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    SI5857DU Search Results

    SI5857DU Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI5857DU-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A PPAK CHIPFET Original PDF 12
    SI5857DU-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A PPAK CHIPFET Original PDF 12

    SI5857DU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si5857DU-T1-GE3

    Contextual Info: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Power MOSFET • New Thermally Enhanced PowerPAK®


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    si5857du18-jul-08si5857du-t1-ge3 PDF

    Contextual Info: SPICE Device Model Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    si5857dus-71712rev20-aug-07 PDF

    Contextual Info: SPICE Device Model Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    si5857du18-jul-08 PDF

    si5857

    Contextual Info: Si5857DU New Product Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.058 at VGS = –4.5 V 6 0.100 at VGS = –2.5 V 6 VDS (V) –20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr


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    si5857du60414--rev20-mar-06si5857 PDF

    Contextual Info: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET


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    si5857du2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET


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    si5857du2002/95/ec11-mar-11 PDF

    Si5857DU-T1-GE3

    Contextual Info: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET


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    si5857du2002/95/ec18-jul-08si5857du-t1-ge3 PDF

    74274

    Abstract: 9327 AN609
    Contextual Info: Si5857DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    si5857duan60927-jun-0774274+19327 PDF

    Si5857DU-T1-E3

    Abstract: 62480
    Contextual Info: Si5857DU Vishay Siliconix New Product P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • LITTLE FOOT Plus Power MOSFET • New Thermally Enhanced PowerPAK®


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    si5857du08-apr-05si5857du-t1-e362480 PDF

    Contextual Info: Si5857DU New Product Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.058 at VGS = –4.5 V 6 0.100 at VGS = –2.5 V 6 VDS (V) –20 D LITTLE FOOTr Plus Power MOSFET D New Thermally Enhanced PowerPAKr


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    si5857dusi5857dus08-apr-05 PDF

    Contextual Info: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET


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    si5857du2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET


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    si5857du2002/95/ec2011/65/eu12-mar-12 PDF

    SD414-2R2

    Abstract: inductor 0603 2.2uH LED LEVEL METER DRIVER CRCW060310K0FKTA IHLP1616BZ11-2R2 MIC2299 MIC2299-15YML VJ0603Y104KXAAT C1608C0G1H101J ILED100
    Contextual Info: MIC2299 Evaluation Board 3.5A ISWMIN, 2MHz, High Power LED Driver w/ 3 Preset LED Current Settings General Description This board enables the evaluation of the 3.5A switch, High Power white LED driver MIC2299. The board includes components necessary to set the LED current to 20%,


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    mic2299300msm9999-092707-asd414-2r2+8inductor 0603 2.2uhled level meter drivercrcw060310k0fktaihlp1616bz11-2r2mic2299-15ymlvj0603y104kxaatc1608c0g1h101jiled100 PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    si3865bdv-t1-e3ct-ndsi4720cy-t1-e3ct-ndsi6924aedq-t1-e3ct-ndsi1040x-t1-e3tr-nd+16si1865dl-t1-e3tr-ndsi1869dh-t1-e3tr-ndsi3861bdv-t1-e3tr-ndsi3865bdv-t1-e3tr-ndsi4720cy-t1-e3tr-ndsi6924aedq-t1-e3tr-ndbs250kl-tr1-e3si6435adq-t1-e3tp0610klsi9435bdy-t1-e3ctsi6467bdq-t1-e3si1024x-t1-e3si5855dc-t1-e3sia411dj-t1-e3sum110p06-07l-e3 d2paksi1903dl-t1-e3 PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


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    si9165si9169600-matssop-20+12msop-10sip1759gs 069si5902dc spice device modeltsop6 marking 312sc89-6si7705dnsi7100dnsi3865bdvsi5947dusi3861bdv1212-8 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8si4812bsi-4102si7149dpsim400si4932si7135sib914si4477 PDF

    vishay power pak SO-8 package height

    Abstract: si4812b Siliconix mosfet guide PowerPACK 1212-8 D2Pak Package vishay material Si5855DC "Power MOSFETs" 1206-8 chipfet layout SI4620DY PowerPAK SO-8
    Contextual Info: Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    sc-75sc-75asc-89vishay power pak so-8 package height+9si4812bsiliconix mosfet guidepowerpack 1212-8d2pak package vishay materialsi5855dcpower mosfets1206-8 chipfet layoutsi4620dypowerpak so-8 PDF

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


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    si6463bdqsi6459bdq-t1-ge3si5944du-t1-e3si5944du-t1-ge3+15si5945du-t1-e3si5945du-t1-ge3si5947du-t1-e3si5947du-t1-ge3ppaksc75si5480sia913dj-t1-ge3sia513dj-t1-e3si6404dq-t1sia411dj-t1-e3sib414dk-t1-e3si6913dq-t1-e3sia513dj-t1-ge3si6925adq-t1-e3si6981dq-t1-ge3 PDF