23DB Search Results

2SC3136

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR -2SC3136 TV VHF M IX E R A PPLICATIONS. • • U n i t in m m High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) M A X IM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

RF POWER TRANSISTOR NPN

Abstract: 15 w RF POWER TRANSISTOR NPN RF TRANSISTOR 2SC3123 vhf high gain transistor ic 5ma transistor high gain low capacitance NPN transistor
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3123 DESCRIPTION •High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. APPLICATIONS ·Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS Ta=25℃

Contextual Info: HE385C/HEM385C/HES385C Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves Gain dB GAIN Features Frequency Range: 20～250MHz l Low Noise: 1.8dB(Typical) l 23dBm Typical 1dB Compression l Active Bias Design Supply Temperature Compensation

Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER „ Single Power Supply 3.0V to 5.0V NC VCC1 NC 12 RF IN 2 Input Match 28dB Typical Small Signal Gain RF IN 3 10 RF OUT „ „ „ „ Power Detector Bias Circuit NC 4 9 NC 5 +23dBm, <4%EVM, 250mA at VCC =5.0V

Contextual Info: Coaxial Directional Coupler 50Ω 23dB ZNDC-23-2G 800 to 2000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power input 3W Max. Coaxial Connections INPUT OUTPUT COUPLED 1 2 3 • excellent insertion loss, 0.5 dB typ.

Contextual Info: Surface Mount Frequency Mixer Level 23 LO Power +23dBm 400 to 2500 MHz Maximum Ratings Operating Temperature Features -45°C to 85°C Storage Temperature • • • • RoHS compliant very high IP3, 32 dBm typ. wideband, 400 to 2500 MHz excellent L-R isolation, 50 dB typ.

microwave MARCONI

Abstract: H40P NN12 P35-5123-000-200 MARCONI power
Contextual Info: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm

Contextual Info: RFCR2310 RFCR2310 900MHz to 930MHz Single Junction Drop-In Circulator 900MHz TO 930MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1in Features  Typical Insertion Loss Less than 0.2dB  -70dBc IMD Typical  Isolation Greater than 23dB

200MHZ

Abstract: 2SC3123 marking he
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Reverse Transfer Capacitance : Cre=0.4F TYP. 0.55 High Conversion Gain :Gce=23dB(TYP.) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: Frequency Mixer ZAY-1 Typical Performance Curves Conversion Loss vs. IF @ RF=250.1MHz Conversion Loss @ IF=30MHz 6.10 14 6.05 LO = +20dBm 12 LO = +23dBm 11 LO = +26dBm Conversion Loss dB Conversion Loss (dB) 13 6.00 LO = +23dBm 5.95 5.90 10 5.85 9 5.80 8

Contextual Info: Frequency Mixer ZAY-2 Typical Performance Curves Conversion Loss @ IF=30MHz Conversion Loss vs. IF @ RF=500.1MHz 15 7.00 6.95 LO = +20dBm 13 LO = +23dBm 12 LO = +26dBm LO = +23dBm Conversion Loss dB Conversion Loss (dB) 14 6.90 6.85 11 6.80 10 6.75 9 6.70

MGF0916A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm

Contextual Info: High Power Bi-Directional Coupler 50Ω 23dB Coupling Maximum Ratings DC Pass SYBD-23-13HP+ 800 to 1000 MHz Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C DC Current 2A Permanent damage may occur if any of these limits are exceeded.

ZNDC-23-2G

Abstract: ZNDC-23-2G-S
Contextual Info: Coaxial ZNDC-23-2G+ ZNDC-23-2G Directional Coupler 50Ω 23dB 800 to 2000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power input 3W Max. Permanent damage may occur if any of these limits are exceeded.

SE5003L

Abstract: sige 5003L SE5003L-EK1 SE5003 2527L SE5003L-R SIGE SEMICONDUCTOR 2527l 5003L SIGE 2527l
Contextual Info: SE5003L 5 GHz, 23dBm Power Amplifier with Power Detector Preliminary Information Applications ƒ ƒ ƒ Product Description The SE5003L is a 5GHz power amplifier offering high linear power for wireless LAN applications. The SE5003L incorporates a power detector for closed

pc1678g

Abstract: 77A7 1678G
Contextual Info: — 150 — fi P C 16 7 8 G o ia S im * m X / " + 17.5dBrn typ o ««Wtt-2.0GHztyp 0.1G H z 3dB i ' ' 1? V O S ® « O H£:ÎJŸIJÎ#-23dB ty p a t 0.5G H z O T y U— > 3 •35d B ty p a t 0.5GH z o/i-y'r —v 8fy -V<onm. 0 -i »^ae&«effl®esw T„ = 2 5 0

SCL 1058

Abstract: GP145 IDS800 MGF0915A fet GP145 3268
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

Transistor W03

Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
Contextual Info: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high

Contextual Info: RFCR2704 RFCR2704 2090MHz to 2190MHz Single Junction Drop-In Circulator 2090MHz TO 2190MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1in Features  Typical Insertion Loss Less than 0.2dB  -75dBc IMD Typical  Isolation Greater than 23dB

Contextual Info: h a r CA3049,J CA3102 ® S E M I C O N D U C T O R Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz N o vem b er 1996 Features Description • Power Gain 23dB T y p . 200MHz T he C A 3 0 4 9 T and C A 3 10 2 co n sist o f tw o in de pen de nt

Contextual Info: RF5112 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features  Single Power Supply 3.0V to 5.0V  +23dBm, <4%EVM, 250mA at VCC =5.0V  +21dBm, <4.0%EVM, 185mA atVCC =3.3V  28dB Typical Small Signal Gain  50 Input and Interstage Matching

Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features Single Power Supply 3.0V to 5.0V 28dB Typical Small Signal Gain  50 Input and Interstage Matching  2400MHz to 2500MHz Frequency Range  +23dBm, <4%EVM, 250mA at VCC =5.0V NC VC1 NC

Contextual Info: MAMX-009646-23DBML E-Series Surface Mount Mixer 2-2200 MHz M/A-COM Products Advanced - Rev. V1 Product Image Features • LO Power +23 dBm  Up to +23 dBm RF  Surface Mount  Tape and reel packaging available  260°C Reflow Compatible

wifi RECEIVER CIRCUIT DIAGRAM

Abstract: wifi 2.4ghz DETECTOR CIRCUIT DIAGRAM
Contextual Info: RF5765 2.4GHz 802.11b/g/n WiFi FRONT-END MODULE Features    Integrated 2.4GHz b/g/n Amplifier, LNA, SP3T Switch, and Power Detector Coupler Single Supply Voltage 3.0V to 4.8V POUT =20dBm, 11g, OFDM at <4% EVM, 23dBm 11b Meeting 11b Spectral Mask Tx In