SS35 Search Results

Contextual Info: TOSHIBA SS357 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS357 LO W VOLTAGE HIGH SPEED SWITCHING. Unit in mm Low Forward Voltage VF 3 = 0.54 (Typ.) Low Resistance Current I r = £>/“A (Max.) Small Package SC-70 il ¥ I 0 + 0 . 05 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: Installation Instructions for the SS351AT/SS451A/SS551AT Omnipolar Digital Hall-Effect Sensor ICs GENERAL INFORMATION The SS351AT, SS451A and SS551AT are omnipolar devices, meaning that they may be turned on output low by either a North pole or a South pole. The device will turn off (output

Contextual Info: MCL-SS352 SILICON EPITAXIAL PLANAR DIODE LS-31 Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications Extreme fast switches Absolute Maximum Ratings Tj = 25OC Parameter Symbol Value Unit

Contextual Info: Common mode SS Coils SS35V/35H Type [RoHS [RoHS Compliant] Compliant] Rated current AC A 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Model SS35V/H-15300 SS35V/H-20170 SS35V/H-25090 SS35V/H-30082 SS35V/H-35047 SS35V/H-40033 SS35V/H-45022 DC resistance (⏲/line) max. 0.48

ss355

Abstract: micromelf
Contextual Info: MCL-SS355 SILICON EPITAXIAL PLANAR DIODE High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • High Speed trr = 1.2ns Typ. • High reliability with high surge current handling capability. Absolute Maximum Ratings (Ta = 25oC)

rl 724 n

Abstract: ss355 DSA00422881.txt
Contextual Info: MCL-SS355 SILICON EPITAXIAL PLANAR DIODE High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • High Speed trr = 1.2ns Typ. • High reliability with high surge current handling capability. Absolute Maximum Ratings (Ta = 25oC)

SS351AT

Abstract: SS451A SS451 water flow sensor sot package
Contextual Info: DESCRIPTION The SS351AT and SS451A sensors are small, versatile digital These sensors are available in two package styles. The Hall-effect devices that are operated by the magnetic field from SS351AT is available in the subminiature SOT-23 surface a permanent magnet or an electromagnet. They are designed

Contextual Info: Common mode SS Coils SS35V/35H Type [RoHS [RoHS Compliant] Compliant] Rated current AC A 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Model SS35V/H-15300 SS35V/H-20170 SS35V/H-25090 SS35V/H-30082 SS35V/H-35047 SS35V/H-40033 SS35V/H-45022 DC resistance (⏲/line) max. 0.48

45022

Contextual Info: Common mode SS Coils SS35V/35H Types Rated current AC A 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Model SS35V/H-15300 SS35V/H-20170 SS35V/H-25090 SS35V/H-30082 SS35V/H-35047 SS35V/H-40033 SS35V/H-45022 DC resistance (⏲/line) max. 0.48 0.28 0.20 0.15 0.10 0.08 0.06 Inductance

2N6603

Abstract: 2n6603 transistor
Contextual Info: 2N6603 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: PACKAGE STYLE SS35 The ASI 2N6603 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications. FEATURES INCLUDE: • NF = 2.9 dB Typical @ 2 GHz • GP = 11 dB Typical @ 2 GHz • Hermetic Metal Ceramic Package

Contextual Info: SS32, SS33, SS34, SS35, SS36 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: コモンモード SSコイル SS35V/35Hタイプ ［RoHS指令適合］ ［RoHS指令適合］ SS Coils SS35V/35H Type 1.5 2.0 2.5 3.0 3.5 4.0 4.5 SS35V/H-15300 SS35V/H-20170 SS35V/H-25090 SS35V/H-30082 SS35V/H-35047 SS35V/H-40033 SS35V/H-45022 直流抵抗

Contextual Info: Common mode SS Coils SS35V/35H Type [RoHS [RoHS Compliant] Compliant] Rated current AC A 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Model SS35V/H-15300 SS35V/H-20170 SS35V/H-25090 SS35V/H-30082 SS35V/H-35047 SS35V/H-40033 SS35V/H-45022 DC resistance (⏲/line) max. 0.48

Contextual Info: MCL-SS352 SILICON EPITAXIAL PLANAR DIODE LS-31 Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications Extreme fast switches Absolute Maximum Ratings Tj = 25OC Parameter Symbol Value Unit

SS451A

Abstract: SS351AT
Contextual Info: Installation Instructions for the SS351AT and SS451A Series Omnipolar Hall-Effect Digital Position Sensors GENERAL INFORMATION The SS351AT and SS451A are omnipolar, meaning that they may be operated by either a North pole or a South pole. They will turn off when the magnetic field is removed.

Contextual Info: SS3503 Linear Hall Effect Sensor Features ─ ─ ─ ─ ─ ─ Miniature construction Low-Noise Output 4.5 V to 6 V Operation Magnetically Optimized Package Linear output for circuit design flexibility Temperature range of -40 °C to 150 °C 3 Pin SIP（suffix UA）

SN-065

Abstract: samwha op core OPS18 or19 OR34 OP28 OP11 OP12 OP14 SS29
Contextual Info: SAMWHA ELECTRONICS EMC CORES OP1.6~OP28, OR9.5~OR34.8 OPS18.4~OPS22 SS29~SS35 Ordering Code System SN-065 Material Core Type OP 1.6x5-0.8H Core Size 137 v 138 SAMWHA ELECTRONICS OP CORES OP Core Set Parameters Dimensions in mm Part No. Type A B OP1.6×5-0.8H

Contextual Info: ALN64535 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ALN64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. FEATURES INCLUDE: PACKAGE STYLE SS35 • NF = 1.6 dB Typical @ 2 GHz • S21 2 = 11 dB Typical @ 2 GHz

SS355

Abstract: TA12100
Contextual Info: MCL-SS355 SILICON EPITAXIAL PLANAR DIODE High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • High Speed trr = 1.2ns Typ. • High reliability with high surge current handling capability. Absolute Maximum Ratings (Ta = 25oC)

ss355

Abstract: 1N 2002 diode
Contextual Info: MCL-SS355 SILICON EPITAXIAL PLANAR DIODE High-speed Switching Applications LS-31 Features • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package • High Speed trr = 1.2ns Typ. • High reliability with high surge current handling capability. Absolute Maximum Ratings (Ta = 25oC)

Contextual Info: MCL-SS352 SILICON EPITAXIAL PLANAR DIODE LS-31 Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications Extreme fast switches Absolute Maximum Ratings Tj = 25OC Parameter Symbol Value Unit

Contextual Info: MCL-SS352 SILICON EPITAXIAL PLANAR DIODE LS-31 Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications Extreme fast switches Absolute Maximum Ratings Tj = 25OC Parameter Symbol Value Unit

smc diode marking s6 vishay

Contextual Info: SS32-M3, SS33-M3, SS34-M3, SS35-M3, SS36-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: Common mode SS Coils SS30V Type [RoHS [RoHS Compliant] Compliant] <Features> ･ ･ ･ ･ High inductance yet compact design enables replacement for SS35V-type and SS28V-type Approx. 36% reduced volume and covers approx. 60 to 100% inductance compared with SS35V-type.