5082282 Search Results

diode 5082-3080

Abstract: 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711
Contextual Info: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications

diode hp 2835 schottky

Abstract: diode hp 2900 5082-2912 5082-2800 HP2811 UHF schottky diode 5082-2970 diode hp 5082-2080 1N5711
Contextual Info: WEM HEW LETT 1 itiM PACKARD Schottky Barrier Diodes fo General Purpose Application Technical Data Features • Low Tum-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available

IR 10e

Abstract: HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800
Contextual Info: Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications

Contextual Info: 5082-2827 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq2.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0 Maximum Conversion Loss (dB)4.6

5082-2815

Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
Contextual Info: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*

5082-2815

Contextual Info: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

5082-2080

Abstract: 5082-2826 5082-2835 MTTF 5965-8870E Y2272 DOD-HDBK-1686
Contextual Info: Passivated General Purpose Schottky Diodes Reliability Data The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the 1N5711/12 5082-2800/04/05

HP5082-2750

Abstract: 5082-2750 square-law video Log Amplifier detector 18 GHz flicker meter K623
Contextual Info: Schottky Barrier Diode Video Detectors Application Note 923 I. Introduction This Application Note describes the characteristics of Hewlett-Packard Schottky Barrier Diodes intended for use in video detector or video receiver circuits, and discusses some design features of such circuits.

5082-2824

Abstract: 5082282
Contextual Info: 5082-2824 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2824 is a Silicon Small Signal Schottky Diode Designed for UHF/VHF Mixers, and Video Detector Applications. Color Band Indicates Cathode. RF Parameters are Sample Tested. MAXIMUM RATINGS

5082-2815

Abstract: 5082-2370 1n5712 5082-2813 150 AVP 5082-2800 diode 5082-2800 1N5711 5082-2811
Contextual Info: Ihp% 1"KM Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/

1N5712 spice

Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented

5082-2815

Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
Contextual Info: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

ic 5082

Abstract: TC 5082 P 5082-275 5082-2824 2824I
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D • 44475ÖM ODOTbSS 881 «HPA W h a t HEWLETT IL 'ttM PACKARD S ch ottk y B arrier D iod es for D etectors Technical Data 5082-2750/51 5082-2755 5082-2787 5082-2824 Features • Improved D etection Sensitivity TSS of -55 dBm a t 10 GHz

IN5712

Abstract: 1N5711 1N5712 N5712 1N5712 spice 5082-xxxx 5082282
Contextual Info: Sc ho t t k y Ba r r ier Dio d es fo r Gener a l Pu r p o se Ap p lic a t io ns Tec hnic a l Da t a Fea t u r es ¥ Lo w Tu r n-On Vo lt a g e As Lo w a s 0.34 Va t 1 m A ¥ Pic o Sec o nd Sw it c hing Sp eed ¥ H ig h Br ea k d o w n Vo lt a g e U pt o 70 V

diode hpa 2800

Abstract: 5082-2815 1N5712 B2B diode 5082-2805 5082-2997 5082-2804 5082-2800 5082-2301
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D • 4447564 QQOIbeb 7ST * H P A Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V

1N5712

Abstract: 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice
Contextual Info: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2800 5082-2800 High breakdown general purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-28xx family are passivated Schottky barrier diodes which use a patented guard-ring

5082-2811

Contextual Info: warn H EW L E T T m¡3¡M PA CK A R D Schottky Barrier Diodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 niA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

diode hp 2835 schottky

Abstract: diode hp 2811 HP 5082-2900 IN5711 hp2811 hp 5082-2900 diode diode hp 2800 hp 5082-2800 diode diode hp 5082-2080 diode hp 2900
Contextual Info: m H EW LETT PA CK A RD S c h o ttk y B arrier D io d e s for G en eral P u rp ose A p p lic a tio n s Technical Data F eatures • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico S econ d Sw itching Speed • High Breakdow n Voltage Up to 70 V • M atched C haracteristics

IAM-81008

Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
Contextual Info: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101

5082-2811

Contextual Info: What HEWLETT* mLliM PA C K A R D Schottky Barrier D iodes for General Purpose Applications Technical Data Features • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Sw itching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics

5082-2826

Contextual Info: 5082-2826 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB) Maximum Conversion Loss (dB)

Contextual Info: 5082-2824 Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandD-J Test Freq2.0G Frequency Min. (Hz)1.0G Frequency Max. (Hz)15G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit

diode hp 5082-2751

Abstract: MIL-STD-750 METHOD 2036 5082-2824 5082-2750 5082 schottky
Contextual Info: What H E W LE T T PACKARD Schottky Barrier Diodes for Detectors Technical Data Features • Improved Detection Sensitivity TSS of-55 dBm at 10 GHz • Low 1/f Noise Typical Noise-Temperature Ratio = 4 dB at 1 kHz • High Peak Power Dissipation 4.5 W RF Peak Pulse Power