200V IGBT Search Results

110N20

Abstract: pf 480 d25
Contextual Info: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)

FAN7888MX

Abstract: FAN7888 HIGH-VOLTAGE HALF BRIDGE DRIVER FAN7888M JESD51-2 JESD51-3 J-STD-020B MS-013
Contextual Info: FAN7888 3 Half-Bridge Gate-Drive IC Features Description „ Floating Channel for Bootstrap Operation to +200V The FAN7888 is a monolithic three half-bridge gate-drive IC designed for high-voltage, high-speed driving MOSFETs and IGBTs operating up to +200V.

Gate Turn-off Thyristor 600V 20A

Abstract: INVERTER 50 kW thyristor inverter igbt 500V 15A igbt 500V 1A ac Inverter 10 kw 15KW PVD150-6 snubber thyristor thyristor 15KW
Contextual Info: TENTATIVE PIM MODULE PVD150PVD150-6 15KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 15kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

11kw

Abstract: 600V 100A thyristor thyristor inverter dc 3phase ac inverter circuit PVD110-6 snubber thyristor 100A gate turn-off thyristor igbt 500V 1A
Contextual Info: TENTATIVE PIM MODULE PVD110PVD110-6 11KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 11kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

igbt 500V 50A

Abstract: igbt 500V 1A PVD55-6 thyristor inverter
Contextual Info: TENTATIVE PIM MODULE PVD55 PVD55-6 5.5KW 200V Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 5.5kw 200V Inverter MAXMUM RATINGS Tc=25°C Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage

schematic DIAGRAM AVR 150 kva GENERATOR

Abstract: schematic DIAGRAM AVR 500 kva GENERATOR schematic diagram igbt inverter welding machine A143 PNP switching transistor 007NFEF2 040HFEF2 005NFEF2 L200-011NFE 200V DC TO 240V AC inverter schematic diagram schematic diagram UPS 5 KVA
Contextual Info: Cover L2002 Series Inverter Instruction Manual • Single-phase Input 200V Class • Three-phase Input 200V Class • Three-phase Input 400V Class Manual Number: NB675X Sept. 2006 After reading this manual, keep it handy for future reference. Hitachi Industrial Equipment Systems Co., Ltd.

diode mur

Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Contextual Info: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.

106N20

Abstract: 90N20 IXFN 360 D-68623
Contextual Info: IXFK 90N20 IXFN 106N20 Preliminary Data VDSS TM HiPerFET Power MOSFET ID25 RDS on trr IXFK 90N20 200V 90A 23mΩ 200ns IXFN 106N20 200V 106A 20mΩ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions

Contextual Info: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns FMP26-02P VDSS 43 ID25 T1 5 34 T2 (Electrically Isolated Tab) 11 22 Symbol Test Conditions

FMP26-02P

Abstract: IXYS Class D Switching Amplifiers
Contextual Info: Advance Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology FMP26-02P P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns VDSS 43 ID25 T1 5 34 T2 11 22 Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings

RM338

Abstract: qfl 289 106N20 IXFK90N20
Contextual Info: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2

VQE 22

Contextual Info: Preliminary Data Sheet PD - 9.1085 International IsHRectifier IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400H z V CES = 1 200V

Contextual Info: FAN7842 Half-Bridge Gate Driver Features Description „ Floating Channels Designed for Bootstrap Operation The FAN7842, a monolithic half-bridge gate driver integrated circuit, can drive MOSFETs and IGBTs that operate up to +200V. Fairchild’s high-voltage process and

Contextual Info: Micro Gate Drive Transformers • Deliver MOSFET / IGBT gate power and timing signals simultaneously · Directly drive high-side MOSFETs / IGBTs on busses up to 200V · Excellent risetime, overshoot, and peak current characteristics Model Selection Table HiRel P/N

Gate Driver

Abstract: FAN7842 FAN7842M FAN7842MX JESD51-2 JESD51-3 JESD22A111
Contextual Info: FAN7842 High and Low Side Gate Driver Features Description „ Floating Channels Designed for Bootstrap Operation The FAN7842, a monolithic high and low side gate drive IC, which can drive MOSFETs and IGBTs that operate up to +200V. „ „ „ „ „ „ „ „

CM400DU-12NFH

Abstract: snubber igbt snubber igbt 300V 400A
Contextual Info: Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 CM400DU-12NFH Dual IGBTMOD NFH-Series Module 400 Amperes/600 Volts VCC = 300V VGE = 15V RG = 3.1Ω Tj = 25°C Inductive Load 101 103 102 (mJ/PULSE) off), ESW( VCC = 200V

Contextual Info: P D - 9.1030 International ioRRectîfier IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, V ge = 15V V CES = 1 200V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

C1030 transistor

Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
Contextual Info: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses

IXTR120P20T

Contextual Info: Preliminary Technical Information IXTR120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings

15N120C3

Abstract: TP15N120 15n120
Contextual Info: HAFRRIS HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1 200V, T c = 25°C The HGTG15N120G3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching

Contextual Info: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTR120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: IXFR120N20 HiPerFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   200V 105A  19.5m 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS

IXTR120P20T

Contextual Info: Advance Technical Information IXTR120P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: Advance Technical Information LinearL2TM Power MOSFET w/Extended FBSOA VDSS ID25 IXTK110N20L2 IXTX110N20L2 RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol = 200V = 110A Ω < 24mΩ TO-264 (IXTK) Test Conditions Maximum Ratings VDSS