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Contextual Info: P D - 9.1030 International ioRRectîfier IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, V ge = 15V V CES = 1 200V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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irgph50m10khzo-247acc-476 |
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IRGPH50M
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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D-10
Abstract: IRGPH50MD2 1838t
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf
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TRANSISTOR C483
Abstract: IRGPH50MD2
Contextual Info: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses
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irgph50md210khzo-247ac5sm52+2c-488transistor c483
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IRGPH50M
Abstract: C-471
Contextual Info: PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency
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C-473
Contextual Info: bitemational P D -9.1030 Rectifier IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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irgph50m10khzo-247acc-473 |
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IRGPH50M
Abstract: transistor BR 471 A
Contextual Info: PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency
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irgph50m10khzo-247acc-476+1transistor br 471 a
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1838 t
Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf
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irgph50md2c-4811838 t1838t+4ir 1838 tir 1838 t datasheetd-10c485
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1838t
Abstract: 1838 T D-10 IRGPH50MD2 C-483 C483 SE 135 N se 130 n
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1047A IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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irgph50md210khzo-247acc-488+71838t1838 td-10c-483c483se 135 nse 130 n
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1838T
Abstract: 1838 T TRANSISTOR C483 IRGPH50MD2
Contextual Info: PD - 9.1047A International iôr]Rectifier IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V Ces 1Short circuit rated -10[js @125°C, VGE= 15V 1Switching-loss rating includes all "tail" losses
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10khzirgph50md2c-487o-247ac+4c-4881838t1838 ttransistor c483
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IRGKI200F06
Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U
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irgb420uirgp420uirgb430uirgp430u+16irgbc20kirgpc20kirgbc20k-sirgbc20mirgbc20m-sirgpc20mirgki200f06irgnin150m06irgki120f06irgddn600m06irgki115u06irgbc20fd2irgtin025m12irgti140u06irgpc50uirgki165f06
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IRG4PH50KD
Abstract: IR 1838 T IRGPH50KD2 IRGPH50MD2 IR 1838 motor IG 2200 19 00001
Contextual Info: PD- 91575B IRG4PH50KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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91575birg4ph50kdchar20ir 1838 t+4irgph50kd2irgph50md2ir 1838motor ig 2200 19 00001
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TL 1838
Abstract: IRG4PH50KD
Contextual Info: International 1GR Rectifier PD- 9.1575 IRG4PH50KD PRELIM INARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc=10fis, V cc = 720V , T j = 125°C,
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Contextual Info: PD - 9.1576 International IOR Rectifier IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, ts C = 1 0 |J S , Vcc = 720V , T j = 125°C, V q e = 15V • Combines low conduction losses with high
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IRG4PH50K
Abstract: IRGPH50K IRGPH50M
Contextual Info: PD - 9.1576 IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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irg4ph50kirgph50kirgph50m |
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TRANSISTOR 9642
Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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t0247t0220irg4bc20firg4bc20fd+16irg4bc30firg4bc30fdirg4bc40firg4bc20uirg4bc20udirg4bc30utransistor 96429544 transistort0247 packagewhat is fast igbt transistorirg4pc50uequivalent transistors for irg4pc50uirg4bc20fd 600v 16 to220irgpc40uirg4ph50udirgb440u
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IRGKI200F06
Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications
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o-220abirg4bc40sirgbc20sirgbc30s+15irgbc40so-247acirg4pc40sirgpc30sirgpc40s10-30khzirgki200f06irgnin150m06irgti165f06irgbc20fd2irgki115u06irgti140u06irgph40fd2irg4bc30udirgni115u06
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9544 transistor
Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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t0247t0220assirg4bc20fdirg4bc30f+16irg4bc30fdirg4bc40firg4bc20uirg4bc20udirg4bc30uirg4bc30ud9544 transistortransistor 9642irg4pc50uirg4ph50udigbt failureirg4pc40ud2htgbirgph60ud2irgbc20fdrectifier igbt
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igbt 20A 1200v
Abstract: IRGCH50ME IRGPH50M
Contextual Info: PD-9.1420 TARGET IRGCH50ME IRGCH50ME IGBT Die in Wafer Form C 1200 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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z922
Abstract: IRG4PH50K 3020H
Contextual Info: International I«R Rectifier PD - 9 .1576 IRG4PH50K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, tsc=10fis, V cc = 720V , T j = 125°C, V g e = 15V • Combines low conduction losses with high
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IRGPH50MD2
Abstract: IRGPH50KD2 irgph50kd2 e 035H IRFPE30
Contextual Info: PD- 95189 IRG4PH50KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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irg4ph50kdpbfminimiirg4ph50kdpbfo-247acirfpe30+4irgph50md2irgph50kd2irgph50kd2 e035h
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IRGPH30M
Contextual Info: In te rn a tio n a l S U F te c tifie r IGBTs Fast IGBTs for Medium Frequency 3-10 kHz range Power Applications Short-Circuit Rated - Optimized for Motor Control Applications FAST (cont.) 'c Part Number Continuous Collector Current VCES Collector to Emitter
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irgddn300m06irgddn400m06irgddn600m06irgrdn300m06+7irgrdn400m06irgph30md2irgph40md2irgph50md2t0-247acirgkin025m12irgph30m
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IRG4PH50K
Abstract: IRGPH50K IRGPH50M
Contextual Info: PD - 9.1576 IRG4PH50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C ● High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V, TJ = 125°C, VGE = 15V ● Combines low conduction losses with high switching speed
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IRG4PH50KD
Abstract: IRGPH50KD2 IRGPH50MD2
Contextual Info: PD- 91575B IRG4PH50KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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91575birg4ph50kdchar52-7105irgph50kd2+1irgph50md2
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