1SS2 Search Results

Contextual Info: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •

1SS294

Contextual Info: 1SS294 SILICON EPITAXIAL PLANAR TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Unit in mm . Low Forward Voltage V f =0 .54V Typ. . Low Reverse Current lR=5MA(Max.) . Small Package SC-59 +0.5 2.5 -0.3 +0.25 1.5-0.15 1 0.3 - MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

marking C3 sot-23

Contextual Info: 1SS226 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic

MARKING A7

Abstract: smd marking a7 SMD a7 Transistor smd a7 smd transistor A7 smd diode a7 A CLIPPER CIRCUIT APPLICATIONS 1SS223 marking 38 smd diode marking A7 SOT-23
Contextual Info: Diodes SMD Type SILICON SWITCHING DIODE 1SS223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High speed switching: trr = 3.0 ns MAX. 0.55 Low capacitance:Ct = 4.0 pF MAX. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1

Contextual Info: 1SS272 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS272 Unit: mm ○超高速度スイッチング用 z 順方向が良い。 : VF 3 = 0.92V (標準) z 逆回復時間が短い。 : trr = 1.6ns (標準) z 端子間容量が小さい。

Contextual Info: Product specification 1SS223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High speed switching: trr = 3.0 ns MAX. 0.55 Low capacitance:Ct = 4.0 pF MAX. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1

Contextual Info: Product specification 1SS294 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage: VF 3 = 0.54 V(Typ). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current: IR = 5

Contextual Info: TOSHIBA 1SS250 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS250 Unit in mm HIGH SPEED SW ITCHING APPLICATIONS. • Low Forward Voltage • Fast Reverse Recovery Time • Sm all Total Capacitance : C¡T = 1.5pF Typ. • Sm all Package : SC-59 + 0.5 2 . 5 - 0 .3

Contextual Info: TOSHIBA {DISCR ET E/ O PTO } Í? 9097250 TOSHIBA DISCRETE/OPTO ]>ÊJ^ 7 2 5 0 67C 0 9 3 4 9 000^34^ 7 f D Y - 0 1SS242 7 - 0 T Silicon EpitaxiaLSchottky Barrier Type Diode UHF BAND MIXER APPLICATIONS. Unit in mm + Q25 L5-Q15 / / 0.65 û6±ai MAXIMUM RATINGS (Ta=25°C)

1ss239

Contextual Info: b7 T O S H I B A -CDISCRETE/OPTOï ^1^0^7250 9097250 TOSHIBA DISCRETE/OPTO GD0T343 h 67C 0 9 3 4 3 D T - 0 7 <07 - 1SS239 Silicon Epitaxial Schottky Barrier Type Diode Unit in mm CATV/UHF/VHF MIXER APPLICATIONS. + Û25 L 5-Û 15 J - Nrt öd +l Q6 5 Q 6±ai

Contextual Info: 1SS269 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS269 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS + 0.5 2.5 “ 0.3 FEATURES : • Small Package. • Small Total Capacitance : CT = 1.2pF Max. • Low Series Resistance : rs = 0.6D (Typ.) 1.5- a i 5

ss295

Contextual Info: 1SS295 TO SHIBA TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr= 10mV Max. : ACT = 0.1pF(Max.) M A X IM U M RATINGS (Ta = 25°C)

toshiba diode 1A

Abstract: 1SS268 Toshiba MRI 1SS26
Contextual Info: 1SS268 TOSHIBA 1 SS268 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

ss295

Abstract: 1SS295 SS29
Contextual Info: TOSHIBA 1SS295 TOSHIBA DIODE UHF BAND MIXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr = 10mV Max. : AOr = 0.1pF (Max.) E +0.5 2.5-0.3

Contextual Info: 1SS294 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package : SC−59 Maximum Ratings (Ta = 25°°C) Characteristic

1S1555

Abstract: 1S1553 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555 1SS133 1N4148 1SS176
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N4148 1S SERIES 1SS SERIES SWITCHING DIODES 1. SWITCHING DIODES ABSOLUTE MAXIMUM RATINGS TYPE V RM V 1N4148 100 1S1553 70 1S1555 35 1SS133 90 1SS176 35 1SS270 30 V R (V) IF(mA) IO(mA) I FS(mA)1 Sec P(mw) 75 60 30 80 30 30 450 300

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: 1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application l Small package : SC-61 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)

1SS286

Contextual Info: 1SS286-Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features Outline • Very low reverse current. • Detection efficiency is very good. • Sm all glass package MHD enables easy mounting and high reliability.

ISV80

Abstract: 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34 1SV35
Contextual Info: 176 - - fe * m Vr r m £ V 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 ÄS ÄS ÄS 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 am um BM 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1S V 121 1S V 122 1SV128 1SV156 1 S V 157 1 SV 172 1 S V 178

1SV80

Abstract: 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34 1SV35
Contextual Info: 1 76 - - * m Vrrm V £ 1S 218 6 I S S I 55 1SS238 1SS241 1S S364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233

1SV196

Abstract: 1SV237 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34
Contextual Info: 176 - - * m Vrrm V £ 1S 218 6 I S S I 55 1SS238 1SS241 1S S364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233

1SV196

Abstract: 1sv128 1SV156 ISV80 MA555 1S2186 1SS238 1SS241 1SS364 1SV26
Contextual Info: - 176 - m £ 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233 1SV234 1SV246

0A90

Abstract: 2-1K261 1K188FM-1 lN34A 1s188fm 1K60 1K261 OA90-M OA90-G 1K110
Contextual Info: - * fi E fe R’ JAC B 1K 3 4A 1K60 1K90 1K110 1K188FM 1K188FM-1 1K261 1S744 1S745 1S746 1S747 1S748 1SS24 1SS25 1SS26 1SS27 1SS28 1SS 2 9 1SS30 1SS31 £ a £ 3 - '/ V 3 -'/V z .= .'/y * -'/y 3- — ' / V * = .'/y * .= .'/y a - ' / y = L ~ '/ y 3 .~ '/y