IN5712
Abstract: 0265006
Contextual Info: BL GALAXY ELECTRICAL IN5712 VOLTAGE RANGE: 20 V Ptot: 430 mW SMALL SIGNAL SCHOTTKY DIODES FEATURES Metal-to-silicon junction DO - 35 GLASS High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection
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IN5711
Abstract: in5711 equivalent
Contextual Info: BL GALAXY ELECTRICAL IN5711 VOLTAGE RANGE: 60 CURRENT: 400 mW SMALL SIGNAL SCHOTTKY DIODES FEATURES DO - 35 GLASS For general purpos e applications Metal s ilicon s chottky barrier device which is protected by a PN junction guard ring. The low forward voltage
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in5711do--35in5711 equivalent |
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diode 5082-3080
Abstract: 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711
Contextual Info: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications
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1n57111n57125082-xxxx5968-4304e+9diode 5082-30805082-28045082-2835diode 5082-2800 datasheetin57121n5712 spiceir 10e5082-2810f 5082
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IN5717
Abstract: IN5718 IN5714 7C3 diode IN5421
Contextual Info: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X
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100pfcv830-cv840mv830-mv84gcv1006-16-cv1106-16+11fv1006-16fv1106-16cv1620-cv1650mv1620-mv1650cv1652-cv1666mv1652-mv1666in5717in5718in57147c3 diodein5421
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diode hp 2835 schottky
Abstract: diode hp 2900 5082-2912 5082-2800 HP2811 UHF schottky diode 5082-2970 diode hp 5082-2080 1N5711
Contextual Info: WEM HEW LETT 1 itiM PACKARD Schottky Barrier Diodes fo General Purpose Application Technical Data Features • Low Tum-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available
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1n57111n57125082-xxxx5965-8844e+95966-0930ediode hp 2835 schottkydiode hp 29005082-29125082-2800hp2811uhf schottky diode5082-2970diode hp 5082-2080
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IN5711
Abstract: AD8641 AD8642 AD8643 AD8663 AD8667 AD8669 AD8682 ADA4062 ADA4062-2
Contextual Info: Low Power JFET-Input Op Amps ADA4062-2/ADA4062-4 PIN CONFIGURATIONS Low input bias current: 50 pA maximum Offset voltage 1.5 mV maximum for B grade ADA4062-2 SOIC package 2.5 mV maximum for A grade Offset voltage drift: 5 V/°C typical Slew rate: 3.3 V/μs typical
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ada4062-2/ada4062-4ada4062-210-lead14-lead+1016-leadin5711ad8641ad8642ad8643ad8663ad8667ad8669ad8682ada4062
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DAC10
Abstract: DAC10FX DAC10BX
Contextual Info: a 10-Bit High Speed Multiplying D/A Converter Universal Digital Logic Interface DAC10* All DAC10 series models guarantee full 10-bit monotonicity, and nonlinearities as tight as +0.05% over the entire operating temperature range are available. Device performance is essentially unchanged over the ± 18 V power supply range, with
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10-bitdac10e10-bitdac10bx+3dac10bx/883cdac10fxdac10gp
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DAC10FX
Abstract: C3134 in5711 equivalent DAC10
Contextual Info: DAC10–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol @ VS = ؎15 V; IREF = 2 mA; 0؇C ≤ TA ≤ +70؇C for DAC10F and G, unless otherwise noted. Output characteristics apply to both IOUT and IOUT. Conditions Min MONOTONICITY DAC10F Typ Max
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dac1018-leadc3134dac10fx+1in5711 equivalent
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I-3080
Contextual Info: GLASS PACKAGED PIN DIODES FOR RF SWITCHING AND ATTENUATING metelics CORPORATION 1 FEATURES • Low Series Resistance • Low C apacitance • Fast Switching and Current Controlled Attenuator Types • Controlled Resistance Curves M AXIM UM RATINGS Total Power Dissipation . . . . 2 5 0 m W a t + 2 5 ° C
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mpn-4166i-3080 |
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IR 10e
Abstract: HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800
Contextual Info: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications
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1n57111n57125082-xxxxir 10e+7hp2.811in5712diode 10e1n5712 spicers-296-d5082-2811diode 5082-2800
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MMD0840
Abstract: fs r6a CIRCUIT DIAGRAM IN5711 vishay LIMITING INRUSH CURRENT mosfet LTC6910-1 coiltronics ctx02-13664 MMD-0840 CTX02-13664 LTC3439 mmd series mosfets
Contextual Info: LINEAR TECHNOLOGY VOLUME XII NUMBER 4 DECEMBER 2002 COVER ARTICLE Ideal Diode Controller Eliminates Energy Wasting Diodes in Power OR-ing Applications . 1 David Laude Issue Highlights . 2 LTC in the News . 2
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400mhzot-23s-191mmd0840+9fs r6a circuit diagramin5711 vishaylimiting inrush current mosfetltc6910-1coiltronics ctx02-13664mmd-0840ctx02-13664ltc3439mmd series mosfets
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cb142
Contextual Info: Dual/Quad, Low Power, High Speed JFET Operational Amplifiers OP282/OP482 Active filters Fast amplifiers Integrators Supply current monitoring GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew
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IN5711
Abstract: OP282G OP282 OP482 OP-482 OP282GS
Contextual Info: Dual/Quad Low Power, High Speed JFET Operational Amplifiers OP282/OP482 PIN CONNECTIONS 1 8 V+ –IN A 2 7 OUT B +IN A 3 6 –IN B V– 4 5 +IN B GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew
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IN5712
Abstract: 1N5711 1N5712 N5712 1N5712 spice 5082-xxxx 5082282
Contextual Info: Sc ho t t k y Ba r r ier Dio d es fo r Gener a l Pu r p o se Ap p lic a t io ns Tec hnic a l Da t a Fea t u r es ¥ Lo w Tu r n-On Vo lt a g e As Lo w a s 0.34 Va t 1 m A ¥ Pic o Sec o nd Sw it c hing Sp eed ¥ H ig h Br ea k d o w n Vo lt a g e U pt o 70 V
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HP 5082-3081
Abstract: diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
Contextual Info: H E W L E T T P A CK A RD COMPONENTS 5082 3001/02 HPND-4165/66 5082-3039 1N5719 5082-3042/43 5082-3077 5082-3080 (1N5767) 5082-3081 5082-3168/88 PIN DIODES FOR RF SWITCHING AND ATTENUATING Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE
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hpnd-4165/661n57191n5767curr080+10in5719hp 5082-3081diode 5082-3168hpnd-4165hp 5082-3168vhf antenna mtbfhp 30425082-3168diode 5082-30015082-3042
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IN5711
Abstract: in5711 equivalent JESD51-9 OP282 OP482 OP-482 OP482A OP282GSZ-REEL7
Contextual Info: Dual/Quad, Low Power, High Speed JFET Operational Amplifiers OP282/OP482 Active filters Fast amplifiers Integrators Supply current monitoring GENERAL DESCRIPTION The OP282/OP482 dual and quad operational amplifiers feature excellent speed at exceptionally low supply currents. The slew
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op282/op48214-ball14-leadin5711+7in5711 equivalentjesd51-9op282op482op-482op482aop282gsz-reel7
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gold metal detectors
Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
Contextual Info: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes. The
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an98826/ibgold metal detectorsin5711+8in5711 equivalentdiode ring mixerpn junction diode oscillatormetal detectordoppler radarp-n junction diodedigital metal detectorsilicon point contact mixer diodes
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dac10
Abstract: DAC10FX 2n918 die dac10bx
Contextual Info: a 10-Bit High Speed Multiplying D/A Converter Universal Digital Logic Interface DAC10* All DAC10 series models guarantee full 10-bit monotonicity, and nonlinearities as tight as +0.05% over the entire operating temperature range are available. Device performance is essentially unchanged over the ± 18 V power supply range, with
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10-bitdac10dac10fx2n918 die+1dac10bx
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1N5767
Abstract: 5082-XXXX
Contextual Info: Thol mLUM PIN Diodes for RF Switching and Attenuating Technical Data Features • • • • Low Harmonic Distortion Large Dynamic Range Low Series Resistance Low Capacitance Description/Applications These general purpose switching diodes are intended for low
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IN5711
Abstract: melf Schottky glass jan In5711 SCHOTTKY DIODE SOD-80 JANTX
Contextual Info: SCHOTTKY BARRIER DIODES metelics FOR GENERAL PURPOSE APPLICATIONS CORPORATION FEATURES • High Breakdown Voltage to 70 Volts • Available in Chips, Glass Package Or Double Slug Melf Package • 1N5711 Available in JAN, JANTX and JANTXV • Packages Metallurgical^ Bonded
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1n5711cd5711cd5712cd2810+9dsb5712dsb2810cdll5711cdll5712cdll2810in5711melf schottky glassjan in5711schottky diode sod-80 jantx
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IN5708
Abstract: IN5704 IN5689
Contextual Info: K n o x S e m ic o n d u c t o r , IN C . GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5681 TO 1N5710 TYPE NUMBER CAPACITANCE @ - 4Vdc 1 MHz pF MIN QUALITY FACTOR Q - 4Vdc F = 50 MHz CAPACITANCE RATIO 2V /40V 4V / 60V MW TYP MIN TYP 3.1 3.1 1N5683 1N5684 1N5685
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1n56811n57101n56821n5683+81n56841n56851n56861n56871n5688in5708in5704in5689
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1N5767
Abstract: IN5719 1nxxxx diode 5082-XXXX
Contextual Info: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF
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1n57191n57671n57125082-3xxx+7t25/1n57xx1n57xx5082-3xxx/5968-7182enin57191nxxxx diode5082-xxxx
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IN5711
Abstract: AD8682 AD8684 DAC8408 RU-14
Contextual Info: Dual/Quad Low Power, High Speed JFET Operational Amplifiers AD8682/AD8684 APPLICATIONS Portable telecommunications Low power industrial and instrumentation Loop filters Active and precision filters Integrators Strain gauge amplifiers Portable medical instrumentation
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hp 3077
Abstract: HP 5082-3188 hp pin diode 5082-3081 hp 3080 diode 1N5767 IN5719 HP 5082-3379 diode hp 3039 1N5719 RS-296-D
Contextual Info: PIN Diodes for RF Switching and Attenuating Technical Data Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications
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5966-0941e5967-5812ehp 3077hp 5082-3188+8hp pin diode 5082-3081hp 3080 diode1n5767in5719hp 5082-3379diode hp 30391n5719rs-296-d
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