213C1 Search Results

Contextual Info: TOSHIBA 2SC3147 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 147 VHF BAND PO W ER AM PLIFIER APPLICATIONS Unit in mm 18.4±Q5 • Output Power • : High Efficiency : Po = 50W Min. (f = 175MHz, V ee = 12.5V, = 70% (Typ.) VC, —70% (Typ.)

2SC3213

Abstract: 2SC3170 2SC3159 MP40 2sc3153 2sc3180n 2sc3211 2SC3157 2SA1263N 2SC3175
Contextual Info: - 148 - Ält iàü Jfcfcæfë Ta=25‘ C,*EDtàTc=25,C -6 •V-L /V rrj /ü ; Vc e o (V) 2SC3143 2SC3144 HV SW/LF A =i* 2SC3145 (V) . Pc Pc* (A) (W) (W) 0. 08 n m •C(DC) ICBO (max) ink) VcB (V) 0. 1 0.2 120 (min) hF E 60 180 160 HS Stf/D 70 60 3 1.75

2SC3147

Contextual Info: TOSHIBA 2SC3147 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 47 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm 1R4±Q5 Output Power High Efficiency : Po = 50W Min. (f= 175MHz, v e e = 1 2 .5 V , 7 c = 70%(Typ-) 7 c —70% (Typ.) MAXIMUM RATINGS (Tc = 25°C)

211sa

Abstract: coil former E55 a1600 E55 coil E55/28/21 CBW063 3C81-E630 3C30 3C81 3C85
Contextual Info: Philips Components Product specification E cores and accessories E55/28/21 CORE SETS Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ I/A core factor (C1) 0.350 mm−1 Ve effective volume 44000 mm3 Ie effective length 124 mm Ae effective area 353

PHILIPS toroidal core 2P80

Abstract: PHILIPS toroidal core 3c90 push-pull converter design Philips Components, Soft Ferrites 3C11 philips 3e1 ferrite material PHILIPS toroidal core 4a11 ETD29-3C90 smd marking 330 e71 ETD59-3F3 philips 4b1 ferrite rod
Contextual Info: Soft Ferrites and Accessories Contents Introduction Quality Environmental aspects of soft ferrites Ordering information Applications Literature and reference publications Ferrite materials survey and specifications - Ferrite materials survey - Material specifications and graphs

E71/33/32-3C90

Abstract: 43120203664 philips rm8 3C85 a250 P14/8-3H1-A315/N 3C80 philips 4330-030-3779 EC35-3c8 ETD29-3C85 P22/13-3B7 ETD34 3C80
Contextual Info: MAIN MAIN MENU MENU CONVERSION LIST Philips Components Conversion list Type number to 11NC Conversion list type number to 11NC Product status definitions STATUS INDICATION DEFINITION Prototype PROT These are products that have been made as development samples for the purposes of

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

transistor A 564

Abstract: S-AV8 2-13B1A 564 transistor S-AU4
Contextual Info: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

Contextual Info: 1 1234456789 1 A3BCDEF18DD1DF7D3FD77D 1 1D31FD811 1DFF3D1 1 DEF33BC1 1 1 F1 1 1 51  !561 F"1 #$1 5%51 !61 6551 &"D'1 6551 %51 61 1 #(5%5(1 6 6(1*+(571

Contextual Info: T O SH IB A 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 2 VHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 80W Min. (f= 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC

Contextual Info: 1 200.00 MHz LVPECL Oscillator 23456666678 High Performance Differential MEMS Oscillator 1232456631 789ABC8DEE 1 1 1 1 1 1 1 234564789A111 66194A11 23456478919A1 691"#4A1 7&3&18'#4 A1 ,E1-(41.43A1 437#14!43634A1

3H1 ferroxcube

Abstract: ferroxcube 3E2 4322-020-34420 43220203440 4330-030-34220 432202034400 4313-020-15170 4322-021-33850 4322-020-97160 4322-021-30
Contextual Info: !r0 FERROKCUBE Description by Part Number List FERROXCUBE PART NUMBERS 12NC BREAKDOWN 43 12 Magnetic for 3rd party Factory code 020 5593 Pairs Halves Accessories Drawing no. Issue no. changes with packaging at factory FACTORY CODES SET CODES 35 = 12 = 22 =

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

Contextual Info: 1 1234456789 1 ABCDEF81CEAE1BDE8BBDE38EBE 1 1E3D1D8ECDBB11 1E883DE7B1D1 DE51 F33B81 1 1 1 E51 51 !"1 # 1 "#51 $ 1 D#1 E5 51 51 "1 6" 5*1 E51 F33B81 #561 E)E1

2sc5066

Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2SC2783

Abstract: uhf 13W amplifier
Contextual Info: 2SC2783 T O S H IB A T O SH IB A TR A N SISTO R SILICO N NPN E P ITA X IA L P LA N A R TY P E 2SC2783 UHF BAN D PO W ER A M PLIFIER A P P LICA TIO N S • O utput Power : Po = 40W M in. (f= 470M Hz, V c c = 12-5V, Pi = 13W) U n it in m m 18.4±Q5 M AXIM UM RATIN G S (Tc = 25°C)

transistor 2sc2782

Abstract: NPN 2SC2782
Contextual Info: TOSHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS. U nit in mm ia 4 ± a 5 O utput Power : Po = 80W Min. (f = 175MHz, V c c = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

2SC3147

Abstract: TRANSISTOR 2SC3147
Contextual Info: 2SC3147 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE wêêêf m m • m m Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. ia4±a5 Output Power : Po = 50W Min. (f= 175MHz, V cc = 12.5V, ?C = 70%(Typ.) High Efficiency: 7c = 70% (Typ.) MAXIMUM RATINGS (Tc = 25°C)

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

c151c

Abstract: bge25-800.21
Contextual Info: 1 1 11 2345567895 1 ABCD1E92C1FA12BD19FBBD1491B1 1 114D2D9F1CDBB21 119894D1FB2D1 DE51 F33B831 1 1 51 1 1 51 561 1 !"1  5165'&5$ 1 3*9 +,-.99 +,/71

2sc2805

Abstract: 2SC2819H 2SA1174 2SC2811 2SC2808 2SC2810 2SC2800 251C 2SC2776 2SC2778
Contextual Info: - 134 - n Ta=25°Ot *EPÍáTc=25'C m s ít £ ffl 335 VcBO Vc e o lc(DC) Pc Pc* I cbo ViitaA/ (V) (V) (A) (W) (W) (/¿A) 2SC2776 ByL VHF A/MIX/OSC 30 20 0. 03 0.1 2SC2778 fâT HF A 30 20 0.03 0.2 2SC2780 am LF A 140 140 0.05 2 36 16 20 220 2SC2782 175MHz PA