GE1001, Search Results
GE1001, Datasheets (11)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| GE1001 | Harris Semiconductor | 1.0A Iout, 50V Vrrm Fast Recovery Rectifier | Scan | 93.85KB | 3 | ||
| GE1001 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 37.94KB | 1 | ||
| GE1001 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 85.55KB | 1 | ||
| GE10015 |
|
Power Transistor Data Book 1985 | Scan | 381.75KB | 7 | ||
| GE10015 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 121.88KB | 1 | ||
| GE10015 | Unknown | Darlington Power Transistors | Scan | 185.12KB | 1 | ||
| GE10016 |
|
Power Transistor Data Book 1985 | Scan | 381.75KB | 7 | ||
| GE10016 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 121.88KB | 1 | ||
| GE10016 | Unknown | Darlington Power Transistors | Scan | 185.12KB | 1 | ||
2N5401(RANGE:100-150)
|
JCET Group | PNP transistor in TO-92 package with collector-emitter voltage of -150 V, collector current of -0.6 A, and transition frequency up to 300 MHz, suitable for high-voltage switching and amplification applications. | Original | ||||
2N5551(RANGE:100-150)
|
JCET Group | NPN transistor in TO-92 package, rated for 160V collector-emitter voltage, 625mW power dissipation, with DC current gain up to 300 and transition frequency of 100MHz, suitable for general purpose switching applications. | Original |
GE1001, Price and Stock
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