39PFX Search Results

33PFX4

Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
Contextual Info: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING

Contextual Info: TOSHIBA 2SC3147 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 147 VHF BAND PO W ER AM PLIFIER APPLICATIONS Unit in mm 18.4±Q5 • Output Power • : High Efficiency : Po = 50W Min. (f = 175MHz, V ee = 12.5V, = 70% (Typ.) VC, —70% (Typ.)

2SC3147

Contextual Info: TOSHIBA 2SC3147 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 47 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm 1R4±Q5 Output Power High Efficiency : Po = 50W Min. (f= 175MHz, v e e = 1 2 .5 V , 7 c = 70%(Typ-) 7 c —70% (Typ.) MAXIMUM RATINGS (Tc = 25°C)

transistor 2sc2782

Abstract: NPN 2SC2782
Contextual Info: TOSHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS. U nit in mm ia 4 ± a 5 O utput Power : Po = 80W Min. (f = 175MHz, V c c = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL

2SC3147

Abstract: TRANSISTOR 2SC3147
Contextual Info: 2SC3147 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE wêêêf m m • m m Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. ia4±a5 Output Power : Po = 50W Min. (f= 175MHz, V cc = 12.5V, ?C = 70%(Typ.) High Efficiency: 7c = 70% (Typ.) MAXIMUM RATINGS (Tc = 25°C)