SS29 Search Results

Contextual Info: SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •

ss295

Contextual Info: SS295 TO SHIBA TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr= 10mV Max. : ACT = 0.1pF(Max.) M A X IM U M RATINGS (Ta = 25°C)

ss295

Abstract: 1SS295 SS29
Contextual Info: TOSHIBA SS295 TOSHIBA DIODE UHF BAND MIXER APPLICATIONS. • • • 1 SS295 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Small Delta Forward Voltage Small Delta Total Capacitance Unit in mm : AVjr = 10mV Max. : AOr = 0.1pF (Max.) E +0.5 2.5-0.3

Contextual Info: SS29 & SS210 Vishay General Semiconductor High Voltage Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: SS29, SS210 www.vishay.com Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: SS29, SS210 www.vishay.com Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: SS293 TO SHIBA TO SHIBA DIODE 1 SS293 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5fuA (Max.) Small Package 0.55M A X CTl 1.27 1.27

JESD22-B102

Abstract: J-STD-002 SS210 SS29
Contextual Info: SS29 & SS210 Vishay General Semiconductor High Voltage Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: 6ENL INSTR/ PO WE R 3flE D • BÛ'iDia? 0G047CJ3 M M ü I C T-03-15 .P * R » E * L * I » I VI ♦ l » I M * A » R » Y » ♦ ♦ • • ♦ SS29 AND SS2B SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 90 and 100 Volts CURRENT - 2.0 Amperes

Contextual Info: SS29, SS210 www.vishay.com Vishay General Semiconductor High Voltage Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

1SS291

Abstract: 1SS292 ROHM 1SS292
Contextual Info: SS290/SS291 /SS292 $ ' ' i ^ — K /D iodes - r — 's+ A V t^ V S » ^ A>4 SS290/SS291 /1 SS292 Silicon Epitaxial Planar Low-Leakage Switching Mini-Diodes 1 'h f 7 ^ 7 DSiSJi A • Ü / D i m e n s i o n s ( U n it : m m ) • t i V — K / ' i > K f e g y / C a t h o d e B a n d C o lo r

1SS294

Contextual Info: TOSHIBA SS294 TOSHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. • • • + 0.5 2.5 -0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-59

Contextual Info: SS29 and SS210 High Voltage Surface Mount Schottky Rectifier Reverse Voltage 90 to 100V Forward Current 1.5A DO-214AA SMB Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) ct u d ro P New Mounting Pad Layout 0.106 MAX (2.69 MAX) 0.180 (4.57)

Contextual Info: SS29 and SS210 High Voltage Surface Mount t Schottky Rectifier c u d o r P New DO-214AA SMB Reverse Voltage 90 to 100V Forward Current 1.5A Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.106 MAX (2.69 MAX) Dimensions in inches

JESD22-B102D

Abstract: J-STD-002B SS210 SS29
Contextual Info: SS29 & SS210 Vishay General Semiconductor High Voltage Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: SS29 & SS210 Vishay General Semiconductor High Voltage Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 2.0 A VRRM 90 V, 100 V IFSM 75 A VF 0.71 V Tj max. 150 °C DO-214AA (SMB) Features Typical Applications • • • • • •

1SS293

Contextual Info: TOSHIBA SS293 TOSHIBA DIODE 1 SS293 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. 4 .2 M A X • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 /j A (Max.) Small Package 0 .5 5 M A X

SN-065

Abstract: samwha op core OPS18 or19 OR34 OP28 OP11 OP12 OP14 SS29
Contextual Info: SAMWHA ELECTRONICS EMC CORES OP1.6~OP28, OR9.5~OR34.8 OPS18.4~OPS22 SS29~SS35 Ordering Code System SN-065 Material Core Type OP 1.6x5-0.8H Core Size 137 v 138 SAMWHA ELECTRONICS OP CORES OP Core Set Parameters Dimensions in mm Part No. Type A B OP1.6×5-0.8H

Contextual Info: SS29 & SS210 Vishay General Semiconductor High Voltage Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: SS29 and SS210 High Voltage Surface Mount Schottky Rectifier Reverse Voltage 90 to 100V Forward Current 1.5A DO-214AA SMB Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) ct u d ro P New Mounting Pad Layout 0.106 MAX (2.69 MAX) 0.180 (4.57)

Contextual Info: SS29, SS210 www.vishay.com Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: SS29 and SS210 Vishay Semiconductors New Product formerly General Semiconductor High Voltage Surface Mount Schottky Rectifier DO-214AA SMB Reverse Voltage 90 to 100V Forward Current 1.5A Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) Mounting Pad Layout

Contextual Info: SS294 TO SHIBA TOSHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. + 0.5 2.5-0.3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 • • •

Contextual Info: SS29 & SS210 Vishay General Semiconductor High Voltage Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop