123YUA DDTA124XUA DDTA143FUA DDTA143XUA
Contextual Info: SPICE MODELS: DDTA113ZUA DDTA123YUA DDTA123JUA DDTA143XUA DDTA143FUA DDTA143ZUA DDTA114YUA DDTA114WUA DDTA124XUA DDTA144VUA DDTA144WUA DDTA R1¹R2 SERIES UA PNP PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

n02 marking code sot

Abstract: n05 marking code SCHEMATIC 10kw POWER DDTC143FE DDTC113ZE DDTC114WE DDTC114YE DDTC123JE DDTC123YE DDTC124XE
Contextual Info: SPICE MODELS: DDTC113ZE DDTC123YE DDTC123JE DDTC143XE DDTC143FE DDTC143ZE DDTC114YE DDTC114WE DDTC124XE DDTC144VE DDTC144WE DDTC R1¹R2 SERIES E NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

transistor marking p02

Abstract: Marking P15 pnp DDTA114WE 24 SOT523 DDTA113ZE DDTA114YE DDTA123JE DDTA123YE DDTA124XE DDTA143FE
Contextual Info: SPICE MODELS: DDTA113ZE DDTA123YE DDTA123JE DDTA143XE DDTA143FE DDTA143ZE DDTA114YE DDTA114WE DDTA124XE DDTA144VE DDTA144WE DDTA R1¹R2 SERIES E PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)

TPC6003

Abstract: marking CODE 001
Contextual Info: TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6003 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 7 S (typ.)

S3H 02 diode

Abstract: MARKING S3H TRANSISTOR DIODE S3H
Contextual Info: TPC6108 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOSⅣ TPC6108 Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)

TPC6109-H

Abstract: TPC6109
Contextual Info: TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Ultra-High-Speed U-MOSIII TPC6109-H High-Efficiency DC/DC Converter Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.)

DCX100NS

Abstract: DCX100NS-7
Contextual Info: DCX100NS 100mA DUAL PRE-BIASED TRANSISTORS General Descriptions • DCX100NS is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete PNP pass transistor which

Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens

TPC6005

Contextual Info: TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC6005 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)

2N60 transistor

Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor