1N5421-1N5425
Abstract: 1N5718 1N5421 1N5425 tt5200 IN5421 IN5425 IN5717 1N5717 1N5715
Contextual Info: TELEDVNE COMPONENTS SÖE D flilT b Q S 1N5/14 1N5715 4N5716 1N5717 1N5718 HIGH-Q-HIGH VOLTAGE-HIGH CAPACITANCE SILICON EPITAXIAL VARACTRON VOLTAGE-VARIABLE CAPACITANCE DIODES Electrically Equivalent to 1N5421-1N5425 GEOMETRY 417 or 419, GEOMETRY 419 or 423, GEOMETRY 423 or 418
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1n57141n57154n57161n5717+91n57181n5421-1n54251n57161n54211n5425tt5200in5421in5425in5717
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1N5421
Abstract: 1N5425 1N5716 1N5718 1N5717
Contextual Info: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 1N5714 1N5715 1N5716 1N5717 1N5718 HIGH-Q-HIGH VOLTAGE-HIGH CAFACITANCE . SILICON EPITAXIAL VARACTRON VOLTAGE-VARIABLE CAPACITANCE DIODES Electrically Equivalent to 1N5421 -1N5425 « a S T Æ » 419-QEOMETRY419 or 423, GEOMETRY 423 or 418
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1n5421-1n5425419-qeometry4191n5714+51n57151n57161n57171n57181n5425
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1N5421
Contextual Info: 1N5421 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.150p C1/C2 Min. Capacitance Ratio5.8 V(RRM)(V) Rep.Pk.Rev. Voltage200 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W).25 Semiconductor MaterialSilicon Package StyleAxial-8
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E162344
Abstract: ee25 transformer TOP224 1N5421 PWR-TOP224P EE2425 TOP224P TSD-1405 1N5421B FEE-25
Contextual Info: TABLE 1: ELECTRICAL SPECIFICATIONS AT 25 OC FIGURE 1: SCHEMATIC DIAGRAM SWITCHING TRANSFORMER DESIGNED FOR USE WITH POWER INTEGRATIONS TOP224P. REFER TO APPLICATION CIRCUIT OF FIGURE 3. PARAMETER MIN. PRIMARY INDUCTANCE 4-3 VOLTAGE = 0.250Vrms FREQUENCY = 100 KHZ
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op224p250vrmspwr-top224p250vac+91n5421btsd-1405e162344ee25 transformertop2241n5421ee2425top224pfee-25
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EE2425
Abstract: POL-12017 top224p EE24-25 TOP224 EE25 bobbin 1N5421B ee25 transformer FEI25 PWR-TOP224P
Contextual Info: TABLE 1: ELECTRICAL SPECIFICATIONS AT 25 O C FIGURE 1: SCHEMATIC DIAGRAM SWITCHING TRANSFORMER DESIGNED FOR USE WITH POWER INTEGRATIONS TOP224P, IS T1 ON RD5 DEMO BOARD . REFER TO APPLICATION CIRCUIT OF FIGURE 3. PARAMETER MIN. PRIMARY INDUCTANCE (2-1) VOLTAGE = 0.250Vrms
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op224p250vrmsvtp-0100250sq100+13pmcu-022022mhypol-1201710uhyee2425top224pee24-25top224ee25 bobbin1n5421bee25 transformerfei25pwr-top224p
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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