20AUG07 Search Results

31GF6 diode

Abstract: 31GF6 JESD22-B102 J-STD-002
Contextual Info: 31GF6 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency • High forward surge capability DO-201AD

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

FGP10B

Abstract: FGP10D
Contextual Info: New Product FGP10B thru FGP10D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time d* e t n e Pat *Glass Encapsulation

specifications on 1n5818

Contextual Info: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41

Contextual Info: SBYV26C Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for printed circuit boards • Ultrafast reverse recovery time • Low forward voltage drop ed* t n e Pat *Glass Encapsulation

FGP30B

Contextual Info: New Product FGP30B thru FGP30D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency

FGP30B

Contextual Info: New Product FGP30B thru FGP30D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency

FGP20B

Contextual Info: New Product FGP20B thru FGP20D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current d* e t n e Pat • Low switching losses, high efficiency

SBYV27-200

Abstract: SBYV27-50 SBYV27-100 SBYV27-150
Contextual Info: SBYV27-50 thru SBYV27-200 Vishay General Semiconductor Soft Recovery Ultrafast Plastic Rectifier FEATURES • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability

Contextual Info: 1N5820 thru 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • • • • • • • • DO-201AD PRIMARY CHARACTERISTICS IF AV 3.0 A VRRM 20 V, 30 V, 40 V IFSM 80 A VF 0.475 V, 0.500 V, 0.525 V TJ max. 125 °C Guardring for overvoltage protection

BX 330 transistor

Abstract: CDR02 CDR03 CDR31 CDR32 CDR33 45026 CDR31BP
Contextual Info: CDR-MIL-PRF-55681 Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors, Qualified, Type CDR FEATURES • Military qualified products • Federal stock control number, CAGE CODE 95275 • High reliability tested per MIL-PRF-55681 Available RoHS*

SB360S

Abstract: DO-204AC JESD22-B102D J-STD-002B SB320S SB330S
Contextual Info: New Product SB320S thru SB360S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability • Solder dip 260 °C, 40 seconds

SB540A

Abstract: SB550A JESD22-B102D J-STD-002B SB520A SB530A SB560A
Contextual Info: New Product SB520A thru SB560A Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation

1N5822 data sheet

Abstract: 1N5820 1N5821 1N5822 JESD22-B102D J-STD-002B
Contextual Info: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation

Contextual Info: SPICE Device Model Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

DO-204AL

Abstract: JESD22-B102D J-STD-002B SB1H100 SB1H90
Contextual Info: New Product SB1H90 & SB1H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency

Contextual Info: SPICE Device Model Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

ECR-07-01

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . C O P Y R IG H T 2 3 RELEASED BY ^ C O E L E C T R O N IC S FO R ALL C O R P O R A T IO N . P U B L IC A T IO N R IG H T S REVISIO N S RESERVED. 50 LTR K2 K3 D D E S C R IP T IO N DATE DWN REVISED PER ECR-07-01

tyco 089

Contextual Info: 4 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYR IG H T 2 R EU EA SED FO R PU B U IC ATIO N BY ^ C O EUECTRO NICS CO RPO RATIO N . - - 50 AUU R IG H T S R E S E R V E D . REVISION S LTR A1 D D E S C R IP T IO N DATE REL PER ECR 0 7 -0 1 9 4 1 5 DWN

DM6030HK

Abstract: TS3332LD XB1004-BD XP1013-BD XU1003-BD XU1003-BD-000V XU1003-BD-EV1
Contextual Info: 19.0-26.0 GHz GaAs MMIC Transmitter U1003-BD August 2007 - Rev 20-Aug-07 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 100% On-Wafer RF and DC Testing

SB140-E3/73

Abstract: DO-204AL JESD22-B102D J-STD-002B SB130 SB160
Contextual Info: SB120 thru SB160 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation

sb240 diode

Abstract: DO-204AC JESD22-B102D J-STD-002B SB220 SB230 SB260
Contextual Info: New Product SB220 thru SB260 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability

1N5819 General Semiconductor

Abstract: 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D J-STD-002B
Contextual Info: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41

JESD22-B102D

Abstract: J-STD-002B SB5H100 SB5H90
Contextual Info: SB5H90 & SB5H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop