1SS30 Search Results

SS302

Contextual Info: 1SS302 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS302 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp 3 = 0.90V (Typ.)

smd diode a6

Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.

1SS300

Contextual Info: 1SS300 SILICON EPITAXIAL PLANAR T Y P E ULTRA HIGH SPEED SWITCHING APPLICATION. Small Package Unit in mm 21 ±0.1 SC-70 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 1.25 ± 0.1 VF=0.92V Typ. t r r = l . 6ns(T yp.) Ct = 2 . 2 p F ( T y p . )

marking A1

Abstract: 1SS308
Contextual Info: Diodes SMD Type Ultra High Speed Switching Applications 1SS308 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.92V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 2.2pF(typ.) 2 3 A bsolute M axim um R atings T a = 25

4558 dd

Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
Contextual Info: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300

Contextual Info: Product specification 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use. A b s o lu te M a x im u m R a tin g s T a = 2 5

Contextual Info: Product specification 1SS309 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.90V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 0.9pF(typ.) 2 3 Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage

Contextual Info: Product specification 1SS308 Unit: mm 4 5 Features Low forward voltage: VF 3 = 0.92V (typ.) Fast reverse recovery time:trr = 1.6ns(typ.) 1 Small total Capacitance:CT = 2.2pF(typ.) 2 3 A bsolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage

Contextual Info: Product specification 1SS301 Features Low forward voltage:VF 3 = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) Absolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol

Contextual Info: Product specification 1SS303 Features Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use. A b s o lu te M a x im u m R a tin g s T a = 2 5

1SS300

Contextual Info: 1SS300 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage : VF 3 = 0.92V (typ.) Unit: mm Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)

1SS302

Abstract: TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS
Contextual Info: 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications Small package : SC-70 Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)

Contextual Info: 1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm l Small package : SC-70 l Low forward voltage : VF 3 = 0.92 V (typ.) l Fast reverse recovery time : trr = 1.6 ns (typ.) l Small total capacitance : CT = 0.9 pF (typ.)

1SS309

Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

628B

Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
Contextual Info: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)

0A90

Abstract: 2-1K261 1K188FM-1 lN34A 1s188fm 1K60 1K261 OA90-M OA90-G 1K110
Contextual Info: - * fi E fe R’ JAC B 1K 3 4A 1K60 1K90 1K110 1K188FM 1K188FM-1 1K261 1S744 1S745 1S746 1S747 1S748 1SS24 1SS25 1SS26 1SS27 1SS28 1SS 2 9 1SS30 1SS31 £ a £ 3 - '/ V 3 -'/V z .= .'/y * -'/y 3- — ' / V * = .'/y * .= .'/y a - ' / y = L ~ '/ y 3 .~ '/y

1SS101

Abstract: 1SS101 DIODE Xin Semiconductor solar blocking diode 1SS201 1SS301 diode case R-1 1ss20
Contextual Info: 1SS101 THUR 1SS301 XIN SEMICONDUCTOR ISO9002 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES R-1 For general purpose applications These diodes features very low turn-on voltage and fastswitching. These devices are protected by a Pnjunction guard ring against excessive voltage, such as electrostatic

marking A14

Abstract: 1SS305
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS305 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODE FEATURES PACKAGE DIMENSIONS Unit: mm • Low capacitance: Ct = 4.0 pF MAX. • High speed switching: trr = 3.0 ns MAX. • Wide applications including switching, limitter, clipper.

JEDEC SC-70

Abstract: 1SS302
Contextual Info: 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications z Small package : SC-70 z Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)

SiS 6801

Abstract: 1SS305
Contextual Info: T — $ • y — N_ 7 .4 " ; 3 - > ? ÿ ' j 3 > Silicon Switching Diode 1SS305 i 7 J ls 7 t ° - K Silicon Epitaxial Diode High Speed Switching 4# • mm i t r IJ y K I C ffl t L T ^ i i T ’ -To -.m t) o § i Ä ^ $ l > o

1SS308

Contextual Info: TOSHIBA 1SS308 1 SS308 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-74A : V f 3 = 0.92V (Typ.)

1SS300

Contextual Info: TOSHIBA 1SS300 1 SS300 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITHING APPLICATION. • • • • Small Package Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vjt 3 = 0.92V (Typ.)

1SS306

Contextual Info: 1SS306 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS306 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. + 0.2 • • • • Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp 2 —0.90V (Typ.)

1SS302

Contextual Info: 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications z Small package : SC-70 z Low forward voltage : VF 3 = 0.90V (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)