2048 Search Results

CT 2048

Abstract: D8228
Contextual Info: SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L 2048 x 9,4096 x 9,8192 x 9,16384 x9 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES SCAS226A - FEBRUARY 1993 - REVISED SEPTEMBER 1995 Reads and Writes Can Be Asynchronous or Coincident Organization: - SN74ACT7203L - 2048 x 9

TCD131D

Abstract: TC74HC04P 2SA1015-Y 2SA1015 Y
Contextual Info: C D 1 3 1 D The TCD131D is a high resolution and high sensitivity 2048-element linear image sensor. The device can be used foi OCR» POS handscanner bar-code type , and other optical measurements. The device is operated by only 12V power supply. The device is mounted in 22-pin Cerdip package

Contextual Info: T E X A S I N S T R -[ A S I C / N E M O R Y > 7 D D E | A T b l 7 2 S □ □ 3 S 7 E 0 T T -Hb-13-3-5 PRODUCT PREVIEW TBP38SA165, TBP38SA166, TBP38SA16X 16,384-BIT 2048 WORDS BY 8 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES JAN UARY 1985 —REVISED APRIL 1985

programmable storage device

Contextual Info: TMS29F816 16 384-BIT SCOPE DIARY JTAG ADDRESSABLE STORAGE DEVICE SMJS816B-NOVEMBER1990-REVISED JANUARY 1993 FM PACKAGEt TOP VIEW * Member of Texas Instruments SCOPE'“ Family of Testability Products * IEEE 1149.1 Serial Test Bus Compatible * Organization . . . 2048 x 8-Bit Flash Memory

TC58NVG1S3ETA00

Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
Contextual Info: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

Contextual Info: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 TS64MLQ64V8J Description Placement The TS64MLQ64V8J is a 64M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8J consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V8J Description Placement The TS128MLQ64V8J is a 128M x 64bits DDR2-800 Unbuffered DIMM. The TS128MLQ64V8J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 1024 x 36, 2048 × 36, 4096 × 36, 8192 × 36, 16384 × 36, 32768 × 36 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS668A – NOVEMBER 2001 – REVISED MARCH 2003 D D D D D D D D D Choice of Memory Organizations

msc 1697

Abstract: el 198 Response AA0482 mz 1540 switching supply pcr 606 r hasp bb a Nippon capacitors TRANSISTOR MOTOROLA MAC 223 WL 431 DSP56300
Contextual Info: MOTOROLA Order this document by: DSP56302/D SEMICONDUCTOR TECHNICAL DATA DSP56302 Advance Information 24-BIT DIGITAL SIGNAL PROCESSOR 3 SCI Interface Program RAM 20480 x 24 or X Data Y Data Program RAM RAM RAM 19456 × 24 and × × 24 7168 24 7168 Instruction

24LC16

Abstract: AM24LC02 AM24LC04 AM24LC08 AM24LC16 AM24LC16I AM24LC16V
Contextual Info: ATC AM24LC16 2-Wire Serial 16K-bits 2048 x 8 CMOS Electrically Erasable PROM General Description Features • State- of- the- Art Architecture - Non-volatile data storage - Full range Vcc = 2.7V to 5.5V • 2 wire I2C serial interface - Provides bi-directional data transfer protocol

X24C164

Abstract: X24164 X24C16 X4163
Contextual Info: Preliminary Information Recommended System Management Alternative: X4163 X24164 16K 2048 x 8 Bit Serial EEPROM DESCRIPTION • 2.7V to 5.5V power supply • Low power CMOS —Active read current less than 1mA —Active write current less than 3mA —Standby current less than 50µA

HN58X2508FPIE

Abstract: HN58X2508I HN58X2508TIE HN58X2516FPIE HN58X2516I HN58X2516TIE
Contextual Info: HN58X2508I HN58X2516I Serial Peripheral Interface 8k EEPROM 1024-word x 8-bit 16k EEPROM (2048-word × 8-bit) Electrically Erasable and Programmable Read Only Memory REJ03C0222-0200 Rev.2.00 Aug.19.2004 Description HN58X25xxx Series is the Serial Peripheral Interface (SPI) EEPROM (Electrically Erasable and

as15 G

Abstract: AS15 G IC AS15 U AS15 f ic as15 LC3516A-15 LC3516AL LC3516AM as15 h as15- f
Contextual Info: F No.2360 A sy n c h ro n o u s'S ilic o n Gate CMOS LSI r i LC3516A,AM,AS/LC3516flL• AML.AS I 2048 W o rd s x 8 B its CMOS S ta tic RAMs - LC3516A series are fully asynchronous silicon gate CMOS static RAMs orga­

IN6AG

Abstract: 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

ccd sony ilx511

Abstract: circuit board for sony ilx511 sensor ILX511 2SA1175 S2045 S2048
Contextual Info: ILX511 2048-pixel CCD Linear Image Sensor B/W Description The ILX511 is a rectangular reduction type CCD linear image sensor designed for bar code POS hand scanner and optical measuring equipment use. A built-in timing generator and clock-drivers ensure

T3D 46 DIODE

Abstract: Diode T3D 54 T3D 54 DIODE T3D 53 diode KAI-4010M T3D 53 DIODE T3D 95 40MHZ HLMP-8115 KAI-4010
Contextual Info: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-4010 KODAK KAI-4010M KODAK KAI-4010CM Image Sensor 2048 H x 2048 (V) Interline Transfer Progressive Scan CCD November 25, 2003 Revision 2.0 KAI-4010 Series Rev 2.0 www.kodak.com/go/imagers

M35101

Abstract: bpsk demodulator chip ask demodulator 2048-BIT
Contextual Info: M35101 13.56 MHz, ISO 14443, Contactless Memory Chip 2048-bit EEPROM DATA BRIEFING • ISO 14443-2 Type-B Standard Compliant ■ 13.56 MHz Carrier Frequency ■ 847 kHz Subcarrier Frequency ■ 106 Kbit/second Data Transfer ■ Internal Tuning Capacitor ■

PDIP28

Abstract: U631H16 ZMD AG
Contextual Info: U631H16 SoftStore 2K x 8 nvSRAM Features ! High-performance CMOS nonvola! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Packages: PDIP28 300 mil PDIP28 (600 mil) SOP28 (300 mil) SOP24 (300 mil) tile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable

HN462716

Abstract: HIM46271 HIM462716 HN462716G
Contextual Info: H N 462716, HN462716G 2048-w ord X 8-b it UV Erasable and Electrically Programmable Only Memory The HN462716 is a 2048 word by 8 bit erasable and electrically programmable RO M s. This device is packaged in a 24-pin, dual-in-line package w ith transparent lid. The transparent lid

4AC17

Abstract: texas instruments fifo cascaded SN74ACT7808
Contextual Info: SN74ACT7808 2048 x 9 STROBED FIRST-IN, FIRST-OUT MEMORY _SCAS205B - FEBRUARY 1991 - REVISED SEPTEMBER 1995 Load Clocks and Unload Clocks Can Be Asynchronous or Coincident * 2048 Words by 9 Bits • Expansion Logic for Depth Cascading 9 Empty, Full, and Half-Full Flags

CI 7426

Abstract: 2420Y 8T90 LB-19 128X8 256X8 512X4 DIL socket 16pin 8t70 N2430Y
Contextual Info: signotiEs FULLY DECODED 1024 AND 2048 STATIC READ-ONLY MEMORIES 2400 METAL GATE MOS 2400 SERIES D E S C R IP T IO N C U S T O M E N C O D IN G Th e S ign e tics 2 4 0 0 Series devices are hig h speed, f u lly d e ­ co de d , M O S s ta tic 1 02 4 and 2 0 4 8 -b it re a d -o n ly m e m orie s