204A Search Results

MARKING A1G

Abstract: marking code A1G
Contextual Info: UF4001 - UF4007 1.0AMP. Glass Passivated High Efficient Rectifiers DO-41/DO-204AL Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Glass passivated chip junction Low cost Ultrafast recovery time for high efficiency High efficiency, low VF

vishay Axial DO-204AR

Contextual Info: Part Marking Information www.vishay.com Vishay Semiconductors Axial > 4 A for DO-204AR Part number V XXXXXXX ZYYWWX Z = Environmental digit - none = Lead Pb -free and RoHS compliant - M = Halogen-free, RoHS compliant, and terminations lead (Pb)-free YY = Two digit for the year

Contextual Info: P4KE SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – P4KE SERIES FEATURE Plastic package. Glass passivated chip junction in DO-204AL/DO-41 Package 400W peak pulse power capability on 10/1000 s waveform. Excellent clamping capability. Low zener impedance.

mur120-e3

Contextual Info: MUR120 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency DO-204AC DO-15

11df6

Abstract: 11df6 diode 11DF8 11DF1 11DF5 11DF2 DO-204AL 11DF3
Contextual Info: 11DF1 thru 11DF8 Crownpo Technology Glass Passivated Ultrafast Rectifier Reverse Voltage 100 to 800 V Forward Current 1.0 A Features DO-204AL DO-41 N Plastic package has Underwriters Laboratories Flammability Classification 94V-0 N Cavity-free glass passivated junction

Contextual Info: 1N4448 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 75V • Peak reverse voltage:max. 100 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4)

MV1403

Abstract: 210PF
Contextual Info: MV1403 TUNING VARACTOR DESCRIPTION: The ASI MV1403 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 140 – 210pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS

Contextual Info: fX S ific o n ix SMM11P20 in c o r p o r a te d P-Channel Enhancement Mode Transistor T0-204AA TO-3 BOTTOM VIEW PRODUCT SUMMARY V (BR)DSS r DS(ON) •d (V) (A) (A) -200 0.50 -1 1 1 DRAIN (CASE) 2 GATE 3 SOURCE ABSO LU TE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

mv1404

Contextual Info: MV1404 TUNING VARACTOR DESCRIPTION: The ASI MV1404 is a Silicon Hyper-Abrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA FEATURES: • High Capacitance: 90 – 144pF • High Q: 200 Min. Millimeters MAXIMUM RATINGS 12 V V I 250 mA PDISS

transistor 206

Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3

diode 1N 4002

Abstract: 1N4001 1N4007 DO-204AL J-STD-002B Diodes 1n 4004 1N4007 vishay 1N4007 VISHAY 88503 IN 4004 diodes 1n4001 diodes
Contextual Info: 1N4001 thru 1N4007 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V IR 5.0 µA Tj max. 150 °C DO-204AL (DO-41) Features • Low forward voltage drop • Low leakage current

Contextual Info: Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-204AR DIMENSIONS in millimeters inches 6.35 (0.250) DIA. 6.10 (0.240) Cathode band 27.94 (1.10) MIN. (2 places) 9.52 (0.375) 9.27 (0.365) 27.94 (1.10) MIN. (2 places) 9.52 (0.375) 9.27 (0.365)

Contextual Info: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400

UGP20G

Abstract: UGP20J UGP20K DO-204AC UGP20 UGP20A
Contextual Info: UGP20A THRU UGP20K SINTERED GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 800 Volts TED N E T A P Forward Current - 2.0 Amperes DO-204AC FEATURES 0.230 5.8 0.300(7.6) 1.0(25.4) MIN. 0.104(2.6) DIA. GPRC (Glass Passivated Rectifier Chip) inside

GP02-12

Abstract: gp02-16 DO-204AL GP02 GP02-20 GP0216
Contextual Info: GP02-12 THRU GP02-20 HIGH VOLTAGE SINTERED GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 1200 to 2000 Volts EEDD T T N N E E T T PPAA Forward Current - 1.0 Ampere DO-204AL FEATURES GPRC Glass Passivated Rectifier Chip inside Glass passivated cavity-free junction

RGP20

Abstract: DO-204AC
Contextual Info: RGP20AH THRU RGP20MH SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts EEDD T T N N E E T T PPAA Forward Current - 2.0 Amperes DO-204AC FEATURES * Halogen-free type 0.140 3.6 0.104(2.6) DIA. 1.0(25.4) MIN. * GPRC (Glass Passivated Rectifier Chip) inside

DO-204AL

Abstract: SB2100 SB220 SB240 SB260
Contextual Info: SB220 THRU SB2100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 2.0 Amperes DO-204AL FEATURES 1.0 25.4 MIN. 0.034(0.86) 1.0(25.4) MIN. 0.205(5.20) 0.160(4.10) 0.107(2.70) 0.080(2.00) DIA. * Plastic package has Underwriters Laboratory

Contextual Info: 1N5142 asi TUNING VARACTOR DIODE DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. PACKAGE STYLE D0-204AA -nrB MAXIMUM RATINGS - 250 mA If Vr 60 V P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C

DO-204AC

Abstract: EGP15A EGP15F EGP15G EGP15J EGP15M
Contextual Info: EGP15A THRU EGP15M SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts ED T N E T PA Forward Current - 1.5 Amperes DO-204AC 1.0 25.4 MIN. FEATURES * * * * * * * GPRC (Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
Contextual Info: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

1E14

Abstract: 2E12 FRM230D FRM230H FRM230R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 200V, RDS on = 0.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

4N50

Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB

IRFAG40

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAG50

Contextual Info: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.