1N3887 Search Results

Contextual Info: 1N3887 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)40 @I(R) (A) (Test Condition)5.0 V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)12

1N3860

Abstract: 1N3861 12A-10F
Contextual Info: HIGH SPEED SWITCHING TYPES STUD BASE RECTIFIERS l0 RATINGS TO 30.0 AMPERES FEATURES: DESCRIPTION • Hermetic Seal • Metallurgical^ Bonded • High Temperature Operation These hermetically sealed rectifiers can be used in switching power supply and regulators. High speed and the availability of high voltage

tt 3043

Abstract: cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885
Contextual Info: MIL SPECS I C J Q C m a i H S OODBTOS 1 | MIL-S-19500/304B AMENDMENT 3 11 Auqust 1987 WOTSTDTfre-AMENDMENT 2 8 July 1985 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893,

CP CLARE hg 1004

Abstract: 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 November 1999. INCH-POUND MIL-PRF-19500/304D 15 August 1999 SUPERSEDING MIL-S-19500/304C 6 June 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY

vacuum tube 6z4

Abstract: 5Y4 tube 1N2637 1N4142 1N1238 17ax4 tube 6AX5 17AX4 1N2631 10s100
Contextual Info: INTEX/ SEMITRONICS CORP 27E D • HfltlSMb 0000302 ñ I semitron hot line t discrete devices o i-oi - TOLL FREE NUMBER 800-777-3960 r - 3 3-2 3 special package silicon rectifiers conrd stud mounted fast recovery silicorfrèctifiers C*M DO-27 case style Maxim um

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

1N2632

Abstract: D0-35 1n2631 1N2389 1k390 1n1239 1N3885 1N3886 1N3889 1N3890
Contextual Info: jo m itro n ic r semiconductors s j Semitronics Corp. special package silicon rectifiers special assemblies stud mounted fast recovery silicon rectifiers Maximum Average Maximum Average Forward Forward Reverse Maximum Current Voltage Current Peak Peak JUnps (v o lts)

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1N2637

Contextual Info: INTEX/ SEMITRONICS CORP 27E D • HfltlSMb 0 0 0 0 3 0 2 ñ I semitron hot line discrete devices t - oi-oi TOLL FREE NUMBER 800-777-3960 r - 3 3 - 2 3 special package silicon rectifiers conrd stud mounted fast recovery silico rfrè ctifie rs Maximum Average

1N3963C

Abstract: 1n3868 12A6F 1N3682 1N3956 1N3958C 1N3959 1N3959C 1N3913 JAN 1N3960C
Contextual Info: S E N I CO N C O M P O N E N T S INC ' ESE D • 0 1 3 5 1 5 7 OOODflMl M ■ HIGH SPEED STUD 1Q RATIN FEATURES: DESCRIPTION These hermetically sealed rectifiers can be used in switching power supply and regulators. High speed and the availability of high voltage