|
GE1001
|
|
Harris Semiconductor
|
1.0A Iout, 50V Vrrm Fast Recovery Rectifier |
Scan |
PDF
|
93.85KB |
3 |
|
GE1001
|
|
Unknown
|
Shortform Data and Cross References (Misc Datasheets) |
Short Form |
PDF
|
37.94KB |
1 |
|
GE1001
|
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
85.55KB |
1 |
|
GE10015
|
|
General Electric
|
Power Transistor Data Book 1985 |
Scan |
PDF
|
381.75KB |
7 |
|
GE10015
|
|
Unknown
|
Semiconductor Master Cross Reference Guide |
Scan |
PDF
|
121.88KB |
1 |
|
GE10015
|
|
Unknown
|
Darlington Power Transistors |
Scan |
PDF
|
185.12KB |
1 |
|
GE10016
|
|
General Electric
|
Power Transistor Data Book 1985 |
Scan |
PDF
|
381.75KB |
7 |
|
GE10016
|
|
Unknown
|
Semiconductor Master Cross Reference Guide |
Scan |
PDF
|
121.88KB |
1 |
|
GE10016
|
|
Unknown
|
Darlington Power Transistors |
Scan |
PDF
|
185.12KB |
1 |
2N5401(RANGE:100-150)
|
|
JCET Group
|
PNP transistor in TO-92 package with collector-emitter voltage of -150 V, collector current of -0.6 A, and transition frequency up to 300 MHz, suitable for high-voltage switching and amplification applications. |
Original |
PDF
|
|
|
2N5551(RANGE:100-150)
|
|
JCET Group
|
NPN transistor in TO-92 package, rated for 160V collector-emitter voltage, 625mW power dissipation, with DC current gain up to 300 and transition frequency of 100MHz, suitable for general purpose switching applications. |
Original |
PDF
|
|
|