1N4151 PH Search Results
1N4151 PH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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1N4150
Abstract: 1N4151 MAM246 1n4150 philips
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M3D176 1N4150; 1N4151 DO-35) 1N4150 1N4151 115002/03/pp8 MAM246 1n4150 philips | |
1N4150
Abstract: 1N4151 1N4150 Philips 1N4153 MAM246
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M3D176 1N4150; 1N4151; 1N4153 DO-35) 1N4150, 1N4151, 1N4150 1N4151 1N4150 Philips 1N4153 MAM246 | |
1N4150
Abstract: 1N4151 1N4153 1n4150 philips MAM246
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M3D176 1N4150; 1N4151; 1N4153 DO-35) 1N4150, 1N4151, 1N4150 1N4151 1N4153 1n4150 philips MAM246 | |
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Contextual Info: DIGITRON SEMICONDUCTORS 1N4149, 1N4151-1N4154, 1N4446-1N4449 SWITCHING RECTIFIER MAXIMUM RATINGS @ 25°C Parameter Symbol 1N4149 1N4151 1N4152 1N4153 VRM 75V 75V 40V 75V Peak reverse voltage Average rectified current IO Forward surge current, 8.3ms Operating junction temperature range |
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1N4149, 1N4151-1N4154, 1N4446-1N4449 1N4149 1N4151 1N4152 1N4153 1N4154 1N4447 1N4448 | |
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Contextual Info: SCS WILLAS 1N4151 1N4151 SIGNAL DIODE Pb Free Product Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated .012 .022 0.55 .018(0.45) .076 (1.95) .100 (2.55) C .059 (1.5) .087(2.2) .067(1.7) |
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1N4151 1N4151 DO-35) DO-35 OD-323 SC-76) 100Forward 100mA 1N4151) | |
1N4150
Abstract: 1N4153 1N4153-1 1N4151
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OCR Scan |
1N4150; 1N4151; 1N4153 1N4150 1N4151, 1N4153 DO-35) 1N4150: 1N4151 1N4153-1 | |
1N4148 DO-34
Abstract: 1N4532 BB112 vhf diode BB212 bb809 BB910 SOD-69 1N4148 1N4149
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OCR Scan |
1N914 DO-35 1N914A 1N914B 1N916 1N916A 1N4148 DO-34 1N4532 BB112 vhf diode BB212 bb809 BB910 SOD-69 1N4148 1N4149 | |
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Contextual Info: N AUER PHILIPS/DISCRETE 5SE D U bbSBIBl OOlbiafi 3 • T ' O ^ - O 0! Small Signal Devices SWITCHING DIODES PRO TYPE 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N 4446 1N 4448 1N 4449 1N4531 1N 4532 BAS11 BAV10 BAV18 BAV19 BAV20 |
OCR Scan |
1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 | |
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Contextual Info: 1N4150 1N4151 1N4153 b b S B ' m D02b^03 202 H A P X N AUER PHILIPS/DISCRETE b^E D _X' V ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. The IN4150 is primarily intended for general purpose use in computer and industrial applications. |
OCR Scan |
1N4150 1N4151 1N4153 DO-35 IN4150 IN4151 IN4153 N4150 IN4151 IN4153 | |
1n4148-phi
Abstract: 1n4148ph AAP153 BA479 BA482 BAS32 1N4148 minimelf 1N4148 1N4151 BAS216
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OCR Scan |
BA479 BA482 1N4151 1N4148 1N4148-PHI 1N4448 1N914 AAP153 TMMBAT42 TMMBAT43 1n4148ph BAS32 1N4148 minimelf BAS216 | |
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Contextual Info: Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151 FEATURES DESCRIPTION • H erm etically sealed leaded glass S O D 27 D O -35 package The 1N 4150 and 1N 4151 are high-speed sw itching diodes fabricated in planar technology, and encapsulated in herm etically sealed leaded glass S O D 27 |
OCR Scan |
1N4150; 1N4151 MAM246 | |
1N4151Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 1N4151 Features • • • Low Current Leakage Compression Bond Construction Low Cost 500mW 75 Volt Silicon Epitaxial Diode Maximum Ratings • • • DO-35 Operating Temperature: -55°C to +150°C |
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1N4151 500mW DO-35 1N4151 | |
SL415Contextual Info: HIGH SPEED SWITCHING DIODES 250mW/500mW DO-35 CASE 28 SURGE PART NUMBER •■■■ Peak Reverse voltage VRM 1N914 :,:v -v 100 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454 Forwan Voltage wmmm» % 75 75 75 75 50 50 25 75 50 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 |
OCR Scan |
250mW/500mW DO-35 1N914 1N914A 1N914B 1N4148 1N4150 1N4151 1N4154 1N4448 SL415 | |
d1n914
Abstract: bb204b BAV10
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OCR Scan |
DO-35 d1n914 bb204b BAV10 | |
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Contextual Info: MCC TM Micro Commercial Components Features • • • • 1N4151 1N4154 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Planar Passivated Metallurgically bonded Construction Moisture Sensitivity Level 1 |
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1N4151 1N4154 500mW DO-35 1N4154 | |
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Contextual Info: MCC TM Micro Commercial Components 1N4151 1N4154 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features l Planar Passivated l Metallurgically bonded Construction l Moisture Sensitivity Level 1 |
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1N4151 1N4154 500mW DO-35 1N4154 | |
1N4151Contextual Info: MCC TM Micro Commercial Components Features • • • • 1N4151 1N4154 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Planar Passivated Metallurgically bonded Construction Moisture Sensitivity Level 1 |
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1N4151 1N4154 500mW DO-35 25oCUnless 1N4151 | |
1N4151Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N4151 Features • • • Low Current Leakage Compression Bond Construction Low Cost 500mW 75 Volt Silicon Epitaxial Diode Maximum Ratings |
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1N4151 500mW DO-35 1N4151 | |
1N4154Contextual Info: MCC TM Micro Commercial Components Features • • • • 1N4151 1N4154 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Planar Passivated Metallurgically bonded Construction Moisture Sensitivity Level 1 |
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1N4151 1N4154 500mW DO-35 1N4154 | |
1N4151Contextual Info: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1N4151 Features • • • Low Current Leakage Compression Bond Construction Low Cost 500mW 75 Volt Silicon Epitaxial Diode Maximum Ratings |
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1N4151 500mW DO-35 1N4151 | |
1n4154
Abstract: 1n4151
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1N4151 1N4154 500mW DO-35 1N4154 | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N4151 Features • • • • • • Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates Compliant. See ordering information) |
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1N4151 J-STD-020C 500mW DO-35 | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N4151 Features • • • • Low Current Leakage Compression Bond Construction Low Cost Marking : Cathode band and type number |
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1N4151 500mW DO-35 | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N4151 Features • • • • Low Current Leakage Compression Bond Construction Low Cost Marking : Cathode band and type number |
Original |
1N4151 500mW DO-35 | |